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Vol 02, Issue 02; August-December 2011 International Journal of Electrical Engineering Applications Research
2011 - TECHNICALJOURNALS, Peer Reviewed International Journals-IJCEA, IJESR, RJCSE, PAPER, ERL, IRJMWC, IRJSP, IJEEAR, IJCEAR, IJMEAR, ICEAR, IJVES, IJGET, IJBEST TJ-PBPC, India; Indexing in Process - EMBASE, EmCARE, Electronics & Communication Abstracts, SCIRUS, SPARC, GOOGLE Database, EBSCO, NewJour, Worldcat, DOAJ, and other major databases etc.,
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Figure (1) (a) Forward converter with transformer reset winding. (b) Forward converter with RCD clamp. 2. Proposed Methology: The snubber is comprised of the capacitor C1 tertiary transformer winding n3, and a pair of snubber diodes DS1 and DS2. The resemblance with the regenerative snubber of the flyback converter in Fig. 2(b) is obvious. However, the forward converter operation is very much different from the flyback converter operation. The dissimilarities arise due to the different winding polarity arrangement, reset requirement of the transformer core and nature of the rectifier, and the output filter. In a flyback converter, the input and output circuits conduct consecutively whereas, in forward converter, the primary and secondary conduct simultaneously. While the capacitive filter in flyback converter clamps the secondary winding to the output voltage, inductive output filter in the forward converter can sustain primary current and affects the snubber [6], [7]. Flyback converter operates by charging the transformer core and then discharging the magnetizing energy to the load, thus, transformer reset is natural whereas, a forward converter lacks such reset mechanism. Accordingly, the snubber task in a flyback converter is to absorb the leakage energy whereas, in the forward converter the snubber should provide both core reset and discharge of leakage inductance.
Figure (2) (a) Forward converter with the non dissipating (b) Fly back converter with the regenerative snubber. Snubber. 3. Energy regenerative snubber: The transformer is central to analyzing the operation of the forward converter with the proposed regenerative snubber as shown in Fig. 3. The analysis to follow relies on the three winding transformer model Here, the transformers magnetizing and the leakage inductances are all referred to the primary In the following, it is assumed that all the semiconductor switches are ideal with zero forward voltage drop and no storage time[7], [8]. It is also assumed that the ac current ripple of the large output filter inductor L0 is negligible. Therefore, to study the snubber operation within one cycle of the switching frequency, the filter and load are substituted by a dc current sink I0. These assumptions lead to the equivalent circuit, which shows the forward converter with the proposed regenerative snubber with the load side reflected to the primary also explicitly reveals how the transformers magnetizing and leakage inductances of the primary and secondary affect the circuit. The snubber and switch capacitances and transformer inductances comprise a rather complicated multiresonant system [9], [10], [11]. Resonant networks are known to exhibit many operational modes as function of the switching frequency, duty cycle, and loading conditions. The waveforms of a main operational mode of the proposed energy regenerative snubber. Inspection of
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Vol 02, Issue 02; August-December 2011 International Journal of Electrical Engineering Applications Research
the converters waveforms reveals that during one cycle of the switching frequency the snubber goes through nine topological states.
Figure (3) Forward converter with the proposed energy regenerative snubber The equivalent circuits of the snubber states are given. The descriptions are as follows: State A (t0t1) commences as the duty cycle command initiates the power switch turn ON. The equivalent circuit of state A Here, the power switch is ON and applies the input dc voltage to the transformers primary. The rectifier diode D1 is OFF, whereas D2 is ON and carries the output current. The snubber capacitor C1 is allowed to discharge on the tertiary winding via the snubber diode DS2 . Initially, C1 is positively charged and still holding some of the energy absorbed during the transformer reset from the preceding cycle. Now, the leakage inductances LL1 and LL3 start resonating and exchange energy with the snubber capacitor C1 . The voltage across C1 rings, and reverses polarity. State A terminates as the voltage across C1 change polarity and turns D= ON.
