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by 2N3715/D

SEMICONDUCTOR TECHNICAL DATA




    

. . . designed for mediumspeed switching and amplifier applications. These devices
feature:

Total Switching Time at 3 A typically 1.15 s

Gain Ranges Specified at 1 A and 3 A
Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A
Excellent Safe Operating Areas
Complement to 2N379192

10 AMPERE
POWER TRANSISTORS
SILICON NPN
60 80 VOLTS
150 WATTS

CASE 107
TO204AA
(TO3)

MAXIMUM RATINGS

Rating

Symbol

2N3715

2N3716

Unit

VCEO

60

80

Volts

CollectorBase Voltage

VCB

80

100

Volts

EmitterBase Voltage

VEB

7.0

7.0

Volts

Collector Current

IC

10

10

Amps

Base Current

IB

4.0

4.0

Amps

Power Dissipation

PD

150

150

Watts

Thermal Resistance

JC

1.17

1.17

_C/W

CollectorEmitter Voltage

Operating Junction and Storage Temperature Range

TJ, Tstg

65 to + 200

_C

PD, POWER DISSIPATION (WATTS)

160
140

120
100
80
60
40
20
0

25

50
75
100
125
150
TC, CASE TEMPERATURE (C)

175

200

Figure 1. PowerTemperature Derating Curve

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.
REV 7

312
Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data





v
v

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

EmitterBase Cutoff Current

(VEB = 7.0 Vdc)

Symbol

Min

Max

Unit

IEBO

5.0

mAdc

1.0
1.0
10
10

60
80

50
30

150

VCE(sat)*

0.8

Vdc

VBE(sat)*

1.5

Vdc

VBE*

1.5

Vdc

hfe

4.0

All Types

CollectorEmitter Cutoff Current

(VCE = 80 Vdc, VBE = 1.5 Vdc)
(VCE = 100 Vdc, VBE = 1.5 Vdc)
(VCE = 60 Vdc, VBE = 1.5 Vdc, TC = 150_C)
(VCE = 80 Vdc, VBE = 1.5 Vdc, TC = 150_C)

ICEX

mAdc

2N3715
2N3716
2N3715
2N3716

CollectorEmitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

VCEO(sus)*

Vdc

2N3715
2N3716

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)

2N3715, 2N3716
2N3715, 2N3716

hFE*

CollectorEmitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc)

2N3715, 2N3716

BaseEmitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc)

2N3715, 2N3716

BaseEmitter Voltage (1)

(IC = 3.0 Adc, VCE = 2.0 Vdc)

All Types

Small Signal Current Gain

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)

All Types

Switching Times (Figure 2)

(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)

Rise Time
Storage Time
Fall Time

(1) Pulse Test: Pulse Width

Typ

300 s, Duty Cycle

tr
ts
tf

0.45
0.3
0.4

2.0%.

TEST CIRCUIT
1.5

+11.5 V

WAVE SHAPE
AT POINT A

ts

1.0
SWITCHING TIMES ( s)

IC = 5 A, IB1 = IB2 = 0.5 A

f 150 cps DUTY CYCLE 2%

ton ~ 30 s

9 V

0.7
0.5

tf

0.3

tr

toff
~ 1.7 ms
100
1W

0.2

+ 30 V

~ 4.8 ms

20
1W

0.2

900

900

Hg RELAYS
IB1 = IB2
0.1
0.1

6
4W

100
0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (AMPS)

3.0

5.0

+ 62 V

9 V

100 4 V

Figure 2. Typical Switching Times

Motorola Bipolar Power Transistor Device Data

313

10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2

1000
700
500
300
200

2N3715, 2N3716

TJ = 175C

0.1
0.07
0.05
0.03
0.02

IB , BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMPS)

 

VCE = 2 V
SEE NOTES 1, 2

40C

100
70
50
30
20

0.5

1.0 2.0

5.0 10 20

50

100 200

TJ = 175C

40C

10
7.0
5.0
3.0
2.0

25C

0.01
0.1 0.2

VCE = 2 V
SEE NOTE 2

1.0

500 1000

25C

0.4

0.8

1.2

1.6

VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 3. Collector Current versus Base Current

Figure 4. Base CurrentVoltage Variations

IC, COLLECTOR CURRENT (AMPS)

IB, BASE CURRENT (mA)

10
7
5

2N3715, 2N3716

3
2
TJ = 175C

1
0.7
0.5

40C

VCE = 2 V
SEE NOTE 2

25C

0.3
0.2
0.1
0.1

0.4

0.8

1.2

1.6

2.0

VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 5. Collector CurrentVoltage Variations

NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C.
NOTE 2. Pulse test: pulse width 200 sec, duty cycle 1.5%.

