IXZR08N120 & IXZR08N120A/B

Z-MOS RF Power MOSFET

N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0

VDSS ID25 RDS(on) PDC

V V V V
S D D G S G = G S 0 = D 12 0A = 12 0B 12

= = =

1200 V 8.0 A 1.5 250 W

Maximum Ratings 1200 1200 20 30 8 40 8 TBD 5 >200 250

A A A mJ V/ns V/ns W W W C/W C/W

PDC PDHS PDAMB RthJC RthJHS

Tc = 25C, Derate 4.4W/C above 25C Tc = 25C

180 3.0 0.60 0.85

Features

min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C

typ.

max. V

Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature and power
cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials

1200 4 4.9 6 100 50 1 1.4 4 -55 175 -55 300 3.5 + 175 5.5 6.5 +175

V nA A mA S C C C C g

VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 20 V, ID = 0.5ID25, pulse test

Advantages

High Performance RF Z-MOSTM Optimized for RF and high speed

switching at frequencies to 100MHz

Common Source RF Package Easy to mountno insulators needed

IXZR08N120 & IXZR08N120A/B

Z-MOS RF Power MOSFET
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF=Is, VGS=0 V, Pulse test, t 300s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz

typ. 0.3 1900 86 11 33 4 5 4 6 39 11 19

max. pF pF pF pF ns ns ns ns nC nC nC

Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 8 48 1.5 200 A V ns

CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.

IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002

5,017,508 5,486,715 6,727,585

IXZR08N120 & IXZR08N120A/B

Z-MOS RF Power MOSFET
Fig. 1
Gate Charge vs. Gate-to-Source Voltage V D S = 600V, ID = 4A, IG = 3m A

Fig. 2
Typical Output Characteristics
15
7.5V 8V - 12V

16

Gate-to-Source Voltage (V)

14 12 10 8 6 4 2 0 0 20 40 60 80

ID , Drain Currnet (A)

10
7V

5
6.5V

0 0 10 20 30 40 50 60

Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 3
Typical Transfer Characteristics V DS = 60V, PW = 30uS 25

Fig. 4
Extended Typical Output Characteristics
25
Top 9V - 12V 8V 7.5V 7V 6.5V

ID , Drain Currnet (A)

ID , Drain Current (A)

20 15 10 5 0 5 6 7 8 9 10 11 12 V GS , Gate-to Source Voltage (V)

20
Bottom

15 10 5 0 0 10 20 30 40 50 60

VDS, Drain-to-Source Voltage (V)

Fig. 5
10000

V DS vs. Capactiance

Ciss
C a p a cita n ce (p F)
1000

100

Coss Crss

10

1 0 100 200 300 400 500 600 700 800 900 1000

VDS Voltage (V)

IXZR08N120 & IXZR08N120A/B

Z-MOS RF Power MOSFET
Fig. 6 Package Drawing

120: 1=G, 2=D, 3=S 120A: 1=G, 2=S, 3= D 120B: 1=D, 2=S, 3=G

Doc #dsIXZR08N120A/B REV 05/09 2009 IXYS RF

An

IXYS Company

2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com