NPN SILICON POWER TRANSISTOR TIP41C

65 W at 25C Case Temperature 6A Continuous Collector Current 10A Peak Collector Current 100V Collector-Emitter Voltage Isolated transistor package available on request Custom selections possible

Absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING Collector-Base Voltage (Ie=0) SYMBOL VCBO VALUE 140 UNIT V

Collector-Emitter Voltage (Ib=0)

VCEO

100

Emitter-base voltage (reverse) Continuous collector current Peak collector current (max 300s, duty cycle 2%) Continuous base current Continuous device dissipation at max 25C case temperature (see note 1) Continuous device dissipation at max 25C free air temperature (see note 2) Unclamped inductive load energy (see note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds

VEBO IC I CM IB P tot P tot LIC 2 Tj T stg TL

5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250

V A A A W W mJ C C C

NOTES
1. 2. 3. Derate linearly to 150C case temperature at t he rate of 0.52 W/C. This rating is not applicable to isolated packages. Derate linearly to 150C free air temperature at the rate of 16 mW/C This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=40mA, RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, I CC = 2.5A., duty max 1%.

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NPN SILICON POWER TRANSISTOR TIP41C

Electrical characteristics at 25C case temperature

PARAMETER

V(BR)CEO Collector-emitter ICES ICEO IEBO hFE VCE(sat) Vbe hfe

TEST CONDITIONS I C = 30 mA IB = 0 VBE = 0 IB = 0 IC = 0 IC = 300mA IC = 3A IC = 6A IC = 6A IC = 500mA

MIN
(see note 4) 100

TYP
120 0.03 0.03

MAX
400 700 1

UNIT
V A A mA

breakdown voltage VCE = 140V Collecor-emitter cut-off current VCE = 100V Collector cut-off current VEB = 5V Emitter cut-off current VCE = 4V Forward current VCE = 4V transfer ratio Collector-emitter I B = 600mA saturation voltage Vce = 4V Base-emitter voltage Small signal forward VCE = 10V current transfer ratio

(see notes 4 and 5) (see notes 4 and 5) (see notes 4 and 5) f = 1 kHz

30 15

100 60 1.2 1

1.5 2

V V

20

NOTES 4. Measured in pulse mode tp=300s, duty cycle <2% 5. To be measured using sense contacts for base and emitter.

Thermal characteristics
PARAMETER
RJC RJA Junction to case thermal resistance Junction to free air thermal resistance

MIN

TYP

MAX
1.92 62.5

UNIT
C/W C/W

Resistive-load-switching characteristics at 25C case temperature

PARAMETER
t on t off Turn-on time Turn-off time

TEST CONDITIONS
I C = 1A VBE(off) = -4 V IB(on) = 100mA RL = 20 ohm IB(off)= -100mA t P = 20 s

MIN

TYP
0.3 1

MAX

UNIT
s s

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