Resolution enhancement techniques: Mask engineering or wavefront engineering

Sharp features are lost because higher frequencies are lost due to diffraction. These effects are calculable and can be compensated for. The resolution of an optical system can be improved by increasing the numerical aperture and reducing the wavelength. Increasing the numerical aperture and reducing the wavelength, however, decrease the depth of the focus. Further reduction in the wavelength requires the development of new optical systems and resist compositions.

It is known that in the sub 0.5m range, a perfect image on the mask can, from diffraction effect, result in a distorted pattern in the resist. OPC mask attempt to reverse the situation by having a distorted image on the mask that is design to, produce a perfect image on the resist. A computer is used to analyze exposure process conditions. However, the use of OPC are so difficult that they are unlikely to be implemented on a large scale in the near future.

Resolution enhancement techniques: (1) Optical proximity corrections (OPC)

Resolution enhancement techniques:

OPC

(3)

Resolution enhancement techniques: (2) Optical Phase Shifting

Diffraction problem could be more pronounced as two mask patterns get closer together OPS uses phase shifting to sharpen printed images. These techniques can allow existing exposure tools to be used in manufacturing at least one more technology generation.
Unresolved pattern

(4)

Off-axis Illumination technique

Next Generation lithographic methods

Why is optical lithography so widely used and what makes it such a promising method? It has high throughput, good resolution, low cost and ease in operation. However, due to deep submicron IC process requirements, optical lithography has limitation that have not yet been solved. Therefore, it is required to find alternatives to optical lithography. The possible promising techniques are: Electron beam lithography Extreme Ultraviolet Lithography X-ray lithography Ion beam lithography

When the angle of illumination and the angle of diffraction are well matched, the amount of light diffracted can be enhanced and the contrast of the image improved.

Schematic of an electron beam lithography machine.

In raster scan system The beam scan sequentially over every possible location (pixel) on the mask and is Turned off where no exposure Is required. In a vector scan system The beam is directed only to the Requested pattern features and jumps from features to Features.

Advantage: Generation of submicron Resist geometries Greater depth of focus Direct patterning on a Semiconductor without Using a mask. Currently EBL is the Technology of choice for Mask generation due to Its ability to accurately define small features.

Issue associated with EBL: Proximity effect

In EBL scattering causes the electron beam to broaden and expose a large volume of resist then expected.

(a) Raster scan writing scheme. (b) Vector scan writing schemes. (c) Shapes of electron beam: round, variable, and
cell projection.

Scattering with angular limitation projection electron beam lithography (SCALPEL)

Challenges: EUV is strangely absorbed In all materials. Lithography process must be performed in vacuum Mask blank must also be multilayer coated to minimize Its reflection.

This approach has not yet been in a full scale manufacturing environment, but It appears to have significant promise for future lithography needs.

Schematic representation of an extreme ultraviolet (EUV) lithography system.

Schematic representation of a proximity x-ray lithography system.

The primary factor limiting resolution in optical lithography is diffraction. However, because of advancement in excimer lasers, photoresist chemistry and resolution enhancement techniques , optical lithography will remain the main stream technology , at least to the 100nm generation.

Although all non optical lithography techniques have 100 nm or better resolution , each process has its own limitations: Proximity effect in electron beam lithography Mask blank production difficulties in EUV lithography Mask fabrication complexity in X-ray lithography Random space charge effect in ion beam lithography