P2N2222A Amplifier Transistors

NPN Silicon
Features

These are PbFree Devices*

MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO92 CASE 29 STYLE 17

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COLLECTOR 1 2 BASE 3 EMITTER

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

3 STRAIGHT LEAD BULK PACK

12

3 BENT LEAD TAPE & REEL AMMO PACK

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

P2N2 222A AYWW G G

A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location)

ORDERING INFORMATION
Device P2N2222AG P2N2222ARL1G Package TO92 (PbFree) TO92 (PbFree) Shipping 5000 Units/Bulk 2000/Tape & Ammo

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: P2N2222A/D

January, 2013 Rev. 7

P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1) Collector Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT Cobo Cibo hie 300 2.0 0.25 50 75 5.0 25 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF pF kW hFE 35 50 75 35 100 50 40 0.6 300 0.3 1.0 1.2 2.0 V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 40 75 10 0.01 10 10 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit

6.0

IEBO ICEO IBEX

nAdc nAdc nAdc

10 20

VCE(sat)

Vdc

VBE(sat)

Vdc

hre

X 10 4

hfe

hoe

mMhos

rbCc NF

ps dB

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P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) td tr ts tf 10 25 225 60 ns ns ns ns Symbol Min Max Unit

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V +16 V 0 -2 V 1.0 to 100 ms, DUTY CYCLE 2.0% 1 kW 200 +16 V 0 < 2 ns CS* < 10 pF -14 V < 20 ns 1k 1N914 -4 V CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE 2.0% +30 V 200

Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. TurnOn Time

Figure 2. TurnOff Time

1000 700 500 hFE, DC CURRENT GAIN 300 200

TJ = 125C

25C 100 70 50 30 20 10 0.1 -55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k

Figure 3. DC Current Gain

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P2N2222A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8

0.6

IC = 1.0 mA

10 mA

150 mA

500 mA

0.4

0.2

0 0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3 0.5 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

10

20

30

50

Figure 4. Collector Saturation Region

200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0

500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 ts = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C

t, TIME (ns)

tf

Figure 5. Turn On Time

Figure 6. Turn Off Time

10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE

10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1.0 mA

6.0

6.0

4.0

4.0

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50 100

0 50

100 200

500

1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

Figure 8. Source Resistance Effects

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P2N2222A
30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 20 V TJ = 25C 300 200

100 70 50 1.0

2.0

3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 9. Capacitances

Figure 10. CurrentGain Bandwidth Product

1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS)

+0.5 0 -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 RqVB for VBE RqVC for VCE(sat)

0.2

0.1 0.2

50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)

500 1.0 k

0.1 0.2

0.5

1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)

500

Figure 11. On Voltages

Figure 12. Temperature Coefficients

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P2N2222A
PACKAGE DIMENSIONS
TO92 (TO226) CASE 2911 ISSUE AM
A R P L
SEATING PLANE

STRAIGHT LEAD BULK PACK

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---

X X H V
1

D G J C N N SECTION XX

DIM A B C D G H J K L N P R V

BENT LEAD TAPE & REEL AMMO PACK

P T
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

X X V
1

D J C N SECTION XX

DIM A B C D G J K N P R V

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P2N2222A/D

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