IRF840

IRF840
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specied January 2002

Data Sheet

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

Features

8A, 500V

rDS(ON) = 0.850

Single Pulse Avalanche Energy Rated

SOA is Power Dissipation Limited

IRF840 500 500 8.0 5.1 32 20 125 1.0 510 -55 to 150 300 260

UNITS V V A A A V W W/oC mJ oC
oC oC

Nanosecond Switching Speeds

Linear Transfer Characteristics

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
NOTE: 1. TJ = 25oC to 125oC.

High Input Impedance

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

Formerly developmental type TA17425.

Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PARAMETER
D

Symbol
SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg(TOT) Qgs Qgd Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance CISS COSS CRSS LD Drain to Source Breakdown Voltage Gate to Threshold Voltage
G

Electrical Specications

TC = 25oC, Unless Otherwise Specied TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V VGS = 10V, ID = 4.4A (Figures 8, 9) VDS 50V, ID = 4.4A (Figure 12) VDD = 250V, ID 8A, RG = 9.1, RL = 30 MOSFET Switching Times are Essentially Independent of Operating Temperature. MIN 500 2.0 8.0 4.9 TYP 0.8 7.4 15 21 50 20 42 7.0 22 MAX 4.0 25 250 100 0.85 21 35 74 30 63 UNITS V V A A A nA S ns ns ns ns nC nC nC

PART NUMBER

PACKAGE

BRAND

IRF840 Zero-Gate Voltage Drain Current

S

TO-220AB

IRF840

NOTE:

When ordering, include the entire part number.

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge

Packaging

JEDEC TO-220AB TOP VIEW

SOURCE DRAIN GATE

VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

DRAIN (FLANGE)

Measured from the Contact Screw on Tab to Center of Die -

1225 200 85 3.5

pF pF pF nH

Modified MOSFET Symbol Showing the Internal Devices Measured from the Drain Inductances D Lead, 6mm (0.25in) from Package to Center of Die LD Internal Source Inductance LS
G LS S

4.5

nH

Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation

7.5

nH

1.0 62.5

oC/W oC/W

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B

IRF840 Rev. B

IRF840 Typical Performance Curves

Unless Otherwise Specied
15 VGS = 10V 10s 12 VGS = 6.0V 10 100s 9 VGS = 5.5V 6 VGS = 5.0V VGS = 4.5V 0 0 50 100 150 200 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 102 103 VGS = 4.0V 1ms 1 10ms 3 DC

IRF840
(Continued)

Source to Drain Diode Specications

MIN
D

PARAMETER G

SYMBOL 32 A 8.0 A
102

TEST CONDITIONS

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

Pulse Source to Drain Current (Note 3)

ISDM

Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode

Source to Drain Diode Voltage (Note 2) 210 2.0 C

0.1 1

VSD 475 4.6 8.2 970 ns 2.0 V

TJ = 25oC, ISD = 8.0A, VGS = 100A/s (Figure 13)

OPERATION IN THIS REGION IS LIMITED BY rDS(ON)

ID, DRAIN CURRENT (A)

Reverse Recovered Charge

QRR

TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/s

NOTES:

TC = 25oC TJ = MAX RATED SINGLE PULSE

2. Pulse Test: Pulse width 300s, duty cycle 2%.

ID , DRAIN CURRENT (A)

Reverse Recovery Time

trr

TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/s

250

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25, peak IAS = 8A.

FIGURE 5. OUTPUT CHARACTERISTICS

Typical Performance Curves

15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 12 VGS = 6.0V VGS = 10V

Unless Otherwise Specied

100

1.2

10

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V 10

1.0 9

0.8

6 6

1 VGS = 5.5V TJ = 150oC VGS = 5.0V 0.1 VGS = 4.5V 15 0.01 0 10 TJ = 25oC

0.6

4 3

ID , DRAIN CURRENT (A)

ID , DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

0.2 0 0 50 125 TC , CASE TEMPERATURE (oC) 75 100 150

VGS = 4.0V

50

100

150

25

3 6 9 12 VDS , DRAIN TO SOURCE VOLTAGE (V)

ISD(ON), DRAIN TO SOURCE CURRENT (A)

0.4

2 4 6 8 VSD , GATE TO SOURCE VOLTAGE (V)

TC , CASE TEMPERATURE (oC)

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

10

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 8 3.0

0.5

2.4

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 4.4A, VGS = 10V

0.2

0.1 PDM

0.1 0.05

6 VGS = 10V 4

1.8

0.02 0.01 t1 t2 t2

1.2

THERMAL IMPEDANCE

rDS(ON) , DRAIN TO SOURCE ON RESISTANCE ()

10-2

SINGLE PULSE

ZJC , NORMALIZED TRANSIENT

10-3 -5 10 1

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10

0 0 8 40 16 24 32 TC , CASE TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE 2 VGS = 20V

0.6

0 -60

-40

-20

20

40

60

80

100 120 140 160 TJ , JUNCTION TEMPERATURE (oC)

10-4

10-3 10-2 0.1 t1 , RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B

IRF840 Rev. B

IRF840

Typical Performance Curves

Unless Otherwise Specied

(Continued)

1.25

ID = 250A VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD

3000

1.15

2400

1.05 CISS

1800

0.95 COSS CRSS

NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

0.85

C, CAPACITANCE (pF)

1200

600

0.75 -60 1 2 102 5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V)

-40

-20

20

40

60

80

100 120 140 160

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

15 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

12

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

100

9 TJ = 150oC TJ = 25oC

TJ = 25oC

10

TJ = 150oC

1.0

gfs, TRANSCONDUCTANCE (S)

ISD, SOURCE TO DRAIN CURRENT (A)

0 0.3 0.6 0.9 1.2 VSD , SOURCE TO DRAIN VOLTAGE (V) 1.5

0.1

6 9 ID , DRAIN CURRENT (A)

12

15

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 8A

16

VDS = 100V

12 VDS = 400V

VDS = 250V

VGS , GATE TO SOURCE VOLTAGE (V)

0 48 60

12

24

36

Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B