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Philips Semiconductors a worldwide company

Argentina: see South America


Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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Finland: Sinikalliontie 3, FIN-02630 ESPOO,
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Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy

Give range to

your ideas

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,


Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
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Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001

General Application
Products
2000 / 2001

Portugal: see Spain


Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553

For all other countries apply to: Philips Semiconductors,


Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825

Internet: http://www.semiconductors.philips.com

Philips Electronics N.V. 2000

SCB 70

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

Date of release: October

2000

Document order number:

For package information see inside

9397 750 07392

www.semiconductors.philips.com

ZA

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Subscribe to eNews at:

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SOT416/SC-75

SOT457/SC-74

SOT490/SC-89

SOT453

SOT477

Through-hole Leaded

Further information available

SOD27/DO-35

SOT54/TO-92

SOD66/DO-41

SOD68/DO-34

SOD70

SOT195

Package dimensions are not true to scale.

SOD81

&/:

Information on packages
Blister card
Transistor & Diode SMD Packages and Sensor SMD and Leaded Packages
Brochure
Discrete Packages 2000, packing quantities per package with relevant 12NC endings
Brochure
SC-89/SOT490 Super-small surface-mount package for transistors and diodes
Brochure
SOD110 High-performance ceramic package

Document order number


12NC 9397 750 04328
12NC 9397 750 05988
12NC 9397 750 04615
12NC 9397 750 05525

General Information
Internet
http://www.semiconductors.com/discretes
Intranet
http://pww.ga-products.hamburg.sc.philips.com/
Datahandbook
SC10 Small Signal Transistors and Diodes
CD-ROM
SC10 Small Signal Transistors and Diodes
Datahandbook
SC17 Semiconductor Sensors incl. CD-ROM
Image brochure
General Application Products - Your fundamental discretes choice

Document order number

12NC
12NC
12NC
12NC

9397
9397
9397
9397

750 06078
750 06085
750 03589
750 04253

GENERAL PURPOSE AMPLIFICATION AND SWITCHING TRANSISTORS

SMALL SIGNAL TRANSISTORS (BISS)

10

SWITCHING TRANSISTORS

12

HIGH-AMPLIFICATION DARLINGTON TRANSISTORS

14

HIGH-VOLTAGE TRANSISTORS

16

RESISTOR-EQUIPPED TRANSISTORS

18

HIGH-SPEED, SWITCHING AND GENERAL PURPOSE DIODES

20

SCHOTTKY-BARRIER DIODES

22

LOW-LEAKAGE CURRENT DIODES

24

ZENER DIODE FAMILIES

26

MAGNETORESISTIVE SENSORS

28

TEMPERATURE SENSORS

30

CROSS REFERENCE GUIDE

32

Philips Semiconductors General Purpose Amplification and Switching Transistors


GENERAL PURPOSE AMPLIFICATION AND SWITCHING TRANSISTORS-LOW POWER
IC

VCEO

max.

max.

(mA)

(V)

25
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
150
150
200
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500

20
20
25
30
30
30
30
30
30
30
30
30
32
32
32
32
32
40
40
40..50
40.50
40..50
45
45
45
45
45
45
45
45
45
45
45
45
45
45..50
45..50
50
50
50
60
60
65
65
65
65
65
65
65
50
50
20
25
25
25
45
45
45
45
45
50
50
60
60
60
80
80

hFE
min.

hFE
max.

fT

POLARITY

min.

LEADED
SOT54 / TO-92
SOT23
Ptot max. 500/625 mW Ptot max. 250 mW

* double transistors

SOT143
Ptot max. 250 mW

SOT346 / SC-59
Ptot max. 250 mW

SMD
SOT323 / SC-70
Ptot max. 200 mW

SOT363 / SC-88
Ptot max. 200 mW

SOT416 / SC-75
Ptot max. 150 mW

SOT490 / SC-89
Ptot max. 250 mW

PUMX1*
PUMZ1*
PUMT1*

2PC4617Q/R/S

2PC4617QJ/RJ/SJ

2PA1774Q/R/S
BC847AT
BC857AT

2PA1774QJ/RJ/SJ
BC847AF
BC857AF

BC847BT

BC847BF

BC857BT
BC847CT
BC857CT

BC857BF
BC847CF
BC857CF

(MHz)
48..105
125..223
450
75
200
125
220
350
420
420
110
100..220
110..420
120..215
180..380
180..380
200
100
100
120..270
120..270
120..270
110
125
110
125
120
120..380
120..380
200
200
200..220
420
420
500
160..290
160..290
200
135..200
250
110..200
120
110
125
110
125
200
200
220
120..350
120..200
150..410
100
106..333
132..333
100..250
100..250
100
100
160
85..170
85..170
50
50
160
50..100
50..100

