PD - 9.

1436B

PRELIMINARY
l l l l l

IRF7314
HEXFET Power MOSFET
8 7

Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated

S1 G1 S2 G2

D1 D1 D2 D2

VDSS = -20V

RDS(on) = 0.058

T op V iew

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

S O -8

Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted)

Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG

Maximum
-20 12 -5.3 -4.3 -21 -2.5 2.0 1.3 150 -2.9 0.20 -5.0 -55 to + 150

Units
V

Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range

W mJ A mJ V/ ns C

Thermal Resistance Ratings

Parameter
Maximum Junction-to-Ambient

Symbol
RJA

Limit
62.5

Units
C/W 11/18/97

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 -0.70 Typ. Max. Units Conditions V VGS = 0V, ID = -250A 0.031 V/C Reference to 25C, ID = -1mA 0.049 0.058 VGS = -4.5V, ID = -2.9A 0.082 0.098 VGS = -2.7V, ID = -1.5A V VDS = VGS, ID = -250A 5.9 S VDS = -10V, ID = -1.5A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 55C 100 VGS = -12V nA -100 VGS = 12V 19 29 ID = -2.9A 4.0 6.1 nC VDS = -16V 7.7 12 VGS = -4.5V, See Fig. 10 15 22 VDD = -10V 40 60 ID = -2.9A ns 42 63 RG = 6.0 49 73 RD = 3.4 780 VGS = 0V 470 pF VDS = -15V 240 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Qrr

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge

Min. Typ. Max. Units -2.5 A -21 V ns nC -0.78 -1.0 47 71 49 73

Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, IS = -2.9A, VGS = 0V TJ = 25C, IF = -2.9A di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

I -2.9A, di/dt -77A/s, VDD V(BR)DSS, SD

TJ 150C

Starting TJ = 25C, L = 35mH

RG = 25, IAS = -2.9A.

Pulse width 300s; duty cycle 2%.

Surface mounted on FR-4 board, t 10sec.

IRF7314
100
VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP

100

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V TOP

10

10

-1.50V
1

-1.50V

0.1 0.1

20s PULSE WIDTH TJ = 25 C

1 10

0.1 0.1

20s PULSE WIDTH TJ = 150 C

1 10

-VDS , Drain-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

100

-I D , Drain-to-Source Current (A)

TJ = 25 C TJ = 150 C
10

-ISD , Reverse Drain Current (A)

TJ = 150 C
10

TJ = 25 C
1

1 1.5

V DS = -10V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.1 0.2

V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4

-VGS , Gate-to-Source Voltage (V)

-VSD ,Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode Forward Voltage

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R DS(on) , Drain-to-Source On Resistance ( )
2.0

R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)

I D = -2.9A

0.8

1.5

0.6

V G S = -2.7V

1.0

0.4

0.5

0.2

V G S = -4.5V
0.0 0 4 8 12 16 20

0.0 -60 -40 -20 0 20 40 60 80

V G S = -4.5V
100 120

140 160

T J , Junction T em perature (C )

-I D , Drain Current (A)

Fig 5. Normalized On-Resistance Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain Current

R DS(on) , Drain-to-Source On Resistance ( )

0.08

400

EAS , Single Pulse Avalanche Energy (mJ)

0.07

ID -1.3A -2.3A BOTTOM -2.9A TOP

300

0.06

200

I D = -5.3A
0.05

100

0.04

0.03 0.0 2.0 4.0 6.0 8.0

0 25 50 75 100 125 150

V G S , Gate-to-Source Voltage (V)

Starting TJ , Junction Temperature ( C)

Fig 7. Typical On-Resistance Vs. Gate Voltage

Fig 8. Maximum Avalanche Energy Vs. Drain Current

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1400

1200

-V G S , Gate-to-Source Voltage (V)

V GS C is s C rs s C oss

= = = =

0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd

10

I D = -2.9A V D S = -16V

C , C apacitanc e (pF )

1000

C is s C os s

800

600

400

C rs s

200

0 1 10 100

0 0 5 10 15 20 25 30

-VD S , D rain-to-S ource V oltage (V )

Q G , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

100

Thermal Response (Z thJA )

0.50

0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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Package Outline
SO8 Outline

D -B-

DIM
5

INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157

MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99

A
6 5 H 0.25 (.010) M A M

8 E -A-

A1 B C D E

e 6X

K x 45 e1 A

e e1 H K L

.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8

0.10 (.004) 6 C 8X

-CB 8X 0.25 (.010) NOTES: A1 M C A S B S

L 8X

RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 )

1.78 (.070) 8X

Part Marking Information

SO8

E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S )

312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101

TOP

PART NUMBER

BO TTO M

IRF7314
Tape & Reel Information
SO8 Dimensions are shown in millimeters (inches)
TE R M IN AL N U M B ER 1

12 .3 ( .48 4 ) 11 .7 ( .46 1 )

8.1 ( .318 ) 7.9 ( .312 )

F EE D D IR EC T IO N

N O TE S : 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 .

330.00 (12.992) M A X.

14.40 ( .566 ) 12.40 ( .488 ) N O T ES : 1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER . 2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541.

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