EE1301 Power Electronics Two marks questions and answers Unit I Power Semiconductor Devices 1.

. Define power electronics Power electronics may be defined as applications of solid state electronics for the control and conversion of electric power 2. What are the different thyristor family devices? SCR, TRIAC, DIAC, SUS, SCS, LASCR, LASCS and PUT 3. Define SCR SCR is a four layer, three junction, three terminal, unidirectional device. 4. Draw the VI characteristics of SCR Refer class notes 5. Define latching current Latching current is the minimum anode current required to maintain the thyristor in the on state immediately after a thyristor has been turned on and the gate signal is removed. 6. Define holding current Holding current is the minimum value of anode current below which it must fall for turning off the thyristor 7. What are the different turn-on methods? 1. Temperature triggering 2. Light triggering 3. Forward voltage triggering 4. dv/dt triggering 5. Gate triggering 8. Define turn-on time. It is defined as the time during which SCR changes from forward blocking state to forward conduction state. 9. What are the different turn-on time intervals? 1.Delay time-time during which anode current rises from forward leakage current to 0.1 Ia. 2. rise time - time during which anode current rises from 0.1 Ia to 0.9 Ia 3.spread time - time during which anode current rises from 0.9 Ia to Ia. Where Ia is the maximum anode current 10. Define delay time Time during which anode current rises from forward leakage current to 0.1 Ia or time during which anode voltage falls from Va to 0.9Va 11. Define rise time Time during which anode current rises from 0.1 Ia to 0.9 Ia or time during which anode voltage falls from 0.9Va to 0.1Va

12. Define spread time Time during which anode current rises from 0.9 Ia to Ia or time during which anode voltage falls from 0.1Va to on state voltage drop (1 to 1.5V) 13. Define turn-off process of SCR Dynamic process of SCR from forward conduction state to forward blocking state is called commutation process or turn off process. 14. Define turn-off time It is defined as time between the instant anode current becomes zero and the instant SCR regains forward blocking capability. 15. What are the different turn-off time intervals? Turn-off time is divided into two intervals: Reverse recovery time: During this time, stored charges in the outer layers are removed. Gate recovery time: During this time, stored charges in the inner layers are removed by recombination. 16. What are the difference between SCR and TRIAC? SCR- unidirectional and high power device TRIAC bidirectional and low and medium power device 17. What are the modes of operation of TRIAC? and which mode TRIAC is more sensitive? Mode1: MT2 is positive and Ig is positive with respect to MT1 Mode2: MT2 is positive and Ig is negative with respect to MT1 Mode3: MT2 is negative and Ig is positive with respect to MT1 Mode4: MT2 is negative and Ig is negative with respect to MT1 Sensitivity of the TRIAC is greatest in the first quadrant when turned on with positive gate current (mode1) and also in third quadrant when turned on with negative gate current (mode4). 18. What are different power transistor family devices? BJT, MOSFET, SIT and IGBT 19. What are the differences between transistor and thyristor family devices? Power transistors have controlled turn-on and turn-off characteristics Switching speed of power transistor is high Voltage and current ratings are lower than that of thyristors On state voltage drop (0.3 to 0.8V) is lower than thyristors (1 to 1.5V) 20. What are the different types of power MOSFET? 1. Depletion type power MOSFET 2. Enhancement type power MOSFET 21.What are the difference between BJT and power MOSFET? BJT- current controlled device, secondary breakdown occurs and higher switching losses and lower conduction losses. MOSFET- voltage controlled device, no secondary breakdown problem and lower switching losses and higher conduction losses. 22. Draw the V-I characteristics of TRIAC Refer class notes

23. Draw the transfer and output characteristics of BJT Refer class notes 24. What are the properties of IGBT? IGBT has high input impedance like MOSFET and low on state power loss like BJT. It is free from secondary breakdown problem. Voltage and current ratings are higher than MOSFET. Switching frequency is higher than BJT and lower than MOSFET. 25. Define trans conductance In BJT, it is defined as the ratio between small change in collector current to small change in base emitter voltage I C gm = V BE In MOSFET, it is defined as the ratio between small change in drain current to small change in gate source voltage I D gm = VGS 26. Draw the transfer and output characteristics of MOSFET Refer class notes 27. Draw the transfer and output characteristics of IGBT Refer class notes 28. What is the purpose of driver circuit in power MOSFET? Driver circuits are designed to provide the necessary control signal for power MOSFET. 29. What are the purposes of using snubber circuit? * To limit the stress on power semiconductor switching devices during switching transitions. * Used for dv/dt protection In snubber circuit, capacitor and resistor series combination is connected in parallel with the switching device. 30. Distinguish between holding current and latching current of SCR Latching current is the minimum anode current required to maintain the thyristor in the on state immediately after a thyristor has been turned on and the gate signal is removed Holding current is the minimum anode current required to maintain the thyristor in the ON state. Holding current is less than latching current. Latching current is related with turn-on process and holding current is related with turn-off process. Latching current is two to three times holding current. 31. What are the basic features of power MOSFET? Voltage controlled device, operating frequency is high, lower switching losses and higher conduction losses, temperature co-efficient is negative, parallel operation is easy and secondary breakdown does not occur. 32. What is meant by secondary breakdown in power BJTs? Secondary breakdown is the breakdown of the junction due to localized heating effects. If high voltage and high current occur simultaneously during turn-off, a hot spot is formed and the device fails by thermal runaway.