ME 598 - Advanced Micro and Nano Fabrication and Characterization ME 598 - Advanced Micro and Nano Fabrication and

Characterization
Lecture 1:
Overview of materials characterization:
the need for complementary techniques
Ivan Petrov
petrov@illinois.edu
1
January 18, 2011
Nanotechnology/Nanoscience
Nanotechnology is the study of manipulating matter on an atomic
and molecular scale.
Nanostructures - sizes 1 to 100 nanometer in at least one dimension.
Nanoscience the knowledge base of nanotechnology:
understanding, measuring, predicting, designing properties of
nanostructures nanostructures.
1 nm equals ~ 5 atomic diameters.
1 nm
3
contains ~ 125 atoms. 98 are surface
atoms and 27 are in the bulk.
Surfaces and quantum effect determine new q
properties.
DNA double-helix diameter ~ 2 nm
Iron on Copper (111)
2
Nano- Biotechnology converge
M.F. Crommie, C.P. Lutz, D.M. Eigler, E.J. Heller.
Waves on a metal surface and quantum corrals.
Surface Review and Letters 2 (1), 127-137 (1995).
Iron on Copper (111)
Nanotechnology
Two major approaches:
Bottom-up" approach: synthesis of molecules and structures
with controlled shape and functionality that self-assemble
Top-down" approach: nano-objects are constructed using
tools, for example lithography or scanning probe microscopy , p g p y g p py
3
This course
MRL I P t Ch t i ti t h i i l di l t MRL, Ivan Petrov Characterization techniques, including electron
microscopy, scanning probe microscopy (specifically AFM), spectroscopy,
FIB, X-ray diffraction. Fundamentals of thin film growth.
MNMS cleanroom, Bruce Flachsbart : This section will concentrate on
other aspects of processes, emerging process and recipe development
and documentation fabrication cost analysis etc and documentation, fabrication cost analysis, etc.
MNTL, Rashid Bashir and colleagues: The concentration here will be on
crystal growth, ALD, e-beam lithography, imprint lithography, and bioMEMS y g , , g p y, p g p y,
processing and technology.
4
Week 1
Tuesday January 18
th
12:30 to 1:50pm, Ivan Petrov Overview Nanocharacterization
Thursday, January 20
th
9 to 11:50am Ivan Petrov MRL tour
Thursday, January 20
th
12:30 to 1:50pm Scott MacLaren, Scanning probes
Week 2
Tuesday January 25
th
12:30 to 1:50pm Jim Mabon, Scanning Electron Miccroscopy/Focused
Ion Beam
Thursday, January 27
th
9 to 11:50am MacLaren AFM, Mabon SEM
Thursday, January 27
th
12:30 to 1:50pm Rick Haasch X-ray photoelectron and Auger electron
spectroscopy
Week 3
Tuesday, February 1
st
12:30 to 1:50pm, Tim Spila, Secondary ion mass spectrometry and
Rutherford backscattering spectroscopy
Thursday, February 3
rd
9 to 11:50am Haasch and Spila XPS SIMS
Thursday, February 3
rd
12:30 to 1:50pm Julio Soares Optical spectroscopies
Week 4
Tuesday, February 8
th
12:30 to 1:50pm Mauro Sardela X-ray diffraction
Thursday, February 10
th
9 to 11:50am Soares, Sardela
Thursday, February 10
th
12:30 to 1:50pm Ivan Petrov Thin Film Growth
Week 5
Tuesday, February 15
th
12:30 to 1:50pm Ivan Petrov Thin Film Growth
5
Thursday, February 17th 9 to 11:50am Bharat, Tao evaporation, sputtering
Thursday, February 17
th
12:30 to 1:50pm Jianguo Wen Transmission electron microscopy
Why materials analysis?
Material characterization at the atomic scale is Material characterization at the atomic scale is
needed:
In order to understand/control the synthesis processes y p
In order to understand why materials, micro-, and