75..210
190..475
>450
800
450
800
475
>350
800
800
200..800
100..800
220..800
260..500
310..630
310..630
450
300
300
270..560
270..560
270..560
220
250
800
800
260
220..630
220..630
450
450
475..500
800
800
1250
260..460
260..460
400
400..600
650
220..450
260
220
250
450
475
290
450
475
240..700
240..400
225..810
600
150..476
189..476
250..600
250..600
600
600
400
170..340
170..340
>50
>50
400
>50..100
>50..100

825 max.
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
180
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
60
100
150
100
100
100
100
100
100
100
100
100
100
100
80
80
100 max.
80
80
80
100
80
100
80
80
140..150
100..140
100
50
100
100
50

NPN
PNP
NPN
NPN/PNP
NPN
PNP
PNP
NPN
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
NPN
PNP
NPN
NPN/PNP
PNP
NPN
PNP
NPN
PNP
PNP
NPN
PNP
NPN
NPN/PNP
PNP
NPN
PNP
NPN
PNP
NPN
NPN
PNP
NPN
NPN
PNP
NPN
PNP
NPN
PNP
NPN
NPN
PNP
NPN
PNP
NPN
PNP
PNP
NPN
NPN
PNP
NPN
PNP
PNP
NPN
PNP
NPN
PNP
NPN
NPN
PNP

ED1502x
ED1602x
PMST5089
JC548B
JC559
JC558B
BC549C
BC559C

BC849B
BC859B
PMBT5088
BC849C
BC859C

BCV65*
BCV61B / BCV63B*

BC849BW
BC859W
BC859BW
PMST5088
BC849CW
BC859CW

BCV64B*
BCV61C*
BCV62C*
BCV61(A) / BCV63*
BCV62(A/B)*

BCW31/32/33
BCW29/30
BCW60B/C/D
BCW61B/C/D
BCF32
PMBS3904
PMBS3906
2PC4081Q/R/S

JC547A
BC547
BC557

BC557B
BC547C/BC550C
BC557C

2PA1576Q/R/S
BC847AW
BC857AW
BC847W
BC857W / BC860W

BC847A/BCW71
BC857A
BC847
BC857
BCW69
BCX70G/H/J/K
BCX71H/J/K
BC847B/BC850B/BCW72

BC847BW/BC850BW

BC857B/BC860B/BCW70
BC847C/BC850C
BC857C/BC860C
PMBT6429

BC857BW/BC860BW
BC847CW/BC850CW
BC857CW/BC860CW

BC847BS*
BC847BPN*
BC857BS*

PMST6429
2PB709AQ/R/S
2PD601AQ/R/S

2PC945P
2PA733P

BC546A
BC556A
BC546
BC556
JC546B
BC546B
BC556B/JC556B
2PC1815(Y/GR/BL)
2PA1015Y/GR
ED1402x

PMBT6428
BCV71/72
BCW89
BC846A
BC856A
BC846
BC856

PMST6428

BC846B
BC856B

BC846BW
BC856BW

BC846AW
BC856AW
BC846W
BC856W

BC846S

BC846AT
BC856AT

BC856S*
BC846BT
BC856BT

BCX18
ED1802x
ED1702x
BC337(-16/-25/-40)
BC327(-16/-25/-40)

BC817(-16/-25/-40)
BC807(-16/-25/-40)
BCX19
BCX17

BC817(-16/-25/-40)W
BC807(-16/-25/-40)W

JC327-25
2PD602AQ/R/S
2PB710AQ/R/S

JC337-25
MPSA06
MPSA56

PMBTA06
PMBTA56

2PD1820AQ/R/S
2PB1219AQ/R/S
PMSTA05
PMSTA55
PMSTA06
PMSTA56

www.semiconductors.philips.com

Philips Semiconductors General Purpose Amplification and Switching Transistors


GENERAL PURPOSE AMPLIFICATION AND SWITCHING TRANSISTORS-MEDIUM POWER
IC

VCEO

max.

max.