Figure 3(a) Equivalent of state A State B (t1t2) commences as the power rectifiers D1 start conducting. The equivalent circuit of state B is in figure 3(b), the snubber capacitor C1 is reflected to the primary. The snubber capacitance resonates with all three leakage inductances LL1, LL2 and LL3 The resonant current commutates the output rectifiers. StateBterminates as the voltage across C1 reaches (Vg) and the snubber diodeDS1 clampsC1 voltage to the source. At the final instant of state B, the leakage inductances LL1 and LL3 still store some surplus energy, previously stored in the snubber capacitor. Also worthwhile mentioning that clamping the snubber capacitor to the source ensures correct precharging of C1 , and prepares true zero voltage turn-off condition for the power switch in a later stage.
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State C (t3t4) commences as both the snubber diodes DS1 and DS2 conduct and provide the tertiary winding a conduction path to the input source. Input voltage Vg appears both across the transformers primary and tertiary windings. Transformer is used to reflect the tertiary winding voltage to the primary. The resulting equivalent circuit of state C is shown . The tertiary transformer turn ratio is smaller than unity n3 < 1, hence, the reflected voltage is greater than the input voltage Vg/n3 > Vg, the leakage inductances LL1 and LL3 are discharging. In other words, the snubber is recycling the energy stored in the leakage inductances back to the source via the tertiary winding. This is the regenerative action of the snubber. During the state C, the secondary winding voltage raises according to the secondary to tertiary turns ratio. For this reason, a voltage pulse appears across the free-wheeling diode D2 with a magnitude of approximately (n2/n3 )Vg . State C terminates as the leakage inductances are discharged and snubber diodes are cutoff under zero current condition. The primary leakage inductance LL1 keeps carrying both the magnetizing and the reflected load current components.
Figure 3(c) Equivalent of state C State D (t4t5 ) commences as both the snubber diodes D2 are cutoff. The equivalent circuit of state D is shown in Fig. 3(d). Here, the power transformer supplies the load side, the transformer magnetizing inductance is charged and the magnetizing current ramps. State D continues for a while until the power transistor is turned off by the drive signal command.
Figure 3(d) Equivalent of state D State E (t5t6) commences as the power transistor is cutoff. The equivalent circuit of State E is. Here, the transformers magnetizing current forces the snubber diodeDS1ON. Since the snubber capacitor C1 is precharged to (Vg) from state C, the power switch turns OFF under zero voltage condition. The voltage across C1 is discharged by both the magnetizing and the reflected load currents. This means that some of the energy stored in C1 is released to the load side. Negative voltage across C1 keeps the rectifier diode D1 on and, as a result, the reflected load current keeps flowing in the primary winding. As the voltage across C1 decreases, the voltage across the switch capacitance Cds increases. Both the snubber capacitor C1, and the switch parasitic capacitance Cds appear in parallel and form an equivalent snubber capacitance referred to the primary.
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State F (t6t7) terminates as the snubber capacitor C voltage polarity reverses allowing the rectier D21to cut in. The duration of state E interval depends on the operating conditions. Under heavy load, the reected output current quickly discharges the snubber capacitance. At light loading, however, the duration of state E is the longest, approaching a quarter of the resonant period determined by the total capacitance seen by the primary winding and the total primary inductance
Figure 3(f) Equivalent of state F State G (t7-t8) commences as the power rectier DON. The equivalent circuit of the state F is shown in Fig. 3(g). Here, the snubber capacitor C12is turn and the switch capacitance C resonate with the leakage inductances LL1 and L. The resonance is driven by the transformer magnetizing current. The large magnetizing inductance only marginally affects the resonant frequency. The resonant current starts the rectiers commutation so that D 1 current drops while D current rises. State F is terminated as D1 2L 2is turned OFF at zero current and D conducts the full load current.ds2. The duration of state F depends on the load current and is much shorter than quarter cycle of the leakage resonant period.
