2N7002F

N-channel TrenchMOS FET

Rev. 03 28 April 2006 Product data sheet

1. Product prole
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

1.2 Features
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology

1.3 Applications
s Logic level translator s High-speed line driver

1.4 Quick reference data

s VDS 60 V s RDSon 2 s ID 475 mA s Ptot 0.83 W

2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
D

Simplied outline

Symbol

SOT23

mbb076

Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

3. Ordering information
Table 2: Ordering information Package Name 2N7002F TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number

4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage peak gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s tp 50 s; pulsed; duty cycle = 25 % Tsp = 25 C; VGS = 10 V; see Figure 2 and 3 Tsp = 100 C; VGS = 10 V; see Figure 2 Tsp = 25 C; pulsed; tp 10 s; see Figure 3 Tsp = 25 C; see Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min 65 65 Max 60 60 30 40 475 300 1.9 0.83 +150 +150 475 1.9 Unit V V V V mA mA A W C C mA A

Source-drain diode

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

120 Pder (%) 80

03aa17

120 Ider (%) 80

03aa25

40

40

0 0 50 100 150 Tsp (C) 200

0 0 50 100 150 Tsp (C) 200

P tot P der = ------------------------ 100 % P

tot ( 25 C )

ID I der = -------------------- 100 % I

D ( 25 C )

Fig 1. Normalized total power dissipation as a function of solder point temperature

10 ID (A) 1

Fig 2. Normalized continuous drain current as a function of solder point temperature

03ai11

Limit RDSon = VDS / ID tp = 10 s

100 s 10-1 DC 1 ms 10 ms 100 ms 10

-2

10

VDS (V)

102

Tsp = 25 C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

5. Thermal characteristics
Table 4: Rth(j-sp) Rth(j-a)
[1]

Thermal characteristics Conditions see Figure 4

[1]

Symbol Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient

Min -

Typ -

Max 150 350

Unit K/W K/W

Mounted on a printed-circuit board; minimum footprint; vertical in still air

103 Zth(j-sp) (K/W) 102

003aab358

= 0.5 0.2 0.1

10

0.05 0.02 single pulse

1 10-5

10-4

10-3

10-2

10-1

tp (s)

10

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specied. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 A; VGS = 0 V Tj = 25 C Tj = 55 C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = 55 C IDSS drain leakage current VDS = 48 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 15 V; VDS = 0 V VGS = 10 V; ID = 500 mA; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss ton toff VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time source-drain voltage reverse recovery time recovered charge VDS = 50 V; RL = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 VGS = 0 V; VDS = 10 V; f = 1 MHz; see Figure 14 ID = 300 mA; VDS = 30 V; VGS = 10 V; see Figure 11 and 12 0.69 0.1 0.27 31 6.8 3.5 2.5 11 0.85 30 30 50 30 10 10 15 1.5 nC nC nC pF pF pF ns ns V ns nC 0.78 1.45 1.2 2 3.7 4 0.01 10 1 10 100 A A nA 1 0.6 2 2.5 2.75 V V V 60 55 V V Conditions Min Typ Max Unit

Source-drain diode IS = 300 mA; VGS = 0 V; see Figure 13 IS = 300 mA; dIS/dt = 100 A/s; VGS = 0 V

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

1 ID (A) 0.8

03ai13

10

5000 RDSon (m) VGS (V) = 4

03ai15

4.5

4000

0.6 4 0.4

3000 4.5 2000 5

0.2

VGS (V) = 3.5

1000

10

0 0 0.5 1 1.5 VDS (V) 2

0 0 0.2 0.4 0.6 0.8 ID (A) 1

Tj = 25 C

Tj = 25 C

Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
1 ID (A) 0.8
03ai16

Fig 6. Drain-source on-state resistance as a function of drain current; typical values

2.4 a 1.8
03aa28

0.6 1.2 0.4 Tj = 150 C 25 C 0.6 0.2

0 0 2 4 VGS (V) 6

0 -60

60

120

Tj (C)

180

Tj = 25 C and 150 C; VDS > ID RDSon

R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature

Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

3 VGS(th) (V) 2 max

003aab101

10-3 ID (A) 10-4

003aab100

typ

min

typ

max

min

10-5

0 -60

10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3

ID = 0.25 mA; VDS = VGS

Tj = 25 C; VDS = 5 V

Fig 9. Gate-source threshold voltage as a function of junction temperature

10 VGS ID = 0.3 A Tj = 25 C (V) 8 VDS = 30 V
003aab359

Fig 10. Sub-threshold drain current as a function of gate-source voltage

VDS ID VGS(pl)

4
VGS(th)

VGS QGS1 QGS2 QGD QG(tot)

003aaa508

0 0 0.2 0.4 0.6 QG (nC) 0.8

QGS

ID = 300 mA; VDS = 30 V

Fig 11. Gate-source voltage as a function of gate charge; typical values

Fig 12. Gate charge waveform denitions

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

1 IS (A) 0.8

03ai17

102

03ai18

C (pF)

Ciss

0.6 10 0.4 Coss 0.2 150 C 0 0.2 Crss

Tj = 25 C 1 10-1

0.4

0.6

0.8

VSD (V)

10

VDS (V)

102

Tj = 25 C and 150 C; VGS = 0 V

VGS = 0 V; f = 1 MHz

Fig 13. Source current as a function of source-drain voltage; typical values

Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

7. Package outline
Plastic surface-mounted package; 3 leads SOT23

HE

v M A

Q A A1

1
e1 e bp

2
w M B detail X Lp

1 scale

2 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1

OUTLINE VERSION SOT23

REFERENCES IEC JEDEC TO-236AB JEITA

EUROPEAN PROJECTION

ISSUE DATE 04-11-04 06-03-16

Fig 15. Package outline SOT23

2N7002F_3 Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

8. Revision history
Table 6: Revision history Release date 20060428 Data sheet status Product data sheet Change notice Doc. number Supersedes 2N7002F_2 Document ID 2N7002F_3 Modications:

Table 5 Characteristics: VGS(th) ID condition modied Table 5 Characteristics: VGS(th) maximum limits modied Table 5 Characteristics: RDSon typical values modied Table 5 Characteristics: gfs removed Table 5 Characteristics: Addition of QG(tot), QGS and QGD Table 5 Characteristics: Ciss, Coss and Crss values modied Table 5 Characteristics: ton and toff typical values modied Figure 3, 4, 5, 6, 7, 9, 10, 13 and 14: modied Figure 11: added Product data sheet Product data 9397 750 14945 9397 750 09096 2N7002F-01 -

2N7002F_2 2N7002F-01

20050509 20020211

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

9. Data sheet status

Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualication Denition This data sheet contains data from the objective specication for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specication. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specication. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN).

III

Product data

Production

[1] [2] [3]

Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Denitions
Short-form specication The data in a short-form specication is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values denition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specied use without further testing or modication.

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specied.

12. Trademarks
Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

11. Disclaimers
Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

2N7002F_3

Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 03 28 April 2006

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Philips Semiconductors

2N7002F
N-channel TrenchMOS FET

14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product prole . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Denitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11

Koninklijke Philips Electronics N.V. 2006

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 April 2006 Document number: 2N7002F_3

Published in The Netherlands