RFG50N05, RFP50N05

Data Sheet July 1999 File Number

2873.3

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETS manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772.

Features
50A, 50V rDS(ON) = 0.022 UIS Rating Curve (Single Pulse) 175oC Operating Temperature

Symbol
D

Ordering Information
PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05

NOTE: When ordering, include the entire part number.

Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL)

JEDEC TO-220AB
SOURCE DRAIN GATE

DRAIN (FLANGE)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

RFG50N05, RFP50N05
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied RFG50N05, RFP50N05 50 50 50 120 20 132 0.88 Refer to UIS SOA Curve -55 to 175 300 260 UNITS V V A A V W W/ oC
oC oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 150oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 0.250A, VGS = 0V (Figure 9) VDS = VGS, ID = 0.250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(tot) Qg(10) Qg(th) RJC RJA TO-220 TO-247 VGS = 0-20V VGS = 0-10V VGS = 0-2V VDD - 40V, ID = 50A RL = 0.8, IG(REF) = 1.5mA (Figure 11) VGS = 20V ID = 50A, VGS = 10V (Figure 7) VDD = 25V, ID 25A, RL = 1.0, RGS = 6.67, VGS = 10V (Figure 11) MIN 50 2.0 TYP 15 55 60 15 MAX 4.0 1 25 100 0.022 100 100 160 80 6 1.14 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC
oC/W oC/W oC/W

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current, Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

Source to Drain Diode Specications

PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: pulse width 300s duty cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 50A ISD = 50A, dlSD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns

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RFG50N05, RFP50N05 Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 ID, DRAIN CURRENT (A)

Unless Otherwise Specied

60 50

40 30 20 10 0

125 50 75 100 TC , CASE TEMPERATURE (oC)

150

175

25

50

75 125 100 TC, CASE TEMPERATURE (Co)

150

175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

100

10

OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC

IAS, AVALANCHE CURRENT (A)

Tj = MAX RATED TC = 25oC

1000

ID, DRAIN CURRENT (A)

If R = 0 tav = (L)(Ias)/(1.3 RATED BVdss - Vdd) If R 0 tav = (L/R) In[(Ias x R)/(1.3 RATED BVdss - Vdd) + 1]

Idm 100 Starting Tj = 25oC Starting Tj = 150oC

0.1

10 VDS, DRAIN TO SOURCE VOLTAGE (V)

100

10 0.01

0.1

10

tAV, TIME IN AVALANCHE (ms)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING

IDS(ON), DRAIN TO SOURCE CURRENT (A)

120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX o 100 TC = 25 C VGS = 10V 80 60 VGS = 5V VGS = 7V VGS = 8V VGS = 9V VGS = 6V

120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 100 80 60 40 20 -55oC

25oC

175oC

ID, DRAIN CURRENT (A)

40 20

VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5

0 0 2.5 5 7.5 VGS, GATE TO SOURCE VOLTAGE (V) 10

FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

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RFG50N05, RFP50N05 Typical Performance Curves

3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 50A

Unless Otherwise Specied (Continued)

2.0 NORMALIZED GATE TO SOURCE THRESHOLD VOLTAGE

VGS = VDS ID = 250A

1.8

1.2

1.5 1 0.5 0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200

0.8

0.4

0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE

2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

ID = 250A

5000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD

1.6 C, CAPACITANCE (pF)

4000

1.2

3000

CISS

0.8

2000 COSS 1000 CRSS

0.4

0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200

0 1 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs. JUNCTION TEMPERATURE

50 VDS, DRAIN TO SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10 VGS, GATE TO SOURCE VOLTAGE (V)

8 VDD = BVDSS

37.5

VDD = BVDSS

25

RL = 1 IG(REF) = 1.5mA VGS = 10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25 BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE

12.5

0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

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RFG50N05, RFP50N05 Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

tON VDS VDS VGS RL

+

tOFF td(OFF) tr tf 90%

td(ON)

90%

DUT RGS VGS

VDD

10% 90%

10%

VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 14. SWITCHING TIME TEST CIRCUIT

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

VDS RL VDD VDS VGS = 20V VGS

+

Qg(TOT)

Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V

DUT Ig(REF)

FIGURE 16. GATE CHARGE TEST CIRCUIT

FIGURE 17. GATE CHARGE WAVEFORMS

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RFG50N05, RFP50N05

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