Figure 3(g) Equivalent of state G State H (t8-t9) commences as DS1is cutoff. The equivalent circuit of state H is shown in Fig. 3(h). Here, the switch parasitic capacitor Cds resonates with the leakage inductances L and the magnetizing inductance Lm Initially, C is charged above the source voltage Vgds, and thus, the magnetizing inductance current reverses. Therefore, some of the energy stored in C is recycled to the source. State H ends as the switch capacitance voltage drops and allows the snubber diode Dds to start conducting.S1 L2. The duration of state H is about a quarter of resonant period determined by the magnetizing inductance and the switch drain source capacitance Cds.
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State I (t9t10) commences as DS1 turns ON. The equivalent circuit of state I is shown in Fig. 3(i). Here, D conducts and allows discharge of the snubber capacitance C1S1 via both the primary and tertiary windings. Note, that since the windings appearin series, the equivalent inductance seen by C is approximately (1+n3)2Lm1. The negative magnetizing current recycles some of the snubber energy back to the source. State I lasts until the end of the switching cycle.
Figure (4) forward converter with snubber by using buck convereter An experimental forward converter with energy regenerating snubber was built and tested. The converter specs were as follows. Input voltage: Vg = 28V dc; output voltage: V0 = 5V dc, output current: I0 max = 5A dc; switching frequency: fs = 200 kHz. Through the experiments, the converter was operated in a wide duty cycle range: Dmax =0.7, Dmax = 0.1. The transformers secondary and tertiary turns ratio were: n2 = n3 = 0.4. The primary inductance was Lp = 411H and the leakage inductances were: LL1 = 20, LL2 =6, and LL3 = 6H, respectively. The snubber capacitance was found using (10) as: C1 3nF. The output filter was comprised of L0 = 260 H and C0 100 F, respectively.
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In a typical nonintegrated switching dcdc converter, significant energy is dissipated by the parasitic impedances of the interconnect among the nonintegrated devices (the filter inductor, filter capacitor, power transistors, and pulse width modulation circuitry) Moreover, the integrated active devices of a pulse width modulation circuit are typically fabricated in an old technology with poor parasitic impedance characteristics. Integrating a dcdc converter with a microprocessor can potentially lower the parasitic losses as the interconnect between (and within) the dcdc converter and the microprocessor is reduced. Additional energy savings can be realized by utilizing advanced deep sub micrometer fabrication technologies with lower parasitic impedances. The efficiency attainable with a monolithic dcdc converter, therefore, is higher than nonintegrated dcdc converter. Generally, in order to attain higher efciency, buck derived converters should be operated at as large a duty cycle as possible. The duty cycle, however, is limited by switching stress. To nd an optimum operating point, switch utilization function is considered next. As you can see there are only four main components: switching power MOSFET Q1, flywheel diode D1, inductor L and output filter capacitor C1. A control circuit (often a single IC) monitors the output voltage, and maintains it at the desired level by switching Q1 on is and off at a fixed rate (the converters operating frequency), but with a varying duty cycle (the proportion of each switching period that Q1 turned on).When Q1 is turned on, current begins flowing from the input source through Q1and L, and then intoC1 and the load. The magnetic field in L therefore builds up, storing energy in the inductor with the voltage drop across L opposing or .bucking. part of the input voltage. Then when Q1 is turned off, the inductor opposes any drop in current by suddenly reversing its EMF, and now supplies current to the load itself via D1.
The non dissipating snubber reported in uses a discrete inductor to perform the reversal of the snubber capacitor voltage and feed the energy back to the source. Recycling of the energy takes place during the clamp state. However, when the converter operates with low duty cycle, the magnetizing energy the capacitor absorbs may be in sufcient to raise the capacitor voltage to the value of the source voltage. Consequently, the clamp state will not occur and the nondissipating snubber changes the operating mode. The undercharged snubber capacitor cannot provide true ZVS condition for the power switch and the power stage efciency deteriorates The nondissipating snubber provides no means to make any readjustments in order to improve the performance. Contrary to that, the proposed regenerative snubber uses a tertiary transformer winding and benecially exploits the transformer leakage inductances. The tertiary winding turn-ratio introduces another degree of freedom and can be adjusted to ensure a complete precharge of the snubber capacitor to the full value of the source voltage. As a result, mode changes can be avoided and perfect ZVS conditions for the power switch can be provided for a wide range of operation conditions. This is one of the most important advantages of the proposed snubber circuit over the previously reported counterpart. The disadvantages of the proposed snubber are the more elaborated transformer structure, and second, the voltage spike which appears across the free-wheeling diode during the interval C. 6. Acknowledgments: I would like to express their thanks to the management of Vignan University and the department of EEE for their encouragement and support during this work. Further, VIIT Duvvada acknowledges the technical support of Department of EEE.
