Advanced Technical Information

Bidirectional Switch with IGBT and fast Diode Bridge

in ISOPLUS i4-PACTM

FIO 50-12BD IC25

VCES VCE(sat) typ.

= 50 A = 1200 V = 2.0 V

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IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 32 50 VCES 10 200 V V A A A s W

Features IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications switches to control bidirectional current flow by a single control signal: matrix converters spare matrix converters AC controllers

Symbol

Conditions

Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 150 60 700 50 3.6 3.0 2 250 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W

VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJS

IC = 30 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V

Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15 V; RG = 39

VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A

2001 IXYS All rights reserved

IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627

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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670

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FIO 50-12BD
Diodes Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 48 25 A A Dimensions in mm (1 mm = 0.0394")

Symbol VF IRM t rr RthJC RthJS

Conditions IF = 30 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode)

Characteristic Values min. typ. max. 2.4 1.8 27 150 2.6 2.8 V V A ns 1.3 K/W K/W

Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N

Characteristic Values min. typ. max. 40 pF mm mm g

2001 IXYS All rights reserved

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