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: Examples
CST EM StudioTM
M-static
Rotary Encoder
LF
Eddy current sensor
J-static
Circuit Breaker
Tracking
Electron gun
TFD Lab.
TFD Lab.
Thin films and devices lab. for electronic displays and communications
http://tfd.hanyang.ac.kr
CST EM Studio
MAFIA
MAFIA (Maxwells Equations by the Finite Integration Algorithm)
MAFIA is an interactive program package for the computation of electromagnetic fields. It is based directly on the fundamental equations of electromagnetic fields, Maxwells equations. MAFIA is a modular program, it is divided in preprocessor, postprocessor and solvers for different special cases of Maxwells equations MAFIA includes an optimizer, it runs interactively as well as in batch or semi interactive using predefined command sequences. It has a powerful command language for automation and optimizing purposes and an advanced interactive graphical output with thousands of display options
CST MAFIA
MAFIA Module
MAFIA Module
CST MAFIA
MAFIA
The Following modules are available (I)
M : Preprocessor, includes solid modeler, CAD import, 3D graphics P : Postprocessor, includes 3D graphics and calculation of deduced quantities like far field and impedance S : Static field module, solves electrostatics, magnetostatics, heat flow problems, stationary current flow problems and electro-quasistatic problems T3 : Time domain module, simulates time dependent wave propagation, most general and versatile in application. Uses Cartesian coordinates TS3 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields. Uses Cartesian coordinates only TS2 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields in cylinder symmetrical structures
CST MAFIA
MAFIA
The Following modules are available (II)
E : Frequency domain eigenmode module, finds modes in resonators and waveguides W3 : Frequency domain module, covers the whole frequency range H3 : Thermodynamic module, solving thermodynamic problems in time domain in either Cartesian or polar coordinate system T2 : Time domain module, simulates time dependent wave propagation within cylinder symmetrical structures. Not yet available under GUI OO : Optimizer with many built in strategies. Optimizing capabilities not yet completely available under GUI A3 : Time domain acoustic solver. Not yet available under GUI
CST MAFIA
=0 t
E-static M-static J-static Tracking
a i t
Frequency Domain (j>0) Eigenvalue Problem (j=0) Implicit Explicit Time Domain PIC
0 t
EMS MAFIA
MWS
CST EM Studio
CST EM Studio
Example: E-static
S-static 1: Electrometer
Introduction
This Example deals with the simulation of a simple electrometer device, which can be used for voltage measurements. The model used for the electrometer consists of three parts: the electrometers scale, the ground, and the pointer. Results of interest: the capacitance and the torque for different angles of the pointer Pointer (PEC, 1,000V)
PEC
Scale (Dielectric, =10)
S-static 1: Electrometer
Summary
Mesh generation
S-static 1: Electrometer
Potential E-Field
CST EM Studio
S-static 1: Electrometer
Torque vs angle
CST EM Studio
S-static 2: RJ 45 Connector
Introduction
This example shows the calculation of the capacitance matrix of a RJ45 connection. The model consists of the connector and the corresponding socket, each containing eight wires for the signal transmission. The wires of the socket are fixed to a substrate plate, every other of them additionally connected to a metallic ground plane. This provides some kind of shielding effect for the transmission of the wire signals. Results of interest: capacitance Matrix
CST EM Studio
S-static 2: RJ 45 Connector
Define Potential
Potential 1 (PCB PEC, 0V) Potential 5 (PCB PEC, 1V) CST EM Studio
S-static 2: RJ 45 Connector
Potential E-Field
CST EM Studio
S-static 2: RJ 45 Connector
Capacitance Matrix
CST EM Studio
Parameter Sweep
CST EM Studio
CST EM Studio
Plate (PCB PEC, 1V) Floating Potential PEC High dielectric material (relative permittivity 10000) Applied charge value: 0C
CST EM Studio
1V
CST EM Studio
CST EM Studio
CST EM Studio
1V
CST EM Studio
CST EM Studio
Cathode (0V)
Isolated Electrode
Gate (30V)
Cathode (0V)
CNT
Isolated Electrode
Insulator, SiO2
Cathode (0V)
Inter-dielectric
68o 45o
90o
68o 45o
90o
S-static 7: ICP-Reactor
ICP Reactor
S-static 7: ICP-Reactor
Simulation of ICP Reactor under DC Bias Conditions
Modeling of ICP Reactor Simulation
System summary OS: MS Windows XP V.5.1 SP1 Model: Intel Zeon (SE7505VB2) 2 CPU Process: Genuine Intel ~2790Mhz Memory: 1,024.00MB Graphic Adapter: Quadro4 980XGL Simulation summary Tool: CST EM Studio TM v 1.3 (CST GmbH) Simulation field: Electrostatic Solver Number of nodes: 1,074,480 Mesh generation time: 130 s Solver time: 13 s
S-static 7: ICP-Reactor
Conditions Simulation Results Under 300 V Conditions
Potential distribution Electric Field distribution
S-static 7: ICP-Reactor
Conditions Simulation Results Under -450 V Conditions
Potential distribution Electric Field distribution
CST EM Studio
Example: M-static
CST EM Studio
CST EM Studio
CST EM Studio
CST EM Studio
B-Field (0o)
CST EM Studio
CST EM Studio
CST EM Studio
Loss Power (P): 6.856485e+001 [W] R = V2/P=0.1*0.1/P = 1.458473e-4 I = P/V = V/R = 685.65 [A]
CST EM Studio
CST EM Studio
CST EM Studio
CST EM Studio
CST EM Studio