STP10NK80ZFP STP10NK80Z - STW10NK80Z

N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

General features
Type STP10NK80Z STW10NK80Z STP10NK80ZFP

VDSS 800V 800V 800V

RDS(on) <0.90 <0.90 <0.90

ID 9A 9A 9A

Pw 160 W 160 w 40 W TO-220

1 2 3

3 1 2

TO-220FP

Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability
TO-247

Description
The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube

July 2006

Rev 6

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Contents

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 4 5

Test circuit

................................................ 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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Electrical ratings

Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM(2) PTOT

Absolute maximum ratings

Value Parameter TO-220/ TO-247 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor 9 6 36 160 1.28 4 4.5 --55 to 150 2500 800 800 30 9(1) 6(1) 36(1) 40 0.32 TO-220FP V V V A A A W W/C KV V/ns V C Unit

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k) dv/dt

(3)

Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature

VISO TJ Tstg

1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD di/dt 9A, 200A/s,VDD V(BR)DSS, Tj TJMAX

Table 2.
Symbol Rthj-case Rthj-a Tl

Thermal data
Value Parameter TO-220 TO-220FP Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 0.78 62.5 300 3.1 TO-247 0.78 50 C/W C/W C Unit

Table 3.
Symbol IAS EAS

Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 9 290 Unit A mJ

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Electrical characteristics

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)

On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 100A VGS= 10V, ID= 4.5A 3 3.75 0.78 Min. 800 1 50
10

Typ.

Max.

Unit V A A nA V

4.5 0.9

Table 5.
Symbol gfs (1) Ciss Coss Crss

Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test condictions VDS =15V, ID = 4.5A Min. Typ. 9.6 2180 205 38 105 72 12.5 37 Max. Unit S pF pF pF pF nC nC nC

VDS =25V, f=1 MHz, VGS=0

Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge

VGS=0, VDS =0V to 640V VDD=640V, ID = 9A VGS =10V (see Figure 19)

1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS

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Electrical characteristics

Table 6.
Symbol td(on) tr td(off) tf

Switching times
Parameter Turn-on Delay Time Rise Time Test condictions VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 30 20 Max. Unit ns ns

Turn-off Delay Time Fall Time

65 17

ns ns

Table 7.
Symbol

Gate-source zener diode

Parameter Test condictions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V

BVGSO(1) Gate-Source Breakdown Voltage

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 8.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM

Source drain diode

Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, VGS=0 ISD=9A, di/dt = 100A/s, VDD=45V, Tj=150C 645 6.4 20 Test condictions Min Typ. Max 9 36 1.6 Unit A A V ns C A

1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%

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Electrical characteristics

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

2.1
Figure 1.

Electrical characteristics (curves)

Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3.

Safe operating area for TO-220FP

Figure 4.

Thermal impedance for TO-220FP

Figure 5.

Safe operating area for TO-247

Figure 6.

Thermal impedance for TO-247

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 7. Output characterisics Figure 8.

Electrical characteristics Transfer characteristics

Figure 9.

Transconductance

Figure 10. Static drain-source on resistance

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations

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Electrical characteristics Figure 13. Normalized gate threshold voltage vs temperature

STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 14. Normalized on resistance vs temperature

Figure 15. Source-drain diode forward characteristics

Figure 16. Normalized BVDSS vs temperature

Figure 17. Maximum avalanche energy vs temperature

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Test circuit

Test circuit
Figure 19. Gate charge test circuit

Figure 18. Switching times test circuit for resistive load

Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

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Package mechanical data

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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Package mechanical data

TO-220 MECHANICAL DATA

DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154

P
Q

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Package mechanical data

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

TO-220FP MECHANICAL DATA

mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7

L3 L6 L7
F1 F

G1 H
F2
L2 L5

E
1 2 3
L4

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Package mechanical data

TO-247 MECHANICAL DATA

mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620

DIM. A A1 b b1 b2 c D E e L L1 L2 P R S

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Revision history

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

Revision history
Table 9.
Date 08-Sep-2005 10-Mar-2006 28-Sep-2005

Document revision history

Revision 4 5 6 Complete document Inserted ecopack indication New template, no content change Changes

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