nanosystems and devices work or fail
Understand
synthesis structure/composition properties relationship synthesis structure/composition properties relationship
6
Main questions to answer
1. What are the building blocks elemental and
chemical analysis chemical analysis
2. What is the arrangement of the building blocks
crystallographic analysis crystallographic analysis
3. What is the electronic structure
4. What are the surface morphology and bulk p gy
nanostructure imaging from micron to sub-
nanometer scale
7
Wide variety of methods for materials analysis
Ions Ions
Primary beam
(source, gun)
Secondary beam
(spectrometers, detectors)
Electrons
Photons
Electrons
Photons
* with ions and electrons: the sample is in vacuum
** exception: scanning probe microscopy
Wide variety of methods for materials analysis
9
http://www.eaglabs.com/
FSMRL Center for Microanalysis of Materials
C h i t f t h i f ti t t d d Comprehensive set of techniques from routine to most advanced
24 h access to qualified users
Staff 14 scientists and engineers for > 40 major instruments
5 S f A l i 1 T i i El t Mi 5. Surface Analysis
Cameca IMS 5f SIMS
PHI 660 Auger
PHI 5400 XPS
Small-spot imaging XPS
PHI TOF-SIMS(2003)
1. Transmission Electron Microscopy
Philips CM12
JEOL 2010 F STEM/TEM
JEOL 2011 TEM
IBM Low-Energy Electron Microscopy
JEOL 2100 Cryo (2006) ( )
Van de Graaff for ion beam analysis
6. Laser and Optical Spectroscopies
Raman spectroscopy/
Photoluminescence
Spectrophotometry/FTIR
y ( )
JEOL 2200FSTEM/STEM (2008)
2. Scanning Electron Microscopy
SEM/Focused ion-beam microscopy
Hitachi S-4700, SEM S-4800 (2008)
JEOL 6060 low-vacuum SEM(2004)
JEOL7000 l ti l SEM (2005)
p p y
Pump/probe spectroscopy
Sum frequency generation
Ellipsometry
Near-Field Scanning Optical Microscopy
Solar cell efficiency (2010)
Solar spectrum simulator (2010)
M l I t t Z t i (2010)
JEOL7000 analytical SEM (2005)
3. Scanning Probe Microscopy
Digital Instruments AFM
Advanced Asylum Research AFM (2) (2005)
Asylum Research Cypher (2010)
Omicron VT UHV STM
Malvern Instruments Zetasizer (2010)
Contact Angle Goniometers (2010)
Ultrafast Confocal microscope (2011)
MicroRaman (2011)
7. Property Measurement
Diff ti l l i t /Th l i (2009)
Omicron VT-UHV STM
4. X-ray Scattering
Philips X'pert: high-resolution, reciprocal maps
Philips X'pert: powder, pole figures
Rigaku D-Max: powder
High speed PIXcel line detector (2010)
10
Differential scan. calorimetry/Thermogr. analysis (2009)
Hysitron TI 950 Triboindenter (2010)
Hysitron Picoindenter (2010)
Quantum Design MPMS (2011)
Quantum Design PPMS (2011)
High-speed PIXcel line detector (2010)
Anton Paar DHS900 hot stage (2010)
Energy Dispersive X-Ray Fluorescence
A comprehensive characterization approach
interaction with ANL:
High-power lithium-ion battery failure mechanisms
000
6000
7000
8000
graphite
-(CF2-CH2)n-
-(CF2-CH2)n-
-(CH2)n-
-C-O-
-OCO2-
XPS, C1s spectrum
Positive electrode
50C, 60%SOC, 16 wk test
-C=O
Imaging
Spectroscopy (XPS)
Elemental analysis
Fresh
0.5 m
Aged
3000
4000
5000
6000
7000
8000
LiF
-(CF2-CH2)n-
XPS, F1s spectrum
50C, 60%SOC, 16 wk test
0
1000
2000
3000
4000
5000
282 283 284 285 286 287 288 289 290 291 292 293 294
Binding Energy, eV
-O-C=O
X ray
C Li
0.5 m 0
1000
2000
682 683 684 685 686 687 688 689 690 691 692
Binding energy, eV
0.00
0.01
0.02
Bulk
O K-edge
HRTEM, Crystallography, and EELS
(104)
(003)