(mA)

(V)

1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1500
3000
3000
3000
5000
5000

20
20
45
45
60
60
60
60
80
80
80
80
80
20
45
45
10
10

hFE
min.

hFE

fT

max.

POLARITY

min.

LEADED
SOT54 / TO-92

SOT223 / SC-73

SMD
SOT89 / SC-62

Ptot max. 830 mW

Ptot max. 1300/1370 mW

Ptot max. 1100/2000 mW

BC368
BC369(-16/-25)
BC635(-16)
BC636(-10)
BC637(-16)
BC638(-16)

BCP68(-25)
BCP69(-16/-25)
BCP54(-16)
BCP51(-16)
BCP55(-10/-16)
BCP52-16
BSP41
BSP31
BCP56(-10/-16)
BCP53(-10/-16)
BSP43
BSP32/33

BC868(-25)
BC869(-16/-25)
BCX54(-10/-16)
BCX51(-10/-16)
BCX55(-10/-16)
BCX52(-10/-16)
BSR40/41
BSR30/31
BCX56(-10/-16)
BCX53(-10/-16)
BSR43
BSR33

(MHz)
85..160
85..160
40..100
40..100
40..100
40..100
40..100
40..100
40..100
40..100
40..100
40..100
40..100
85
40
40
180
200

> 160
> 160
160..250
160..250
160..250
160..250
120..300
120..300
160..250
160..250
120..300
120..300
160..250
375
>40
>40
>180
>200

40
40
130..250 typ.
50..115 typ.
100..130 typ.
50..100 typ.
100
100
100..250 typ.
50..115 typ.
100
100
50..160 typ.
130 typ.
60
60
100
100

NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
PNP
NPN
NPN
PNP
PNP
NPN

BC639(-10/-16)
BC640(-16)

BDP31
BDP32
BDL32
BDL31

MEDIUM-FREQUENCY TRANSISTORS
fT

VCEO

IC

min.

max.

max.

(MHz)

(V)

(mA)

hFE
min.

hFE

POLARITY

max.

150

40

25

67

220

NPN

260 typ.
325..350 typ.
380 typ.
400..450 typ.
450 typ.
490
550 typ.

20
40
40
30
20
15
25

30
25
25
25
25
100
25

65
50
76
25
40
40
38

225
>50
222
>25
>85
>40
>38

NPN
PNP
NPN
PNP
NPN
NPN
NPN

LEADED
SOT54 / TO-92

SOT23

Ptot max. 300/500 mW

Ptot max. 250 mW

SMD
SOT323 / SC-70
Ptot max. 200 mW

BF240

BF450
BF324
BF370
BF199

BFS19
BF550
BF840
BF824
BFS20
BF570

BF824W
BFS20W

www.semiconductors.philips.com

Philips Semiconductors Small Signal Transistors (BISS)


BREAKTHROUGH IN SMALL SIGNAL TRANSISTORS
VCEsat

VCEsat

@IC=500 mA @IC=1 A

VCEsat

VCEsat

IC

VCEO

@IC=2 A

@IC=5 A

max.

max.

(mV)

(mV)

(mV)

(mV)

(mA)

(V)

<90
<120
<90
<100
<90
<100
<250
<250
<300
<350
<500

120
170
170
180
170
180

150
160
290
300
290
300

355
375

5.000
5.000
3.000
3.000
3.000
3.000
500
500
1.000
1.000
1.000

40
40
50
50
50
50
15
15
40
40
40

500
500

Breakthrough In Small-Signal Transistors (BISS)


Offering very low power consumption and exceptionally high IC capability

NEW products are marked in red


hFE

min.

hFE
max.

fT

SOT223 / SC-73

SOT23

SMD
SOT457 / SC-74

SOT490 / SC-89

Ptot max. 1300/2000 mW

Ptot max. 250 mW

Ptot max. 600 mW

Ptot max. 250 mW

POLARITY

min.

