First Course on

Chapter 2

Power Electronics

Reference Textbook: First Course on Power Electronics by Ned Mohan, www.mnpere.com

Copyright Ned Mohan 2008

Chapter 2 2-1 2-2 2-3 2-4 2-5 2-6 2-7

Design of Switching Power-Pole

Power Transistors and Power Diodes Selection of Power Transistors Selection of Power Diodes Switching Characteristics and Power Losses in Power-Poles Justifying Switches and Diodes as Ideal

Design Considerations The PWM Controller IC References Problems Appendix 2A Diode Reverse-Recovery and Power Losses

Copyright Ned Mohan 2008

POWER TRANSISTORS AND POWER DIODES Voltage Rating Current Rating Switching Speeds On-State Voltage

Copyright Ned Mohan 2008

SELECTION OF POWER TRANSISTORS

Thyristor

10 8 Power (VA) 10 6 10 4 10 2

IGCT IGBT

Thyristor

IGCT (a)

IGBT

MOSFET

MOSFET

10 1 10 2 10 3 10 4 Switching Frequency (Hz)

(b)

MOSFETs Figure 15-1 Power semiconductor devices. IGBTs IGCTs GTOs Niche devices: BJTs, SITs, MCTs
Copyright Ned Mohan 2008

MOSFETs
D

iD
+
VDS D iD

iD

RDS ( on ) = 1/slope
VGS = 11V
iD
RDS (on ) = 1/slope

iD
Io

+ VGSG

+ VDS

9V 7V VGS = 11V 5V 9V VGS 7 V VGS (th )

VGS 5V V VGS (thDS )

iD Io

(a)

+ VGS

0
0

0
0

VGS (th ) VGS ( I o )

(b)
(b)

VDS

VGS (th ) VGS ( I o )(c)

VGS

(a)

(c)

VGS

Figure 2-1 MOSFET: (a) symbol, (b) i-v characteristics, (c) transfer characteristic.

2.5 to 2.7 RDS ( on ) VDSS

Copyright Ned Mohan 2008

IGBTs
C
iC + iC VGE
+ VGE E

VCE

VCE

(a)

(b)

Figure 2-2 IGBT: (a) symbol, (b) i-v characteristics.

Copyright Ned Mohan 2008

Power Semiconductor Price Trends

USD/A

0.7
Pricing (USD/A) 1200 V IGBTs

0.6 0.5 0.4 0.3 0.2 0.1 0

1990 1995 2000 2005

Copyright Ned Mohan 2008

SELECTION OF POWER DIODES

iAK

0
(a) (b)

v AK

Figure 2-3 Diode: (a) symbol, (b) i-v characteristic.

Line-frequency diodes Fast-recovery diodes Schottky diodes SiC Schottky diodes

Copyright Ned Mohan 2008

SWITCHING CHARACTERISTICS AND POWER LOSSES IN POWER-POLES

iD + Vin VGG
RGG

iD Io Io 0 on

+ vDS

off
(b) Vin vDS

(a)

Figure 2-4 MOSFET in a switching power-pole.

Copyright Ned Mohan 2008

Turn-on Characteristic
vGS

iD
D

+
0

vDS
S

iD Io on B A Io 0 off Vin (b) vDS

vGS ( Io ) vGS (th )

0

vGG

vGG

Vin

Vin iD
0 td ( on ) tri

vDS Io
t fv t

(a)

(c)

Figure 2-5 MOSFET turn-on.

Copyright Ned Mohan 2008

10

Example 2-1

In the converter of Fig. 2-4a, the transistor is a MOSFET which carries a current of 5 A when it is fully on. If the current through the transistor is to be limited to 40 A during a malfunction in which case the entire input voltage of 50 V appears across the transistor, what should be the maximum on-state gate voltage that the gate-drive circuit should provide? Assume the junction temperature T j of the MOSFET to be 1750 C .

Solution

The transfer characteristic of this MOSFET is shown in Fig. 2-6. It shows that

100 A 40 A 10 A
ID

1A
VGS 0.1 A 4.0 5.0 6.0 7.0 8.0 9.010.0 7.5V

if VGS = 7.5V is used, the current through the MOSFET will be limited to 40 A. Figure 2-6 MOSFET transfer characteristic. Copyright Ned Mohan 2008

11

Turn-off Characteristic

vGG iD vGG
+ Vin
0 G
D

vDS
S

iD Io on C D Io 0 (b)

vGS ( Io ) vGS (th )

0

vGS

Io
0 td ( off )

Vin vDS
t rv

off Vin vDS

iD
t fi t

(a)

(c)

Figure 2-7 MOSFET turn-off.

