2N4123

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2N4123

BE

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
30 40 5.0 200 -55 to +150

Units
V V V mA C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
2N4123 625 5.0 83.3 200

Units
mW mW/ C C/W C/W

2001 Fairchild Semiconductor Corporation

2N4123, Rev A

2N4123

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, I C = 0 30 40 5.0 50 50 V V V nA nA

ON CHARACTERISTICS*
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 50 mA I C = 50 mA, I B = 5.0 mA I C = 50 mA, I B = 5.0 mA 50 25 150 0.3 0.95 V V

SMALL SIGNAL CHARACTERISTICS

Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 100 kHz VEB = 0.5 V, f = 0.1 MHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 10 mA, VCE = 20 V, f = 100 MHz IC = 10 mA, VCE = 20 V f = 100 MHz VCE = 5.0 V, IC = 100 A, RS = 1.0 k , BW = 10 Hz to 15.7 kHz 50 2.5 250 6.0 4.0 8.0 200 pF pF

fT NF

Current Gain - Bandwidth Product Noise Figure

MHz dB

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2N4123

NPN General Purpose Amplifier

(continued)

Typical Characteristics

500 400
125 C

V CE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current

0.15 = 10
125 C

300
25 C

0.1
25 C

200 100 0 0.1

- 40 C

0.05
- 40 C

1 10 I C - COLLECTOR CURRENT (mA)

100

0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V - BASE-EMITTER ON VOLTAGE (V) BE(ON)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1
= 10

Base-Emitter ON Voltage vs Collector Current

1 VCE = 5V 0.8
- 40 C 25 C

0.8

- 40 C 25 C

0.6
125 C

0.6
125 C

0.4

0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

Collector-Cutoff Current vs Ambient Temperature

ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10

Capacitance vs Reverse Bias Voltage

f = 1.0 MHz

100 10 1 0.1

VCB = 30V

5 4 3 2
C obo C ibo

25

50 75 100 125 TA - AMBIENT TEMPERATURE ( C)

150

1 0.1

1 10 REVERSE BIAS VOLTAGE (V)

100

2N4123

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Noise Figure vs Frequency

12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 100 A, R S = 500

Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB)
I C = 1.0 mA

I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200

V CE = 5.0V 10

I C = 5.0 mA

8 6 4 2 0 0.1

I C = 50 A

I C = 100 A

1 10 f - FREQUENCY (kHz)

100

1 10 R S - SOURCE RESISTANCE ( k )

100

Current Gain and Phase Angle vs Frequency

50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)

Power Dissipation vs Ambient Temperature

0 20 40 60 80 100 120 140 160 180
1000
1

- CURRENT GAIN (dB)

SOT-223
0.75

- DEGREES

TO-92

0.5

SOT-23
0.25

V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)

fe

25

50 75 100 TEMPERATURE (o C)

125

150

Turn-On Time vs Collector Current

500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Ic 10

Rise Time vs Collector Current

500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 =
Ic 10

100
T J = 125C

T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

2N4123

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Storage Time vs Collector Current

500 t S - STORAGE TIME (ns)
T J = 25C

Fall Time vs Collector Current

500 I B1 = I B2 = t f - FALL TIME (ns)
T J = 125C Ic 10

I B1 = I B2 =

Ic 10

VCC = 40V

100
T J = 125C

100
T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

Current Gain
V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE ( mhos) 500 100

Output Admittance
V CE = 10 V f = 1.0 kHz T A = 25oC

h fe - CURRENT GAIN

100

10

10 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

h re - VOLTAGE FEEDBACK RATIO (x10

100 h ie - INPUT IMPEDANCE (k )

_4

Input Impedance
V CE = 10 V f = 1.0 kHz T A = 25oC

Voltage Feedback Ratio

10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC

10

0.1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

2N4123

NPN General Purpose Amplifier

(continued)

Test Circuits
3.0 V

300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K

275

C1 < 4.0 pF

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 < t1 < 500 s

t1 10.9 V 275

Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

TO-92 Tape and Reel Data

TO-92 Packaging Configuration: Figure 1.0

TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION LOT:

CBVK741B019

HTB:B QTY: 10000

See Fig 2.0 for various Reeling Styles

NSID:

PN2222N

SPEC:

D/C1:

D9842

SPEC REV: QA REV:

B2

FSCINT Label
(FSCINT)

5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box

F63TNR Label sample

LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F

Customized Label

(F63TNR)3

TO-92 TNR/AMMO PACKING INFROMATION

Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo Pack Options

Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units

FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box

Customized Label

(TO-92) BULK PACKING INFORMATION

EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX

BULK OPTION
See Bulk Packing Information table Anti-static Bubble Sheets

FSCINT Label

L34Z

NO LEADCLIP

2.0 K / BOX

2000 units per EO70 box for std option

114mm x 102mm x 51mm Immediate Box

5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label

FSCINT Label 10,000 units maximum per intermediate box for std option

2001 Fairchild Semiconductor Corporation

March 2001, Rev. B1

TO-92 Tape and Reel Data, continued

TO-92 Reeling Style Configuration: Figure 2.0

Machine Option A (H) Machine Option E (J)

Style A, D26Z, D70Z (s/h)

Style E, D27Z, D71Z (s/h)

TO-92 Radial Ammo Packaging Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE D74Z (M)

ORDER STYLE D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B

TO-92 Tape and Reel Data, continued

TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0

Hd P Pd

b Ha H1 HO d L L1 W1 S WO W2 W

t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max)

User Direction of Feed

TO-92 Reel Configuration: Figure 5.0

Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out

Note : All dimensions are in inches.

ELECT ROSTATIC SEN SITIVE D EVICES

D4

D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

F63TNR Label Customized Label

D2

Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches

D1 D2 D2 D3 D4 W1 W2 W3

13.975 1.160 0.650 3.100 2.700 0.370 1.630

14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090

W2

D3

July 1999, Rev. A

TO-92 Package Dimensions

TO-92 (FS PKG Code 92, 94, 96)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]

Part Weight per unit (gram): 0.1977

2000 Fairchild Semiconductor International

January 2000, Rev. B

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