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January 2009
QFET
FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
1A, 600V, RDS(on) = 11.5 @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
RoHS Compliant
D D
!
D-PAK
FQD Series
I-PAK
G D S
FQU Series
G!
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ ---Max 4.53 50 110 Units C/W C/W C/W
Rev. A1, January 2009
FQD1N60C / FQU1N60C
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = VDS = 40 V, ID = 0.5 A 0.5 A
(Note 4)
2.0 ---
-9.3 0.75
4.0 11.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 19 3.5 170 25 4.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V
(Note 4, 5)
--------
24 52 36 64 6.2 ---
ns ns ns ns nC nC nC
------
---190 0.53
1 4 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 1.1 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQD1N60C / FQU1N60C
Typical Characteristics
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
150 C
-55 C 25 C
o
10
-1
10
-2
10
-1
10
10
10
-1
10
30
VGS = 10V
20
25
10
15
10
VGS = 20V
150 25
10
-1
5
Note : TJ = 25
0 0.0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
250
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
200
10
Ciss
Capacitance [pF]
150
VDS = 480V
Coss
100
Notes ; 1. VGS = 0 V 2. f = 1 MHz
50
Crss
2
Note : ID = 1A
0 -1 10
10
10
FQD1N60C / FQU1N60C
Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 0.5 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
10
1.0
100 s
10
1 ms 10 ms 100 ms DC
10
-1
Notes :
1. TC = 25 C
o
10
-2
10
10
10
10
0.8
0.6
0.4
0.2
0.0 25
50
75
100
125
150
( t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z J C ( t) = 4 .5 3 /W M a x . 2 . D u ty F a c to r, D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t)
PDM t1 t2
JC
10
-1
0 .0 1 s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
FQD1N60C / FQU1N60C
VGS DUT
3mA
Qgd
Charge
RL VDD
VDS
90%
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
VDS ID RG 10V
tp
Time
FQD1N60C / FQU1N60C
DUT
+ VDS _
I SD
Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
FQD1N60C / FQU1N60C
Mechanical Dimensions
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: millimeters
FQD1N60C / FQU1N60C
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
FQD1N60C / FQU1N60C
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Rev. I37
2009 Fairchild Semiconductor Corporation