US5L10

Transistors

General purpose transistor (isolated transistor and diode)

US5L10
A 2SD2674 and a RB461F are housed independently in a TUMT5 package.

zApplications DC / DC converter Motor driver

zDimensions (Unit : mm)

2.0

zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package

ROHM:TUMT5

Abbreviated symbol:L10

zStructure Silicon epitaxial planar transistor Schottky barrier diode

zEquivalent circuit
(5) (4)

Di2 Tr1

(1)

(2)

(3)

zPackaging specification s
Type Package Marking Code Basic ordering unit(pieces) US5L10 TUMT5 L10 TR 3000

Rev.B

0.2Max.

1.3

1/4

US5L10
Transistors
zAbsolute maximum ratings (Ta=25C) Tr1
Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 1.5 Collector current ICP 3 Power dissipation 0.9 Pc Junction temperature Tj 150 Range of storage temperature Tstg 40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
1 Single pulse, Pw=1ms. 2 Mounted on a 25mm25mm t 0.8mm ceramic substrate

Unit V V V A 1 A W/ELEMENT 2 C C

Di2
Parameter Symbol Average rectified forward current IF Forward current surge peak (60HZ, 1) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Peak reverse voltage VRM Power dissipation PD
Mounted on a 25mm25mm t 0.8mm ceramic substrate

Limits 700 3 20 125 40 to +125 25 0.5

Unit mA A V C C V W/ELEMENT

Tr1& Di2
Parameter Total power dissipation Symbol PD Limits 0.4 1.0 Unit W/TOTAL W/TOTAL
1 2

1 Each terminal mounted on a recommended land 2 Mounted on a 25mm25mm t 0.8mm ceramic substrate

zElectrical characteristics (Ta=25C) Tr1

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed

Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 15 12 6 270

Typ. Max. Unit 85 400 12 100 100 200 680 V V V nA nA mV pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V

Conditions

IC/IB=500mA/25mA VCE/IC=2V/200mA VCB=10V, IE=0A, f=1MHz

MHz VCE=2V, IE=200mA, f=100MHz

Di2
Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. Typ. 450 9 Max. 490 200 Unit mV A ns IF=700mA VR=20V IF=IR=100mA, Irr=0.1IR Conditions

Rev.B

2/4

US5L10
Transistors
zElectrical characteristic curves Tr1
BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000
Ta=100C

10
Ta=40C Ta=25C Ta=100C

20/1 IC/IB=20 Pulsed VBE(sat)

Ta=25C VCE=2V

DC CURRENT GAIN : hFE

Ta=25C

Ta=40C

0.1

100

0.1

Ta=100C Ta=25C Ta=40C

IC/IB=50/1

VCE(sat) 0.01

0.01

IC/IB=20/1 IC/IB=10/1

10 0.001

VCE=2V Pulsed

0.01

0.1

10

0.001 0.001

0.01

0.1

10

0.001 0.001

0.01

0.1

10

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain vs. collector current

Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current

Fig.3 Collector-emitter saturation voltage vs. collector current

10
COLLECTOR CURRENT : IC (A)

TRANSITION FREQUENCY : fT (MHz)

VCE=2V Pulsed

1000

1000

Ta=25C VCE=2V f=100MHz

tstg

SWITCHING TIME : (ns)

100

Ta=100C

0.1

Ta=25C

100

0.01

Ta=40C

10
tdon tf tr

0.001 0

0.5

1.0

1.5

10 0.001

VCE=2V Ta=25C Pulsed

0.01

0.1

10

1 0.01

0.1

10

BASE TO EMITTER VOLTAGE : VBE (V)

EMITTER CURRENT : IE (A)

COLLECTOR CURRENT : IC (A)

Fig.4 Grounded emitter propagation characteristics

Fig.5 Gain bandwidth product vs. emitter current

Fig.6 Switching time

EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

100
Cib

IE=0A f=1MHz Ta=25C

Cob

10

1 0.1

10

100

EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

Rev.B

3/4

US5L10
Transistors
Di2
10 1000m 100m 1
C

FORWARD CURRENT : IF (A)

REVERSE CURRENT : IR (A)

Ta=125C

10m 1m 100 10 1 0.1

Ta=25C

100m

=1 Ta

25

1m

0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V)

Ta =2 5

10m

Ta = 25 C

Ta=25C

10

20

30

40

50

60

70

REVERSE VOLTAGE : VR (V)

Fig.9 Forward characteristics

Fig.10 Reverse characteristics

Rev.B

4/4

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1