Philips Semiconductors new BISS (Breakthrough In Small Signal) transistors, based on an innovative Mesh-Emitter
technology, are characterized by exceptionally low power consumption and high collector-current capability.
This makes them ideal for a host of battery powered applications in the professional and consumer areas.

(MHz)
250
250
200
200
200
200
90..200
90..200
300
300
160..300

450 typ.
450 typ.
> 200
> 200
> 200
> 200
900
900
800

80
80
100
100
100
100
100
100
150
150
150

NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
PNP

Continuous collector-current rating


increased by up to 200% in SC-74 package
and up to 66% increase in SOT223 package.
Power dissipation reduced by 30% in SC-74
and by up to 55% in SOT223 (under certain
operating conditions) Heat generation
reduced by around 50%

PBSS4540Z
PBSS5540Z
PBSS4350D
PBSS5350D

PBSS2515F
PBSS3515F

Applications
The exceptionally low power consumption of
these new transistors makes them ideal for a
host of battery powered applications in, for
example, the telecommunications segment and
handheld equipment.Their low dissipation plus
their high collector-current capability, moreover,
mean they also offer important advantages to the
automotive segment and household appliances
where low heat dissipation is often a critical
factor.

PMMT491A
PMMT591A
PBSS5140T

d
war

a
rs 2000
a
e
is y uct
f tho Prod
o
r
ne Ec
Win Best

Description
BISS (Breakthrough In Small Signal) transistors
are a new family of transistors from Philips
Semiconductors.The key feature of all BISS
transistors is their extremely low emittercollector saturation voltage (see below) which
in turn leads to low power consumption and
exceptionally high collector-current capability.

Technology
Philips new BISS transistors are based on a
innovative crystal layout called Mesh-Emitter
technology. Here the base is connected electrically through many small holes in the emitter
region causing the emitter area to effectively
spread mesh-like over virtually the whole active
area.This results in a comparatively large emitter
area and hence in a lower emitter-collector
resistance.

Advantages over conventional


small-signal transistors
Collector-emitter saturation voltage (VCEsat)
reduced by more than 50%.

Added value
To illustrate why these products are a real breakthrough, compare their performance with that of
conventional small-signal switching transistors:
Ic [DC] (A)

800

Philips Breakthrough in
Small Signal Transistors

VCEO (here: 40V)

55%

NPN

Ic (dc) [A]

800

+200%

NPN

PBSS5540Z

BDP32

PNP

PBSS4540Z

200

BDP31

BC869

BC868

PBSS4350D

Polarity Indicator
2 = npn (if ICmax < I A)
3 = pnp (if ICmax < I A)
4 = npn
5 = pnp
6 = npn (if ICmax > I0 A)
7 = pnp (if ICmax > I0 A)

PBSS5250D

400

PNP

Pc [mW] at Ic = 2A / Ib = 0,2 A

600

55%

NPN

NPN

PBSS5540Z

BDP32

PNP

PBSS4540Z

200

BDP31

PBSS5250D

PBSS4350D

400

Package
D = SOT457/SC-74
F = SOT490/SC-89
T = SOT23
U = SOT323/SC-70
X = SOT89
Z = SOT223
(Others to follow)

BC868

Icmax
(here: IA)

600

BC869

P B S S 4 I 4 0 U

+200%

Pc (mW) @ Ic = 2A / Ib = 0.2 A

PNP

-33%

Further information available

&/:

On BISS transistors
Brochure
Breakthrough In Small Signal Transistors (BISS)
Internet
http://www.semiconductors.com/catalog/219/282

Document order number


12NC 9397 750 06904

www.semiconductors.philips.com

10

11

Philips Semiconductors Switching Transistors


SWITCHING
IC

VCEO

max.

max.

(mA)

(V)

100
100
100
100..200
100..200
200
200
600
600
600
600
600
600
600
600
600
800
800

12
40
40
40
40
15
60
15
30
30
40
40
40
40
60
60
30
40

hFE

hFE

min.

fT

max.

40
100
100
100
100
40
50
40
100
100
30
75
100..150
100
50
100
30
40

120
300
300
300
300
120
>50
120
300
300
>30
>75
300
300
>50
300
>30
>40

toff

min.

max.