Copyright Ned Mohan 2008

12

PSpice Modeling: Power_pole_PSpice_Diode.sch

Copyright Ned Mohan 2008

13

Simulation Results: MOSFET Voltage and Current

50

40

30

vDS
20

iD
10 0

-10 0s V(M2:d,M2:s)

0.2us -I(V2)

0.4us

0.6us

0.8us Time

1.0us

1.2us

1.4us

1.6us

Copyright Ned Mohan 2008

14

Calculating Power Losses Within the MOSFET (assuming an ideal diode) Conduction Loss: Switching Losses:
Vin vDS Io

Pcond = d RDS ( on ) I o2

1 Psw = Vin I o (tc , on + tc , off ) f s 2

vDS Vin

tc , on = tri + t fv tc , off = trv + t fi

iD
0

iD
t fv tc , on

tri

trv
tc , off

t fi

psw
0 tc , on

Vin I o

psw

Vin I o
tc , off

Copyright Ned Mohan 2008

Figure 2-8 MOSFET switching losses.

15

Gate Driver Integrated Circuits (ICs) with Builtin Fault Protection

VCC vc

Vext = 12 V

Figure 2-9 Gate-driver IC functional diagram.

Copyright Ned Mohan 2008

16

JUSTIFYING SWITCHES AND DIODES AS IDEAL Very High Converter Efficiencies Low on-state voltage drops across devices Low switching losses

Copyright Ned Mohan 2008

17

DESIGN CONSIDERATIONS Switching Frequency Selection of Transistors and Diodes Magnetic components Capacitor Selection
C ESL ESR

LII rms Ap = kwJmaxBmax

Ap =

kconv Vy Iy,rms kwBmax Jmax fs

Figure 2-10 Capacitor ESR and ESL.

Copyright Ned Mohan 2008

18

PSpice Modeling: Capacitor_Characteristics.sch

Copyright Ned Mohan 2008

19

Simulation Results: Individual and Total Admittances

50A

40A

30A

20A

10A

0A 1.0KHz I(L2)

I(L1)

3.0KHz -I(V3)

10KHz

30KHz Frequency

100KHz

300KHz

1.0MHz

Copyright Ned Mohan 2008

20

Thermal Design
T j = Ta + ( R jc + R cs + R sa ) Pdiss
isolation pad case chip ambient heat sink

Tj R jc Pdiss

Tc Rcs

Ts R sa

Ta

Ta

Tj

Tc

Ts (a)

Ta
(b)
21

Figure 2-11 Thermal design: (a) semiconductor on a heat sink, (b) electrical analog.
Copyright Ned Mohan 2008

Design Tradeoffs

size Heatsink

Magnetics and capacitors

fS

Figure 2-12 Size of magnetic components and heat sink as a function of frequency.
Copyright Ned Mohan 2008

22

PWM CONTROLLER IC
V r vc (t) vr

0
q(t)

dTs

t
Ts

1
t

0
Figure 2-13 PWMIC waveforms.

d (t ) =

vc ( t ) V r

Copyright Ned Mohan 2008

23

APPENDIX 2A:

Diode Reverse Recovery and Power Losses

Pdiode , F = (1 d ) VFM I o

Diode Forward Loss:

Diode Reverse Recovery Characteristic:

trr ta 0 Qrr tb t I RRM

VFM 0

Vd , neg

Figure 2A-1 Diode reverse recovery characteristic.

Copyright Ned Mohan 2008

Diode Switching Losses:

1 Pdiode , sw = ( I RRM tb ) Vd , neg f s 24 2

PSpice Modeling: Power_pole_MUR2020.sch

Copyright Ned Mohan 2008

25

Simulation Results: MOSFET Voltage and Current

50

40

30

20

10

-10 0s V(M2:d,M2:s)

0.2us -I(V2)

0.4us

0.6us

0.8us Time

1.0us

1.2us

1.4us

1.6us

Copyright Ned Mohan 2008

26

Example 2A-1 In the switching power-pole of Fig. 2-4a, Vin = 40V and the output current is I o = 5 A . The switching frequency f s = 200 kHz . The MOSFET switching times are tri = 15 ns and t fv = 15 ns . The diode snaps-off at reverse recovery such that

trr = ta = 20 ns (such that tb = 0 ) and the peak reverse-recovery current I RRM = 2 A .

Calculate the additional power loss in the MOSFET due to the diode reverse recovery.
Vin vDS t fv

t fv I RRM iD Io

psw 0 tri ta = trr t

Figure 2A-2 Waveforms with diode reverse-recovery current.

Copyright Ned Mohan 2008

27

Summary

Design of a Switching Power-Pole Type of Transistors Switching Characteristics and Losses Justification of an Ideal Switch Thermal Design Selection of the Optimum Switching Frequency

Copyright Ned Mohan 2008

28