RF and Microwave Circuit RF and Microwave Circuit

D i D i Design Design
Course code: ELE 552
Stepped impedance LPF Stepped impedance LPF Stepped impedance LPF Stepped impedance LPF
A relatively easy way to implement lowpass
filters in microstrip or stripline is to use p p
alternative sections of very high and very
low characteristics impedance.
S h fil f d d Such filters are referred as stepped-
impedance or hi-Z, low-Z filters.
Easy design procedures Easy design procedures
Occupy less space than open stub filters
Electrical performance is not good Electrical performance is not good
Suitable for applications where sharp cut-
off is not needed
LPF Contd.. LPF Contd..
Regardless of the construction of this two port
device we can model it as a simple T circuit device, we can model it as a simple T-circuit ,
consisting of three impedances as shown in figure.
LPF Contd.. LPF Contd.. LPF Contd.. LPF Contd..
For example, consider a length l of a
t i i li ( t i t t transmission line (a symmetric two-port
network ) whose ABCD parameters are given
by by
0
cos sin
i
l jZ l A B
jY l l C D
| |
| |
( (
=
( (
0
sin cos jY l l C D | |
( (

LPF LPF Contd Contd LPF LPF Contd Contd
By using conversion, Z parameters are
bt i d f ll obtained as follows
11 22 0
cot
A
Z Z jZ l | = = =
11 22 0
12 21 0
1
csc
j
C
Z Z jZ l
C
|
| = = =
By simple calculation we obtain
11 12 0
tan
2
l
Z Z jZ
|
| |
=
|
\ .
If is small and expressed in radians
2
|
\ .
l |
11 12 0
2
l
Z Z j Z
|
| |
~
|
\ .
2
|
\ .
0
12 21 0
csc
Z
Z Z jZ l
j l
|
|
= = ~
LPF LPF Contd Contd LPF LPF Contd Contd
Thus an electrically small transmission line
can be modeled as follows
Now, consider the case where the
characteristic impedance of the
transmission line is relatively large We transmission line is relatively large. We
denote this characteristic impedance as Z
h
LPF Contd.. LPF Contd.. LPF Contd.. LPF Contd..
Note the shunt impedance value. Since the Note the shunt impedance value. Since the
numerator (Z
h
) is relatively large, and the
denominator (l)is small, the impedance of
shunt device is very large.
So that we can approximate it as an open
circuit and now we have a further
simplification of our model as follows
h
jX jZ l j L | e = =
LPF Contd.. LPF Contd.. LPF Contd.. LPF Contd..
h h
jZ l j L Z l L | e | e = =
h
Z l
L
|
e
=
Now, consider the case where the
characteristic impedance of the
e
characteristic impedance of the
transmission line has a relatively low value,
denoted as Z
l
and the l is small, the series
impedance value is very small considered as
short circuit.
LPF Contd.. LPF Contd..
So we can simplify the model as follows
Z j
l
Z j
j
l C | e
=
1
l
Z l
j j C
|
e = =
l
j j C
l C Z
e
| e
= =
l
C
|
l
C
Z
|
e
=
LPF Contd.. LPF Contd.. LPF Contd.. LPF Contd..
So inductance and capacitance can be
realized using microstrip line using high realized using microstrip line using high
and low impedances.
From the above discussed results and From the above discussed results and
applying frequency and impedance scaling
the lengths of the inductor and capacitor
section can be calculated as below
L Z
Inductor
0
h
l
L Z
l
Z
C Z
l
|
|
=
Capacitor
0
l
C Z
l
Z
| =
Formulas for Formulas for Microstrip Microstrip
Effective dielectric constant
1 1 1
r r
c c
c
+
+
For a given characteristic impedance and
2 2
12
1
r r
eff
d
W
c = +
+
For a given characteristic impedance and
dielectric constant
for
2
8
2
A
A
e
e
W

/ 2 W d<
f
2
1 2 0.61
1 ln(2 1) ln( 1) 0.39
2
r
e
W
d
B B B
c


=
`
(

+ +
` (

)

/ 2 W d >
for 2
r r
t c c
(

)

)
/ 2 W d >
Formulas Contd.. Formulas Contd.. Formulas Contd.. Formulas Contd..
Where Where
0
1 1 0.11
0.23
60 2 1
r r
Z
A
c c
| |
+
= + +
|
\ .
60 2 1
377
r r
B
c c
t
|
+
\ .
=
0
2
r
Z c
Design a stepped impedance LPF having a Design a stepped impedance LPF having a
cut-off frequency of 2.5 GHz. It is
necessary to have more than 20 dB
insertion loss at 4 GHz. The filter
impedance is 50 ohm. The highest and
l t ti l i d 120 h lowest practical impedances are 120 ohm
and 20 ohm respectively. The substrate
used for fabrication is having thickness of used for fabrication is having thickness of
0.158mm and relative permittivity of 4.2
and loss tangent of 0.02 g