TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor

October 2008

TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107

Equivalent Circuit C

TO-220
R1 R2 E

1.Base

2.Collector

3.Emitter

R1 @ 10k W R2 @ 0.6kW

Absolute Maximum Ratings*

Symbol VCBO Collector-Base Voltage

T a = 25C unless otherwise noted

Parameter : TIP100 : TIP101 : TIP102

Ratings 60 80 100 60 80 100 5 8 15 1 2 80 150 - 65 ~ 150

Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 1

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TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor

Electrical Characteristics* Ta=25C unless otherwise noted

Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP100 : TIP101 : TIP102 Collector Cut-off Current : TIP100 : TIP101 : TIP102 Collector Cut-off Current : TIP100 : TIP101 : TIP102 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 3A VCE = 4V, IC = 8A IC = 3A, IB = 6mA IC = 8A, IB = 80mA VCE = 4V, IC = 8A VCB = 10V, IE = 0, f = 0.1MHz 1000 200 50 50 50 2 20000 2 2.5 2.8 200 V V V pF mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 50 50 50 mA mA mA Test Condition IC = 30mA, IB = 0 Min. 60 80 100 Typ. Max. Units V V V

ICEO

ICBO

IEBO hFE VCE(sat) VBE(on) Cob

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 2

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TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor

Typical Characteristics

IB = 1mA

IC[A], COLLECTOR CURRENT

0.9mA 0.8mA

mA A 700 600m
A 400m

10k

A 500m

VCE = 4V

IB = 300mA IB = 200mA

hFE, DC CURRENT GAIN

1k

IB = 100mA
0 0 1 2 3 4 5
100 0.1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10k

10k

IC = 500 IB
1k

VBE(sat)
1k

Cob[pF], CAPACITANCE

100

VCE(sat)

10

100 0.1

10

100

1 0.1

10

100

IC[A], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

100

120

IC[A], COLLECTOR CURRENT

10

PC[W], POWER DISSIPATION

1ms
s 0m 10

100

80

DC
1

s 5m

60

40

0.1

TIP100 TIP101 TIP102

20

0.01 0.1

0
1 10 100

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 3

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TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor

Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. 1.0.0 4

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TIP100/TIP101/TIP102 TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2008 Fairchild Semiconductor Corporation TIP100/TIP101/TIP102 Rev. A1 5

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