SMD Transistor (NPN) C945

SMD Transistor (NPN)

Features
NPN Silicon Epitaxial Planar Transistor Low Noise RoHS compliance

Mechanical Data
Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram

SOT-23

Maximum Ratings (T Ambient=25C unless noted otherwise)

Symbol Marking Code Description C945 CR 50 60 5.0 150 V V V mA Unit

VCEO VCBO VEBO IC

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Thermal Characteristics
Symbol Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25C Derate above 25C C945 200 1.6 625 -55 to +150 Unit mW mW/ C C/W C

Ptot RJA TJ, TSTG

Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range

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SMD Transistor (NPN) C945

Electrical Characteristics (T Ambient=25C unless noted otherwise)
Off Characteristics
C945 Symbol Description Min. Max. 100 100 V V V nA nA nA Unit Conditions

V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO

Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current

50 60 5.0 -

IC=1mA, IB=0 IC=100A, IE=0 IE=100A, IC=0 VCE=60V, IE=0 VCB=45V, IE=0 VEB=5V, IC=0

100

On Characteristics
C945 Symbol Description Min. Max. 400 0.3 1.4 V V MHz Unit Conditions

hFE VCE(sat) VBEF fT

D.C. Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequence

130 150

VCE=6V, IC=1mA IC=100mA, IB=10mA IE=310mA VCE=6V, IC=10mA, f=30MHz

Note: 1. FR-5=1.0x0.75x0.062 in. Classification of hFE

Rank Range L 130-200 H 200-400

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SMD Transistor (NPN) C945

Typical Characteristics Curves
Fig.1- Total Power Dissipation vs. Ambient Temperature PCM, Collector Power Dissipation (mW) Fig.2- Collector Current vs. Collector to Emitter Voltage

IC, Collector Current (mA)

TA, Ambient Temperature ( C)

VCE, Collector to Emitter Voltage (V)

Fig.3- Collector Current vs. Collector to Emitter Voltage

Fig.4- DC Current Gain vs. Collector Current

IC, Collector Current (mA)

VCE, Collector to Emitter Voltage (V)

hFE, DC Current Gain

IC, Collector Current (mA)

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SMD Transistor (NPN) C945

Fig.5- Collector and Base Saturation Voltage vs. Collector Current VBE(sat), Base Saturation Voltage (V) VCE(sat), Collector Saturation Voltage (V) Fig.6- DC Current Gain vs. Collector Current

hFE, DC Current Gain

IE, Emitter Current (mA)

IC, Collector Current (mA)

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SMD Transistor (NPN) C945

Dimensions in mm
SOT-23

How to contact us:

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