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Outline
Intrinsic bond model : electrons and holes Generation and recombination Intrinsic semiconductor Doping: Extrinsic semiconductor Charge Neutrality
6.012 Lecture 2
IVA
6
VA
7
VIA
8
B
13
C
14
N
15
O
16
IIB
30
Al
31
Si
32
P
33
S
34
Zn Ga Ge As Se
48 49 50 51 52
Cd
In
Sn Sb Te
Other semiconductors:
Ge, C (diamond form) GaAs, InP, InGaAs, InGaAsP, ZnSe, CdTe (on the average, 4 valence electrons per atom)
6.012 Lecture 2
5.43 A 2.35A
6.012 Lecture 2
silicon ion (+ 4 q)
At 0K:
No free electrons
6.012 Lecture 2
At finite temperature
mobile electron
free holes
Mobile positive charge, +1.6 x 10-19 C Caution: picture is misleading! Electrons and holes in semiconductors are fuzzier: they span many atomic sites
6.012 Lecture 2 Electronic Devices and Circuits - S2005 5
A few definitions:
In 6.012, electron means free electron Not concerned with bonding electrons or core electrons Define: n (free) electron concentration [cm-3] p hole concentration [cm-3]
6.012 Lecture 2
RECOMBINATION=formation of covalent bond by bringing together electron and hole Releases energy in thermal or optical form Recombination rate: R = [cm 3 s1 ] 1 recombination event requires 1 electron + 1 hole R n p
Generation and recombination most likely at surfaces where periodic crystalline structure is broken
6.012 Lecture 2 Electronic Devices and Circuits - S2005 7
3. Intrinsic semiconductor
THERMAL EQUILIBRIUM Steady state + absence of external energy sources Generation rate in thermal equilibrium:
G o = f (T)
Recombination rate in thermal equilibrium: Ro no po In thermal equilibrium: Every process and its inverse must be EQUAL
Go (T ) = Ro no po = koGo (T ) no po = ni2 (T )
Only function of T
no = po = ni 1 10
ni is a very strong function of temperature
10
cm
T ni
6.012 Lecture 2 Electronic Devices and Circuits - S2005 8
4. Doping
Doping = engineered introduction of foreign atoms to modify semiconductor electrical properties A. DONORS: Introduce electrons to semiconductors (but not holes) For Si, group V elements with 5 valence electrons (As, P, Sb)
IIIA
5
IVA
6
VA
7
VIA
8
B
13
C
14
N
15
O
16
IIB
30
Al
31
Si
32
P
33
S
34
Zn Ga Ge As Se
48 49 50 51 52
Cd
6.012 Lecture 2
In
Sn Sb Te
9
As+
mobile electron
Define: Nd donor concentration [cm-3] If Nd << ni, doping is irrelevant Intrinsic semiconductorno=po=ni
Electronic Devices and Circuits - S2005 10
6.012 Lecture 2
Nd
Note: no >> po : n-type semiconductor Example: Nd=1017 cm-3 no=1017 cm-3 , po=103 cm-3 In general:
lg no lg po
no
ni
po
ni
intrinsic extrinsic
lg Nd
6.012 Lecture 2
Doping : Acceptors
A. ACCEPTORS: Introduce holes to semiconductors (but not electrons) For Si, group III elements with 3 valence electrons (B)
IIIA
5
IVA
6
VA
7
VIA
8
B
13
C
14
N
15
O
16
IIB
30
Al
31
Si
32
P
33
S
34
Zn Ga Ge As Se
48 49 50 51 52
Cd
In
Sn Sb Te
6.012 Lecture 2
12
po = Na
Note: po >> no : p-type semiconductor Example: Na=1017 cm-3 po=1017 cm-3 , no=103 cm-3 In general:
lg no lg po
n no = i Na
po
ni
no
ni
intrinsic extrinsic
lg Na
6.012 Lecture 2
5. Charge Neutrality
As+
mobile electron
The semiconductor remains charge neutral even when it has been doped
Overall charge neutrality must be satisfied
In general:
= q(po no + Nd Na )
Let us examine this for Nd = 1017 cm-3, Na = 0 We solved this in an earlier example:
n2 n o = Nd = 10 cm , p o = i = 103 cm 3 Nd
17 3
Hence:
0 !!
What is wrong??
Electronic Devices and Circuits - S2005 15
6.012 Lecture 2
po no + Nd = 0 n o po = n2 i
Solution and discussion tomorrow in recitation. Error in most practical circumstances too small to matter!
6.012 Lecture 2
16
Summary
Why are ICs made out of Silicon?
SILICON IS A SEMICONDUCTOR a very special class of materials
Two types of carriers (mobile charge particles): electrons and holes Carrier concentrations can be controlled over many orders of magnitude by addition of dopants selected foreign atoms Important Equations under Thermal Equilibrium conditions
Charge Neutrality Law of Mass Action
po no + N d Na = 0 no po = ni2
6.012 Lecture 2
17