H5N2509P

Silicon N Channel MOS FET High Speed Power Switching

REJ03G1109-0200 (Previous: ADE-208-1378) Rev.2.00 Sep 07, 2005

Features
Low on-resistance: R DS (on) = 0.053 typ. Low leakage current: IDSS = 1 A max (at VDS = 250 V, VGS = 0 V) High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V) Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) Avalanche ratings

Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D

1. Gate 2. Drain (Flange) 3. Source

Rev.2.00 Sep 07, 2005 page 1 of 6

H5N2509P

Absolute Maximum Ratings

(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1

Value 250 30 30 120 30 120 30 150 0.833 150 55 to +150

Unit V V A A A A A W C/W C C

IDR (pulse) Note 3 IAP Pch ch-c Tch Tstg

Note 1

Note 2

Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 3.0 17 Typ 0.053 28 3600 450 115 48 120 190 110 110 19 53 0.9 210 1.8 Max 0.1 1 4.0 0.069 1.35 Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 15 A VGS = 10 V RL = 8.3 Rg = 10 VDD = 200 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/s
Note 4

Rev.2.00 Sep 07, 2005 page 2 of 6

H5N2509P

Main Characteristics
Power vs. Temperature Derating
Pch (W)
200 1000 300

Maximum Safe Operation Area

ID (A)

150

100 30
PW 1
DC

10

Channel Dissipation

100

50

Drain Current

10 m 0 =1 s s 0m Op s( 10 1s er at ho ion t) (T 3 c= Operation in 25 C 1 this area is )

0.3 0 0 50 100 150 200 0.1 1

limited by RDS(on) Ta = 25C 3 10 30 100 300 1000

Case Temperature

Tc (C)

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

100 10 V 8V Pulse Test 7V 100

Typical Transfer Characteristics

VDS = 10 V Pulse Test

ID (A)

60

ID (A) Drain Current

6V 5.5 V 5V VGS = 4.5 V

80

80

60

Drain Current

40

40 Tc = 75C 25C 25C 0 0 2 4 6 8 10

20

20

0 0 4 8 12 16 20

Drain to Source Voltage

VDS (V)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs. Gate to Source Voltage

Drain to Source Saturation Voltage VDS(on) (V)
5 Pulse Test 4

Static Drain to Source on State Resistance vs. Drain Current

Drain to Source on State Resistance RDS(on) (m)
200 Pulse Test 100 VGS = 10 V, 15 V 50

3 ID = 30 A

15 A 5A

20

0 0 4 8 12 16 20

10 1 2 5 10 20 50 100

Gate to Source Voltage

VGS (V)

Drain Current

ID (A)

Rev.2.00 Sep 07, 2005 page 3 of 6

H5N2509P
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
200 100 50 20 10 5 2 1 0.5 0.2 0.2 VDS = 10 V Pulse Test 0.5 1 2 5 10 20 50 100 25C 75C Tc = 25C Pulse Test VGS = 10 V

Static Drain to Source on State Resistance RDS(on) (m)

Forward Transfer Admittance vs. Drain Current

160 ID = 30 A

120

80 5A 40

15 A

0 40

40

80

120

160

Case Temperature

Tc (C)

Drain Current

ID (A)

Body-Drain Diode Reverse Recovery Time

1000

Typical Capacitance vs. Drain to Source Voltage

50000 20000 VGS = 0 f = 1 MHz

Reverse Recovery Time trr (ns)

500

di / dt = 100 A / s VGS = 0, Ta = 25C

Capacitance C (pF)

10000 5000 2000 1000 500 200 100 50 Crss 0 20 40 60 80 100 Coss Ciss

200 100 50

20 10 0.1

0.3

10

30

100

Reverse Drain Current

IDR (A)

Drain to Source Voltage

VDS (V)

Dynamic Input Characteristics

VDS (V)
ID = 30 A VGS 400 VDD = 50 V 100 V 200 V
VDS

Switching Characteristics
VGS (V)
20 10000 VGS = 10 V, VDD = 125 V PW = 10 s, duty 1 % RG = 10 1000 td(off) 100 tf td(on) tr 10 0.1 0.3 1 3 10 30 100

500

16

Drain to Source Voltage

300

12

200

100

0 0

VDD = 200 V 100 V 50 V 40 80 120 160

0 200

Gate to Source Voltage

Switching Time t (ns)

Gate Charge

Qg (nC)

Drain Current

ID (A)

Rev.2.00 Sep 07, 2005 page 4 of 6

H5N2509P
Reverse Drain Current vs. Source to Drain Voltage
100

Gate to Source Cutoff Voltage VGS(off) (V)

Gate to Source Cutoff Voltage vs. Case Temperature

5

IDR (A)

Pulse Test

80 VGS = 0 V 60

4 ID = 10 mA 3 1 mA 0.1 mA

Reverse Drain Current

40 20 5 V 10 V 0 0 0.4 0.8 1.2 1.6 2.0

1 VDS = 10 V 0 50 0 50 100 150 200

Source to Drain Voltage

VSD (V)

Case Temperature

Tc (C)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance s (t)
3 Tc = 25C

D=1 0.5

0.3
0.2

0.1

0.1
0.05

ch c (t) = s (t) ch c ch c = 0.833C/W, Tc = 25C PDM

uls e

D=
PW T

0.03

0.02 1 0.0
1s

PW T

p ot

0.01 10

100

1m

10 m

100 m

10

Pulse Width

PW (S)

Switching Time Test Circuit

Waveform

Vin Monitor D.U.T. RL 10 Vin 10 V

Vout Monitor Vin Vout VDD = 125 V 10% 10%

90%

10%

90% td(on) tr

90% td(off) tf

Rev.2.00 Sep 07, 2005 page 5 of 6

H5N2509P

Package Dimensions
JEITA Package Code
SC-65

RENESAS Code
PRSS0004ZE-A

Package Name TO-3P / TO-3PV

MASS[Typ.] 5.0g

5.0 0.3

Unit: mm
4.8 0.2 1.5

15.6 0.3

0.5

1.0

3.2 0.2

14.9 0.2

19.9 0.2

1.6 1.4 Max 2.0 2.8

2.0

1.0 0.2 3.6 0.9 1.0

18.0 0.5

0.6 0.2

5.45 0.5

5.45 0.5

Ordering Information
Part Name Quantity Shipping Container H5N2509P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Rev.2.00 Sep 07, 2005 page 6 of 6

0.3

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