X-ray
structure
refinement
Ni
All
530 535 540 545 550 555 560 565 570 575 580 585 590 eV
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
m
0.00
0.02
Bulk
Ni L-edge
Particle Surface
(006)
(113)
(110)
(018)
(107) (015)
(104)
(012)
(101)
C(002)

I
n
t
e
n
s
i
t
y

(
a
.
u
.
)
11
20 nm
850 860 870 880 890 900 910 eV
0.04
0.06
0.08
0.10
m
2-theta (
o
)
8 monolayers AuPd
40 monolayers AuPd
8 monolayers AuPd
40 monolayers AuPd
8 ML
40 ML
2 nm
Wide variety of methods for materials analysis
Ions Ions
Primary beam
(source, gun)
Secondary beam
(spectrometers, detectors)
Electrons
Photons
Electrons
Photons
* with ions and electrons: the sample is in vacuum
** exception: scanning probe microscopy
Scattering cross section one target atom
n
beam
[beam particles cm
-
3
]
Beam Flux: J
beam
= n
beam
v[beam particles cm
-2
s
-1
]
v beam particle velocity
vt
= r
2
V = vt V = vt
N
events
= n
beam
V = n
beam
vt = J
beam
t
18
= N
events_per-seccond
/J
beam
Scattering cross section many target atoms
N
events-per-second
= J
beam
N
target
=
N
events-per-second
J
beam
N
target
19
Scattering cross section binary target
Detector
I
green
= T
instr
*N
events-per-second
= J
beam
T
instr

gr
N
gr
gr gr
i t
*
i t
20
I
orange
= T
instr
*N
events-per-second
= J
beam
T
instr

or
N
or
or or
Mean free path
= r
2
vt
V = vt
N
events
= n
target
V = n
target
vt N
events
n
target
V n
target
vt
Mean free path
Traveled distance vt
Mean free path =
Number of events
=
n
target
vt
21
= 1/ n
target
(cm/events)
Scattering cross-section -
probability that a scattering process occurs
= N/J n (e ents/beam particle/(atom/cm
2
)) = N/J
beam
n
target
(events/beam particle/(atom/cm
2
))
N number of events of certain type per sec (elastic, inner shell ionization, etc)
J particle beam flux (particles/sec/cm
2
) J
beam
particle beam flux (particles/sec/cm
2
)
n
target
target atom density (atoms/cm
3
)
mean free path
= 1/ n
target
(cm/events)
target
If several different scattering processes can occur (
i
)
1/ = (1/)
22
1/
total
= (1/
i
)
X-ray scattering
X-ray/Matter Interactions
Coherent
scattering
hv
0
hv
0
hv
Fluorescence
Incoherent
scattering
Incident x-ray photons
XRD
XRF
hv
1
hv
2
Photoelectron
Auger electron
e
-
e
-
5
Interaction
XPS
Coherent scattering (Thompson scattering / diffraction):
50 m 5 cm
5 m
Sample
Interaction
volume
hv: photon
e
-
: electron
incident photon hv
o
interacts with e
-
with no energy loss and no phase change
Incoherent scattering (Compton scattering): (a) e
-
absorbes incident energy hv
o
(excited photoelectron);
(b) part of the energy is emitted at different energy hv
1
and different phase.
Fluorescence (Characteristic x-rays): (a) K/L shell e
-
absorb incident energy hv ; (b) outer shell e- Fluorescence (Characteristic x rays): (a) K/L shell e absorb incident energy hv
o
; (b) outer shell e
cascade down filling the holes causing secondary photons emission (hv
2
).
Photoelectron emission:
hv
0
energy is used to eject electron e
-
with kinetic energy = hv
o
B.E.(binding energy).
23
Auger electron emission:
(a) incident hv
0
used to eject e
-
from atom; (b) 2
nd
e
-
falls to lower levels to fill the holeand a photon is
emitted; (c) the emitted photon is absorbed by valance e
-
, which ionizes and leaves the atom.
Electron-Beam/Matter Interactions
Incident
Beam
UV/Visible/IR
Light
EDS/WDS EDS/WDS
CL CL
Backscattered
electrons (BSE)
Secondary
electrons (SE)
Characteristic
X-rays
Bremsstrahlung
Auger
electrons
Imaging Imaging
( )
electrons (SE)
Bremsstrahlung
X-rays
Elastic Scattering
Heat
Inelastic Scattering
Micron-size Interaction Volume
Specimen Current
Imaging Imaging
I
s c
24
I
s c
= I
b
qI
b
oI
b
= I
b
(
1
(
q+o
))
Ion-Beam/Matter Interactions
Inelastic Effects
Ion beam with an energy
E
i
+
I
Elastic Effects
SIMS
depth profile
UV/visible photons
Sputtered Particles
T
0
, T
*
, T
n T
+
, I
+
T
-
, I
-
(+)(-) Ions (AES,XPS)
X-rays
Secondary
Electrons
Reflected Particles, I
0
,I
*
RBS,ERD
Implanted Particles
I
0
Target
I
0
25
Figure after G.M. McCracken, Rep. Prog Phys. 28, 241 (1975).
Beam particles properties
0.0122
26
Main questions to answer
1 Wh t th b ildi bl k l t l d h i l 1. What are the building blocks elemental and chemical
analysis
2. What is the arrangement of the building blocks 2. What is the arrangement of the building blocks
crystallographic analysis
3. What is the electronic structure
4. What are the surface morphology and bulk nanostructure
imaging from micron to sub-nanometer scale
using
elastic (coherent) electron and x-ray scattering
diffraction analysis (reciprocal space mapping)
27
Coherent diffraction by a crystal
plane normal
1 1
K
Plane wave
(x-ray or electron)
u
2 2
K
i
K
d
( y )
=
o
e
2x/

