Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
September 2001
FDC6420C
20V N & P-Channel PowerTrench MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 V RDS(ON) = 95 m @ VGS = 2.5 V Q2 2.2 A, 20V. RDS(ON) = 125 m @ VGS = 4.5 V RDS(ON) = 190 m @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications
DC/DC converter Load switch LCD display inverter
D2 S1 D1
Q2(P)
4
G2
3 2 1
Q1(N)
5 6
SuperSOT
Pin 1
TM
-6
S2 G1
SuperSOT-6
Parameter
Q1
20 12
(Note 1a)
Q2
20 12 2.2 6 0.96 0.9 0.7 55 to +150
Units
V V A
3.0 12
W C
TJ, TSTG
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
C/W C/W
FDC6420C
Electrical Characteristics
Symbol Parameter Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = 250 A ID = 250 A, Ref. to 25C ID = 250 A, Ref. to 25C VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A ID = 250 A, Ref. To 25C ID = 250 A, Ref. to 25C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125C VGS = 4.5 V, ID = 2.2 A VGS = 2.5 V, ID = 1.8 A VGS= 4.5 V,ID=2.2 A,TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V VDS = 5 V ID = 2.5 A ID = 2.0A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
Min
20 20
Typ
Max Units
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance
Q1 Q2 Q1 Q2 Q1
0.5 0.6
1.5 1.5
V mV/C
Q2
ID(on) gFS
Q1 Q2 Q1 Q2
12 6 10 6
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz 324 337 82 88 42 51 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
(Note 2)
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
10 18 14 22 23 20 3 10 4.6
ns ns ns ns nC nC nC
For Q1: VDS =10 V, I DS= 3.0 A VGS= 4.5 V, For Q2: VDS =10 V, I DS= 2.2 A VGS= 4.5 V,
FDC6420C
Electrical Characteristics
Symbol
IS VSD
Parameter
Test Conditions
Q1 Q2
(Note 2) (Note 2)
Min
Typ
Max Units
0.8 0.8 A V
0.7 0.8
1.2 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDC6420C
12
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
2.5V
VGS = 2.0V
1.8 1.6
2.0V
1.4
2.5V
1.2
3.0V
3.5V 4.5V
ID = 1.5A
0.18
1.2
0.14
TA = 125 C
0.1
0.8
0.06
TA = 25 C
0.02
125
150
VDS = 5V
ID, DRAIN CURRENT (A) 8
TA = -55oC
25 C
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
125oC
6
TA = 125oC 25 C -55oC
o
0.2
0.4
0.6
0.8
1.2
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6420C
Typical Characteristics
450 ID = 3A VDS = 5V 15V 10V 360 CAPACITANCE (pF) CISS 270 f = 1 MHz VGS = 0 V
10
1ms
1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 180oC/W TA = 25oC 0.01 0.1 1
1s 10s
0 10 100 0.1 1 10 t1, TIME (sec) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V)
FDC6420C
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.4 RDS(ON), ON-RESISTANCE (OHM)
ID = -1.1 A
0.35 0.3 0.25 0.2
1.2
TA = 125 C
0.15 0.1
0.8
125
150
25 C
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6420C
Typical Characteristics
600 f = 1MHz VGS = 0 V 500 400 CISS 300 200 COSS 100 CRSS 0
10
15
20
0.1
1
D = 0.5 0.2
0.1
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE
OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER
SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET
VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4