(MHz)

(ns)

500 typ.
180
150
300
250
500
200
500
250
250
200
300
250
200
200
200
250
300

30
990..1200
690..700
240
300
30
300
30
250
250
365
250
250..285
350..365
365
365
250
250

POLARITY

NPN
NPN
PNP
(2) NPN
PNP
NPN
PNP
NPN
NPN
NPN
PNP
NPN
NPN
PNP
PNP
PNP
NPN
NPN

LEADED
SOT54 / TO-92

SOT223 / SC-73

SOT89 / SC-62

SOT23

SMD
SOT457 / SC-74

SOT323 / SC-70

Ptot max. 500/830 mW

Ptot max. 1050/1150 mW

Ptot max. 250 mW

Ptot max. 1250 mW

Ptot max. 600 mW

Ptot max. 200 mW

BSV52
MPS3904
MPS3906
2N3904
2N3906
PH2369

PZT3904
PZT3906

PXT3904
PXT3906

PMBT3904 / BSR17A
PMBT3906 / BSR18A
PMBT2369

PMBT3904D

PMSS3904
PMSS3906
PMST3904
PMST3906
PMST2369
PMST2907A

PN2369A
PMST2222
PMBT2222
BSR15
PH2222A
PN2222A / 2N4401
2N4403

PZT2222A / PZT4401
PZT4403

PXT2222A / PXT4401
PXT4403

PH2907A / PN2907A

PZT2907A

PXT2907A

PMBT2222A / PMBT4401
PMBT4403 / PMBT2907
BSR16
PMBT2907A
BSR13
BSR14

PMST2222A / PMST4401
PMST4403

PROGRAMMABLE UNIJUNCTION TRANSISTORS AND CONTROLLED SWITCHES


VGA

IA(AV)

IARM

deA / dt

IP

IV

tr

max.

max.

max.

max.

max.

min.

max.

(V)

(mA)

(mA)

(A/s)

(A)

(A)

(ns)

70

175

2500

20

0.2

80

70

175

2500

0.25

15

1.4

REMARKS

Unijunction
Transistors
Controlled
Switch

LEADED
SOT54 / TO-92

SOT23

SMD
SOT143

Ptot max. 300 mW

Ptot max. 250 mW

Ptot max. 250 mW

BRY56A

BRY61
BRY62

www.semiconductors.philips.com

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13

Philips Semiconductors High-Amplification Darlington Transistors


DARLINGTON
IC

VCEO

max.

max.

(mA)

(V)

500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
800
1000
1000
1000
1000
1000
1000
1000
1000

30
30
30
30
30
30
30
45
45
60
60
60
60
60
80
80
55
45
45
45
80
60
60
80
80

hFE
min.

hFE
max.

fT

POLARITY

min.

LEADED
SOT54 / TO-92

SOT223 / SC-73

SMD
SOT89 / SC-62

SOT23

Ptot max. 500/830 mW

Ptot max. 1250 mW

Ptot max. 1300/1350 mW

Ptot max. 250 mW

(MHz)
5000
10000..20000
10000
20000
20000
30000
30000
2000
2000
2000
2000
10000
10000
10000
2000
2000
2000
1000
2000
2000
1000
1000
2000
2000
2000

>5000
>10000..20000
>10000
>20000
>20000
>30000
>30000
>2000
>2000
>2000
>2000
>10000
>10000
>10000
>2000
>2000
>2000
>1000
>2000
>2000
>1000
>1000
>2000
>2000
>2000

125
125
125
220 typ.
220 typ.
220 typ.
220 typ.
200 typ.
200 typ.
200 typ.
200 typ.
125
220 typ.
220 typ.
200 typ.
200 typ.
155
200 typ.
200 typ.
200 typ.
200 typ.
200 typ.
200 typ.
200 typ.
200 typ.

NPN
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
NPN
PNP
NPN
PNP
NPN
NPN
NPN
PNP
NPN
PNP
NPN
NPN
PNP

MPSA14
MPSA64

PZTA14

PXTA14
BCV29
BCV28

PMBTA13
PMBTA14
PMBTA64
BCV27
BCV26

BC517
BC516

BSP61

BST50
BST60
BST51
BST61

BSP62

BCV49
BCV48
BST52
BST62

BSP60

MPSA27
BCV47
BCV46

BC618
BC875
BSP50
BC879
BC878
BSP51
BSR52
BSR62

www.semiconductors.philips.com

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