2Kx
dsinu
A
B
d
K
i
K
=
o
e
2Kx
2d u B L
by definition wave vector |K
i d
| = 1/
dsinu
C
2 n dsin = u Braggs Law:
y |
i,d
|
scattering vector: |K|/2 = |K
d
| sin
28
|K|= 2sin/ = 1/d
Fundaments of diffraction
Real space
Reciprocal space
F
d
1/d
origin
29
Fundaments of diffraction
Real space
Reciprocal space
F
origin
30
Real and reciprocal space
001 zone axis 011 zone axis 111 zone axis
31
Real and reciprocal space in TEM
TEM
Sample
Incident Electrons
< 500 nm
Sample
Objective Lens
d
j
Back Focal Plane
First Image Plane
Reciprocal space image
u
Real space image
Braggs Law
2 d sin u = n
|K|= 2sin/ = 1/d
32
JG WEN
Main questions to answer
1 Wh t th b ildi bl k l t l d 1. What are the building blocks elemental and
chemical analysis
2. What is the arrangement of the building blocks 2. What is the arrangement of the building blocks
crystallographic analysis
3. What is the electronic structure
4. What are the surface morphology and bulk nanostructure
imaging from micron to sub-nanometer scale
using
inelastic electron and x-ray scattering
(ionization and relaxation processes)
33
Inelastic scattering of x-rays and electrons
Ionization XPS and EELS
Relaxation Auger electron spectroscopy and characteristic x-rays (EDS, WDS, XRF)
34
Elemental analysis by inelastic processes
60
photoelectrons characteristic x-rays Auger electrons
40
50
3s
3p 3d 4s 4p
30
A
t
o
m
i
c
N
u
m
b
e
r
2s
2p
10
20
1s
0
0 200 400 600 800 1000 1200 1400
Binding Energy (eV)
35
Ionization
Ph t l t S t
BE = hv (known) KE(measured) BE = E
o
(measured) E
loss
(measured)
Photoelectron Spectroscopy
Electron Energy-Loss Spectroscopy
Free Electron Level
E
incident X-ray
= hv
E
incident electron
= E
o
Spectrometer, KE
Conduction Band Conduction Band
Fermi
L l
Free Electron Level
u
Conduction Band Conduction Band
u
Valence Band
Level
2p
BE
Valence Band
2p
BE
1s
2s
BE
1s
2s
36
1s
1s
Spectrometer, E
o,
E
loss
Elemental Shifts: An Example
Fi t R T iti M t l Nit id S N TiN VN d C N
Metal and N Auger Lines
N1s
Sc2p
Sc2s
First-Row Transition Metal Nitrides: ScN, TiN, VN, and CrN
ScN
n
i
t
s
)
N1s
Ti2p
Ti2s
Sc3p
Sc3s
TiN