314

Motorola Bipolar Power Transistor Device Data

2.0

VCE(sat) , COLLECTOREMITTER SATURATION

VOLTAGE (VOLTS)

 
1.4
TJ =
25C
40C
175C
SEE NOTE 2

1.2
1.0
0.8

IC = 5 A

0.6
0.4

IC = 3 A

0.2
0.1

IC = 1 A
20

10

30

50

70

100
200
IB, BASE CURRENT (mA)

300

500

700

1000

2000

Figure 6. CollectorEmitter Saturation Voltage Variations

VBE(sat) , BASEEMITTER SATURATION

VOLTAGE (VOLTS)

1.4
IC = 5 A

1.2
IC = 3 A

1.0
0.8

IC = 1 A

0.6
TJ =
25C
40C
175C
SEE NOTE 2

0.4
0.2
0.1

20

10

30

50

70

100
200
IB, BASE CURRENT (mA)

300

500

700

1000

2000

Figure 7. BaseEmitter Saturation Voltage Variations

100

5.0
3.0
2.0
1.0
0.7
0.5

VCE = VCEO 20 V
SEE NOTE 2

TJ = 175C

0.3
0.2
0.1
0.6

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

10
7.0

TJ = 100C
REVERSE
0.4

0.2

FORWARD
0.2

0.4

50
30
20
10
5.0
3.0
2.0
1.0

TJ = 175C

0.5
0.3
0.2
0.1

VCE = VCEO 20 V
SEE NOTE 2

TJ = 100C
1

10

100

1000

10,000

100,000

VBE, BASEEMITTER VOLTAGE (VOLTS)

RBE, EXTERNAL BASEEMITTER RESISTANCE (OHMS)

Figure 8. Collector Current versus

BaseEmitter Voltage

Figure 9. Collector Current versus

BaseEmitter Resistance

Motorola Bipolar Power Transistor Device Data

315

 

hFE , CURRENT GAIN

200
TJ = 175C

hFE

150

40C

50

0
0.01

VCE = 2 V

25C

100

+ IBIC ) ICBO
ICBO

0.02

0.03

0.05

0.07

0.1

0.2
0.3
0.5
0.7
IC, COLLECTOR CURRENT (AMPS)

1.0

2.0

3.0

5.0

7.0

10

f , CURRENT GAIN BANDWIDTH PRODUCT (mc)

Figure 10. Current Gain Variations

VCE = 6 V

0
0.1

0.2

0.3

0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMPS)

2.0

3.0

5.0

Figure 11. Current Gain Bandwidth Product versus Collector Current

10
7
5

DC to 5 ms

50 s

500 s

3
2

1 ms

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

SAFE OPERATING AREAS

250 s

1
0.7
0.5
0.3
0.2
0.1

10
20
30
40
50
60
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

70

Figure 12. 2N3715

The Safe Operating Area Curves indicate IC VCE limits
below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within
the applicable Safe Area to avoid causing a collectoremitter

316

10
7
5

50 s

DC to 5 ms

250 s
500 s

3
2

1 ms

1
0.7
0.5
0.3
0.2
0.1

10

80
20
30
40
50
60
70
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

90

Figure 13. 2N3716

short. (Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation below the
maximum TJ, the powertemperature derating curve must be
observed for both steady state and pulse power conditions.

Motorola Bipolar Power Transistor Device Data

 
PACKAGE DIMENSIONS

A
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

C
T
E
D

2 PL

0.13 (0.005)
U

T Q

SEATING
PLANE

T Y

Q
0.13 (0.005)

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

INCHES
MIN
MAX
1.550 REF

1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC

0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF

26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC

21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 107
TO204AA (TO3)
ISSUE Z

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Motorola Bipolar Power Transistor

Device Data

*2N3715/D*

317
2N3715/D

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