KSE800/801/802/803

KSE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature : KSE800/801 : KSE802/803 : KSE800/801 : KSE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W C C
R1 R2 E B Equivalent Circuit C

R 1 10 k R 2 0.6 k

Electrical Characteristics TC=25C unless otherwise noted

Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cut-off Current : KSE800/801 : KSE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min. 60 80 100 100 100 500 2 750 750 100 2.5 2.8 3 2.5 2.5 3 V V V V V V Max. Units V V A A A A mA

ICEO

VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A

ICBO

IEBO hFE

Emitter Cut-off Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES

VCE(sat)

Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter ON Voltage : KSE800/802 : KSE801/803 : ALL DEVICES

VBE(on)

2001 Fairchild Semiconductor Corporation

Rev. A3, June 2001

KSE800/801/802/803

Typical Characteristics

10000

A IB= 500

VCE = 3V

IC(A),COLLECTOR CURRENT

IB= 350 A
3

hFE, DC CURRENT GAIN

5

IB= 450A IB= 400 A

IB= 300A IB= 250A IB= 200A

1000

IB= 150 A IB= 100A

100

IB= 50A

0 0 1 2 3 4

10 0.01

0.1

10

V CE(V),COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100

1000

IC = 500 IB

f=0.1MHZ IE=0

Cob[pF], CAPACITANCE

10

100

VBE(sat)
1

10

VCE(sat)

0.1 0.01

0.1

10

1 0.01

0.1

10

100

IC[A], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

100

60

50

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

1000

10

40

10 0 s 1m s 5m s D .C .

30

20

KSE800/801 KSE802/803
0.1 1 10 100

10

0 0 25 50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A3, June 2001

KSE800/801/802/803

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A3, June 2001

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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3