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6. References: [1]. R. W. Ericson and D. Maksimovic, Fundamentals of Power Electronics, 2nd ed. Norwell, MA: Kluwer, 2000. [2]. N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics; Converter Applications and Design, 3rd ed. New York: Wiley, 1989. [3]. C. D. Bridge, Clamp voltage analysis for RCD forward converters, in Proc. IEEE APEC, 2000, pp. 959965. [4]. M. Domb, R. Red1, and N. O. Soka1, Nondissipative turn-off Snubber alleviates switching power dissipation, second-breakdown stress and VCE overshoot, in Proc. PESC Rec., Jun. 1982, pp. 445454. [5]. M. Domb and R. Redl, Nondissipative turnoff Snubber in a forward converter: Analysis design procedure, and experimental verification, in Proc. PCI, Oct. 1985, pp. 5468. [6]. T. Ninomiya, T. Tanaka, and K. Harada, Analysis and optimization of a nondissipative LC turn-off Snubber, IEEE Trans. Power Electr., vol. 3, no. 2, pp. 147156, Apr. 1988. [7]. T. Tanaka, T. Ninomiya, and K. Harada, Design of a non dissipative turnoff Snubber in a forward converter, in IEEE Power Electron. Spec. Conf. PESC Rec., vol. 2, 1114 Apr. 1988, pp. 789796. [8]. M. Jinno, P. Y. Chen, and K. C. Lin, An efficient active LC Snubber for forward converters, IEEE Trans. Power Electron., vol. 24, no. 6, pp. 15221531, Jun. 2009. [9]. M. Jinno, Efficiency improvement for SR forward converters with LC snubber, IEEE Trans. Power Electron., vol. 16, no. 6, pp. 812820, Nov. 2001. [10]. C.-S. Liao and K. M. Smedley, Design of high efficiency Flyback [11]. Converter with energy regenerative snubber, in Proc. Appl. Power Electron. Conf. Expo. (APEC 2008), 2428 Feb., pp. 796800. Authors Biography: K.Satyanarayana was born in India, A.P, in 1986. He received the B.Tech degree from JNTU, Hyearabad and M.E. degree from JNTU, Kakinada, A.P, India in 2008, 2011 respectively. From 2009-2011 he worked as Assistant professor in Electrical & Electronics Engineering. He is pursuing Ph.D in Power Electronics from Vignan University. His research interests include power systems and power electronics. He has published 9 publications in various international journals and conferences.
Saheb Hussain MD was born in India, A.P, in 1987. He received the B.Tech from JNTUH and M.E, degree from JNTU, Kakinada A.P, India in 2008, 2011 respectively. He is working as Asst.professor in Electrical & Electronics Engineering in Vignan Institute of Information Technology. His research interests include power systems and its applications.
G.Babji was born in India, A.P., in 1987. He received the B.Tech from JNTU Hyderabad and M.E. degree from JNTU Kakinada, A.P., India in 2008, 2011 respectively. He is working as Assistant professor in Electrical & Electronics Engineering from TRR College of Engineering, Hyderabad. His research interest focused on power systems and nuclear technology.
Harikishore.Kakarla was born in Vijayawada, Krishna (Dist.), AP, India. He received B.Tech. in Electronics & Communication Engineering from St. Johns College of Engg. &Tech, Kurnool (Dist.,) AP, India, M.Tech from G. Pulla Reddy Engineering College, Kurnool, AP, India. He is pursuing Ph.D in the area of VLSI in KL University, Guntur, AP, and India. He is working as Assistant Professor for Department of Electronics & Communication Engineering, KL University, Vijayawada, AP, and India. He has published two international journals and one national conference.
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