s

(
a
r
b
.

u
n
N1s
N1s
V2p
V2s
Ti3s
Ti3p
V3
VN
C
o
u
n
t
s
N1
Cr2p
Cr2s
V3s
V3p
C 3
1200 1000 800 600 400 200 0
CrN
N1s
Cr2s
Cr3s
Cr3p
37
1200 1000 800 600 400 200 0
Binding energy (eV)
Surface Science Spectra, 7, 167-280, 2000.
Relaxation
F El t L l
Incident particle Ejected Electron
Emitted Auger Electron
Emitted X-ray Photon ionization
Conduction Band Conduction Band
Fermi
Conduction Band
Free Electron Level
Valence Band
Level
2p
Valence Band
L L
2s
2p L
2
,L
3
L
1
1s K
KLL Auger electron
E = E(K) E(L ) E(L )
38
E
Auger
= E(K)- E(L
2,3
) - E(L
2,3
)
E
X-ray
= E(K) E(L
2,3
)
Scanning transmission
Elemental analysis by electron microscopy
STEM
1
O
primary e-beam
0.5-30 keV
Scanning electron microscopy (SEM)
primary e-beam
100-300 keV
Scanning transmission
electron microscopy (STEM)
0.5 30 keV
backscattered
electrons
characteristic &
characteristic &
Bremsstrahlung elect o s
secondary
electrons
<50 eV
Auger
electrons
characteristic &
Bremsstrahlung
x-rays
Bremsstrahlung
x-rays
Probe size
<50 eV
Probe size
0.18 nm
Thickness
<100 nm
Coherent Incoherent
39
1 m
Scattering
(i.e. Interference)
Scattering
i.e.
Rutherford
energy loss spectroscopy
Main questions to answer
1 Wh t th b ildi bl k l t l d 1. What are the building blocks elemental and
chemical analysis
2. What is the electronic structure 2. What is the electronic structure
3. What is the arrangement of the building blocks
crystallographic analysis
4. What are the surface morphology and bulk nanostructure
imaging from micron to sub-nanometer scale
using ion-beam techniques
Secondary ion mass spectrometry y p y
(highest detection limit)
Rutherford backscattering spectrometry
(quantitative)
40
(q )
Ion impact collision cascade
Energy increasing (dependent on M
i
/M
t
)
Threshold regime
Linear cascade
Spike regime
f
Ions striking a surface interact with a number of atoms in a series collisions;
recoils sputtered, but
no (limited) cascades
a series of binary collisions
high density of recoils
Ions striking a surface interact with a number of atoms in a series collisions;
recoiled target atoms in turn collide with atom at rest generating a collision cascade.
The initial ion energy and momentum are distributed to among the target recoil atoms.
When E
i
> 1 keV, the cascade is linear, i.e. approximated by a series of binary collisions
in a stationary matrix
41
P.Sigmund, Sputtering by ion bombardment: theoretical concepts, in Sputtering by particle bombardment I, edited by R. Behrish, Springer-Verlag, 1981
in a stationary matrix.
Ion impact collision cascade
Energy increasing (dependent on M
i
/M
t
)
Threshold regime
Linear cascade
Spike regime
f
Ions striking a surface interact with a number of atoms in a series collisions;
recoils sputtered, but
no (limited) cascades
a series of binary collisions
high density of recoils
Ions striking a surface interact with a number of atoms in a series collisions;
recoiled target atoms in turn collide with atom at rest generating a collision cascade.
The initial ion energy and momentum are distributed to among the target recoil atoms.
When E
i
> 1 keV, the cascade is linear, i.e. approximated by a series of binary collisions
in a stationary matrix
42
P.Sigmund, Sputtering by ion bombardment: theoretical concepts, in Sputtering by particle bombardment I, edited by R. Behrish, Springer-Verlag, 1981
in a stationary matrix.
Ion stopping cross section
| |
( ) ( ) ) (
e n
S E
dE
N N S S E E
dx
= = +
0
'
( ')
E
dE
Range
NS E
=
}
S
n
(E) - nuclear stopping; target atoms set in motion
S
e
(E) - electronic stopping; electrons set in motion
E
/
d
x
)
S
e
(E)
s

