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  • D2581 (Nte2353)

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    Edgar Rodriguez
    198 visualizzazioni2 pagine
    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a fast transition time of 100 nanoseconds, a high breakdown voltage rating of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents up to 10A and peak currents up to 30A, and has a maximum power dissipation of 70W. It also provides typical values for various electrical parameters like saturation voltages, current gain, and fall time.

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    D2581 (nte2353)

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    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a fast transition time of 100 nanoseconds, a high breakdown voltage rating of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents up to 10A and peak currents up to 30A, and has a maximum power dissipation of 70W. It also provides typical values for various electrical parameters like saturation voltages, current gain, and fall time.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Scarica in formato PDF, TXT o leggi online su Scribd
    Segnala contenuti inappropriati
    198 visualizzazioni2 pagine

    D2581 (Nte2353)

    Caricato da

    Edgar Rodriguez
    This document contains specifications for an NPN silicon transistor intended for use in horizontal deflection output circuits in TVs. It has a fast transition time of 100 nanoseconds, a high breakdown voltage rating of 1500V, and an on-chip damper diode. The transistor can handle continuous collector currents up to 10A and peak currents up to 30A, and has a maximum power dissipation of 70W. It also provides typical values for various electrical parameters like saturation voltages, current gain, and fall time.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Scarica in formato PDF, TXT o leggi online su Scribd
    Segnala contenuti inappropriati
    di 2

    NTE2353

    Silicon NPN Transistor


    TV Horizontal Deflection Output
    w/Damper Diode
    Features:
    D High Speed: tf = 100nsec
    D High Breakdown Voltage: VCBO = 1500V
    D OnChip Damper Diode
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
    Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
    Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    Collector Cutoff Current

    Collector Sustain Voltage


    Emitter Cutoff Current

    Symbol

    Test Conditions

    Min

    Typ

    Max Unit

    ICES

    VCE = 1500V

    1.0

    mA

    ICBO

    VCB = 800V

    10

    800

    40

    130

    mA

    VCEO(sus) IC = 100mA, IB = 0
    IEBO

    VEB = 4V

    Collector Emitter Saturation Voltage

    VCE(sat)

    IC = 8A, IB = 1.6A

    Base Emitter Saturation Voltage

    VBE(sat)

    IC = 8A, IB = 1.6A

    1.5

    hFE1

    VCE = 5V, IC = 1A

    hFE2

    VCE = 5V, IC = 8A

    10

    IEC = 10A

    2.0

    IC = 6A, IB1 = 1.2A, IB2 = 2.4A

    0.1

    0.3

    DC Current Gain

    Diode Forward Voltage


    FallTime

    VF
    tf

    .134 (3.4) Dia

    .221 (5.6)
    .123 (3.1)

    .630 (16.0)

    .315
    (8.0)
    .866
    (22.0)

    .158 (4.0)

    .804
    (20.4)

    .215 (5.45)

    .040 (1.0)

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