TOSHIBA 2S$€2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2$C2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm. © Specified 12.5V, 28MHz Characteristics © Output Power Po=60Wppp (Min.) © Power Gain 1.84B (Min, © Collector Bificieney 5% (Min.) © Intermodulation Distortion 3048 (Max.) p-ase MAXIMUM RATINGS (Te=25%) 3 CHARACTERISTIC SvapoL] RaTING Jum ]| Collector Base Voltage Vono [Vv | Collector-Emitier Voltage VcES [Vv wal??? Collector-Emitier Voltage Voro. 13 |v Emitter-Base Vollage VEBO. av 1 ewurter Collector Current 1c 20 [A 2. BASE Cal ecoe Pon biSspaon & ew & ewrren Junction Temperature °C ‘Storage Temperature Range sg |PEDEC = EIA = TOSHIBA 2-19BiA, ELECTRICAL CHARACTERISTICS (Te=25°) Weight : 52g CHARACTERISTIC SYMBOL] TEST CONDITION | MIN. | TYP. |MAX.]UNIT Collector-Bmitter Breakdown Voliage |V (ami GEO! BLS Ly Collector-Emitter Breakdown Voltage [V (BR) CE’ 45, — |— |v Emitter-Base Breakdown Voltage _|V (pp) BpOl 4[—[—- [Vv DC Current Gain BEE io — [180 — 2.BV, Ig=0 Collector Output Capacitance Coy [YORE — | = | 500] pr Power Gain op =125V, f=28.000| 18 | 13.8| — | aB Input Power Pi | MH, fy = [| 25| 4 |Wpep| Collector Eificiency 71g [late 3{—|[—|% Intermodulation Distortion IMD__|Po=60Wpep (Fig) = = [330 ae series Equivalent Input imptaawe | tin |Veo=226V, 2600 — [2] — | a Mil, f=28.001MHz oat Series Equivalent Output Impedance | Zour _[Po=60WpEP — Lg] - [2 * Pulse Test : Pulse Width 100s, Duty Cycle=3% CAUTION Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not ically. Dispose of this product properly according to law. Do not break, cut, crush or dissolve cher intermingle with normal industrial or domestic waste. @TOEA & oopnaly wornng 1p, pe He aay ‘TOG orc 49 obverve andar of ster. and to avolgstupvonr whch 2 matoncton gr alure Bf 9 TOSHIGA product cul aur fst of humar ite bodily nano damage to prope in develop TOS4UR semtondacor Relay Handbook rd he relay oF % prafuns,Neverhelen, emiconsucy caves genera ‘attuncion Sraltaue f°tnl mara cleat Senet and wlaersily Yo physica areas N's te iporainy of tne buyer, whe ul Your, Sesgr, plese eraure that TOSHIBA’ proses are eed win apace aerating ranges set fat inthe mas tone products Spechclons. Ase, ieae Keep mind the precavidns and condos St forth in the sonsena2 "3 T998-07-17__1/2TOSHIBA 25C€2290 Fig. Pi TEST CIRCUIT C4,C2,C4,C7_:_7~150pF Ly: g0.8ENAMEL COATED COPPER WIRE, SID, 6T 3 : 250pF Ig: $1 SILVER PLATED COPPER WIRE, 91D, 2T C5 2 O4uF Lg __: $1.5 ENAMEL COATED COPPER WIRE, SID, 5T C6 + 100,F10WV RFC, : $0.8ENAMEL COATED COPPER WIRE, SID, 207 Cg 2 150pF RFC. : $1.5ENAMEL COATED COPPER WIRE, 12D, 15T 9 : 10~200pF Ry: 5.600/2W) Cio: 600pF Rg: SQW) Cu: O4uF Rg: 1.5900W) 12,013 + 22uF 35WV C14: *1000pF (FEED THROUGH) Po - Pi IMD ~ Po 129 a1 ‘y=2600 . 4 fpa2nonratte i z Yoo 125 = # : 32 5 « 2-0 E fpeanonte i 8 Nooeisev E J tae 0mA woe iY ? 7 3 i) wo wo we INPUT POWER FL (Woe) OUTPUT POWER. Po (Weep) CAUTION ‘These are only typical curves and devices are not necessarily guaranteed at these curves. Impicavon or ottdaae Gas oy intlestus! propery br other ngs of TOSHIBn COMORATION o hers © ihe ormaey contaned hereh & preted ony 1 8 gule_for te sppleatons of our podice, No reippnabiy & Sead by. TOs CORPORATION fo ey nfrogemens of tlecualfropery"o" ater gh af we td Barts frncn may reat Tom tus. No hearse 8 gfeme @ ihe'inormation contained herein f subject to change without nonce, T998-07-17_2/2