p
e
r

c
m

l
o
g
(
d
E
S
n
(E)
1-2 keV
e
n
e
r
g
y

l
o
s
1-2 MeV
(log E)
43
P.Sigmund, Sputtering by ion bombardment: theoretical concepts, in Sputtering by particle bombardment I, edited by R. Behrish, Springer-Verlag, 1981
1 2 keV 1 2 MeV
Main questions to answer
1 Wh t th b ildi bl k l t l d h i l 1. What are the building blocks elemental and chemical
analysis
2. What is the electronic structure 2. What is the electronic structure
3. What is the arrangement of the building blocks
crystallographic analysis
4. What are the surface morphology and bulk
nanostructure imaging from micron to sub-nanometer
scale scale
using
Scanning probe microscopy
44
Scanning electron microscopy
Atomic force microscopy
Split photodetector
Reflect laser off cantilever in split photodetector
Magnifies small displacements both vertical and twisting
45
V.L. Mironov, Fundamental of scanning probe microscopy, (Russian Academy of Sciences, Nizhny Novgorod, 2004) http://www.ntmdt.ru
AFM: Surface morphology evolution during Ge MBE
46
Quantitative information of height allows histograms of slopes
Imaging with secondary electrons
Reveals surface morphology with exceptional depth of focus
Reactive ion etching of Al/Si(001)
47
Reactive ion etching of Al/Si(001)
Imaging spheres
AFM SEM
48
Main questions to answer
1. What are the building blocks elemental and chemical
analysis analysis
2. What is the electronic structure
3. What is the arrangement of the building blocks
crystallographic analysis
4. What are the surface morphology and bulk nanostructure
imaging from micron to sub nanometer scale imaging from micron to sub-nanometer scale
with sub-nanometer resolution
Transmission electron microscopy
49
Analytical (Scanning ) Transmission Electron Microscopy (S)TEM
primary e-beam
100-300 keV
Coherent
Scattering
(i.e. Interference)
characteristic &
Bremsstrahlung
Incoherent
Bremsstrahlung
x-rays
Probe size
Scattering
i.e. Rutherford
Probe size
0.18 nm
Thickness
<100 nm
Coherent Incoherent
50
Scattering
(i.e. Interference)
Scattering
i.e.
Rutherford
Example: Epitaxial CoSi
2
/Si(001)
[110] XTEM & [001] plan [110] XTEM & [001] plan- -view TEM view TEM
High High- -resolution [110] XTEM resolution [110] XTEM
c
d
glue
ZZ- -contrast HR contrast HR--STEM & EELS STEM & EELS
b
a
CoSi
2
Si
a
r
b
.

u
n
i
t
s
)


a
r
b
.

u
n
i
t
s
)


