B. Tech.

(Fourth Semester Examination, 2001-2002)

(Electrical Engineering Material)

Q.1. (a) What is a covalent bond ? Give the structure of a crystal having this bond.
Distinguish between covalent and ionic bondings giving examples.
(b) With reference to crystals, state what you understand by the terms:
(i) crystal lattice, (ii) unit cell, (iii) basis and, (iv) atomic radius

(c) Explain the terms, coordination number and packing factor. Show that the
packing factor for:
π 2 π3
(i) FCC lattice is and , (ii) bcc lattice is
6 8
(d) Copper has FCC structure and its atomic radius is 1.278A0. Calculate the
density of copper crystal. Given Atomic weight of Copper = 63.5 and
Avogadro number = 6.023 x 1023.
(e) What are Miller Indices ? Explain step by step how the Miller indices are
used to determine crystal planes. Sketch the (1,1,2) plane in a simple cubic
cell.
(f) In reference to crystalline imperfections, explain the terms:
(i) point imperfections, (ii) line imperfections, and
(iii) surface imperfections.
ne 2τ
Q.2. (a) On the basis of electron theory, derive Ohm’s Law in the form σ =
m
where the symbols have their usual meaning.
(b) Explain how to select and Electrical Engineering material. Describe with
examples :-
(i) low resistivity materials and their applications, and
(ii) high resistivity materials and their applications.
(c) What is Hall effect ? How can the density of charge carriers in a
semiconductor be found from the measurement of Hall coefficient ?
(d) On the basis of band theory distinguish between extrinsic semiconductor
and intrinsic semiconductors. Why is intrinsic semiconductor not used in
semiconductor devices ?
(e) Explain Super conductivity. Distinguish between type I and type II super
conductors.
(f) The mobilities of silicon are μe = 0.17 m2/v-s and μh = 0.035 m2/v-s at room
temperature. If the carrier density in the materials in known to e 1.1 ×
1016/m3, calculate the resistivity of silicon.
Q.3. (a) Describe various mechanisms of dielectric polarization, What is electronic
polarizability? A simple parallel plate condenser is to be made to store 10
microcoulombs at a potential of 10 KV. The separation between the plates is
to be 4 × 10-4m. Calculate the area that the plates must have if the dielectric
material between the plates is of alumina of dielectric constant 10.
 (b) Derive an expression for internal field due to polarization in the case of
solids and liquids, and hence derive Clausius - Mosotti’s relation.
(c) Explain the terms.
(i) Dielectric loss (ii) Spontaneous polarization
(iii) Complex dielectric constant (iv) Piezoelectric effect
Q.4. (a) Distinguish between para, ferro, ferri and antiferromagnetic materials. Give
examples and comment on the statement that magnetism is a universal
property.
(b) Describe hysteresis loop and explain the terms, coercive force and
remanence. On the basis of the curve, distinguish between soft and hard
magnetic materials.
(c) Explain qualitatively the origin of ferromagnetism with particular reference
to Weiss theory. Show how the susceptibility of ferromagnetic materials
vary with temperature. What is Curie temperature?