5 nm
c
d
O K-edge
500 600 700 800
I
n
t
e
n
s
i
t
y

(
a





500 600 700 800
I
n
t
e
n
s
i
t
y

(
a





a
b
c
Co L -edge
2
Co L -edge
3
500 600 700 800
Energy loss (eV)
500 600 700 800
Energy loss (eV)
Lim, Greene, Petrov, JAP, 100, 013510, (2006)
Materials characterization: the need for complementary techniques
Typical sequence to study a set of samples: Typical sequence to study a set of samples:
1/ non-destructive analysis with no sample preparation to map out phase
composition (XRD), surface morphology (AFM, SEM), elemental
composition (RBS, EDS)
2/ measure physical properties - electrical, mechanical, optical etc.
3/ analysis selected samples by surface analysis (e.g. AES, XPS) depth
profiling, cross-sectional SEM
4/ Select key samples for plan-view and cross-section TEM to understand
critical behavior physical properties
52
Manipulating [AlN] in Hf
1-x
Al
x
N using E
i
Ei = 80eV
Ei = 70eV Ei = 70eV
Ei = 60eV
E
i
= 50eV
E
i
= 40eV
E
i
= 30eV
E
i
= 20eV
E
i
= 10eV
MgO(001) MgO(001)
Brandon Howe
Manipulating [AlN] in Hf
1-x
Al
x
N using E
i
002 022
020 020
002 022 002 022
020
Z-contrast
Brandon Howe
Hf
0.70
Al
0.30
N/HfN Superlattices by E
i
modulation
002 022
020
A = 3.4 nm
020
A = 3.4 nm
50nm Hf
0.7
Al
0.3
N buffer layer (E
i
=10eV)
120 bil 3 @ E 10 V 4 @ E 40 V 120 bilayers; 3sec @ E
i
=10eV, 4sec @ E
i
=40eV
A = 3.4 nm
Brandon Howe
Hf
0.70
Al
0.30
N/HfN Superlattices by E
i
modulation
= 1 nm
= 3 nm
= 2 nm
5
= 4 nm
= 6 nm
= 5 nm
Hysitron TI 950 Triboindenter
[0 0 2] map
Brandon Howe
y
FSMRL Center for Microanalysis of Materials
C h i t f t h i f ti t t d d Comprehensive set of techniques from routine to most advanced
24 h access to qualified users
Staff 14 scientists and engineers for > 40 major instruments
5 S f A l i 1 T i i El t Mi 5. Surface Analysis
Cameca IMS 5f SIMS
PHI 660 Auger
PHI 5400 XPS
Small-spot imaging XPS
PHI TOF-SIMS(2003)
1. Transmission Electron Microscopy
Philips CM12
JEOL 2010 F STEM/TEM
JEOL 2011 TEM
IBM Low-Energy Electron Microscopy
JEOL 2100 Cryo (2006) ( )
Van de Graaff for ion beam analysis
6. Laser and Optical Spectroscopies
Raman spectroscopy/
Photoluminescence
Spectrophotometry/FTIR
y ( )
JEOL 2200FSTEM/STEM (2008)
2. Scanning Electron Microscopy
SEM/Focused ion-beam microscopy
Hitachi S-4700, SEM S-4800 (2008)
JEOL 6060 low-vacuum SEM(2004)
JEOL7000 l ti l SEM (2005)
p p y
Pump/probe spectroscopy
Sum frequency generation
Ellipsometry
Near-Field Scanning Optical Microscopy
Solar cell efficiency (2010)
Solar spectrum simulator (2010)
M l I t t Z t i (2010)
JEOL7000 analytical SEM (2005)
3. Scanning Probe Microscopy
Digital Instruments AFM
Advanced Asylum Research AFM (2) (2005)
Asylum Research Cypher (2010)
Omicron VT UHV STM
Malvern Instruments Zetasizer (2010)
Contact Angle Goniometers (2010)
Ultrafast Confocal microscope (2011)
MicroRaman (2011)
7. Property Measurement
Diff ti l l i t /Th l i (2009)
Omicron VT-UHV STM
4. X-ray Scattering
Philips X'pert: high-resolution, reciprocal maps
Philips X'pert: powder, pole figures
Rigaku D-Max: powder
High speed PIXcel line detector (2010)
57
Differential scan. calorimetry/Thermogr. analysis (2009)
Hysitron TI 950 Triboindenter (2010)
Hysitron Picoindenter (2010)
Quantum Design MPMS (2011)
Quantum Design PPMS (2011)
High-speed PIXcel line detector (2010)
Anton Paar DHS900 hot stage (2010)
Energy Dispersive X-Ray Fluorescence