2N4957,2N4958,

2N5829 (continued!

I L_.~~~~~~~-~

'l'he RF Line
'.2 GHz 2.0 mAde -

2N4957,
2N4958,

2N5829

PNP SILICON
designed applications
®

SMALL·SIGNAL
low-noise

TRANSISTORS
oscillator and mixer

1.0 GHz

2.0

mAde

2N4959

for high-gain,

amplifier,

HIGH FREQUENCY TRANSISTORS

PNP SILICON

l
I

'ELECTRICAL

CHARACTERiSTICS
Char~cteristic

{TA ~ 2SoC unless otherwise

I Symbol I Min I Typ

noted.I
~ax

I Unh -1

OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C" 1.0 mAde, I B " 0) Collector-Base Breakdown (IC" 100!,Ade, IE" Voltage 0)

Specified 2.0 mAde, 10 Vdc Cberacterrsncs

Noise '" 2.5 dB 30 dB " 3.3 dB " 3.8 dB Mlnlillum 2N 5829 2N4957 2N4958 2N4959 {@ 450

>-

I
I
I

Gain '" 17 dB - 2N4957 '" 16 dB - 2N4958 ~ 15 dB 2N4959 Product -

2N5829

(@450MHz)

-I

Emitter-Base Breakdown Voltage (IE" 100 pAde, 'C" 0) Collector Cutoff Current (VCB" 10 Vee. IE" 0) (VCB~ 10Vde, 'E" 0, TA" ON CHARACTERISTICS DC Current Gain (lC" 2.0 mAde, V CE ~ 10 vdc! Ali Types 150°C)

'L

ClH,€nt-Galll-B8ndwidth

'"

1.2 GHz - 2N4957, 1.0 GHz - 2N4958,

2N5829 2N4959

---~-----

Collect cr-Bese Capacitance (VCB" 10 Vdc. 'E" 0, t

>

1.0 MHz)

Small-Signal Current Gain (IC" 2.0mAde, VCE" 10Vde, f" 1.0kHz) 2N5829 Collector-Base Time Constant (IE" 2.0 mAde, VCB" 10 Vde, f ~ 636 MHz) 2N4957,8,9 2N5829
NOise

'MAXIMUM

RATINGS Rating
Symbol Value

Unit

Co+lector-Errutter Cottect or-Base

Voltage Voltage

VCEO VCS VES

30 30 3.0 30 200 1.14 -65

to

v ac
vee

vee
mAde ~lllMETERS
DIM M!N MAX

Figure (Ie" 2.0 m Adc. VCE

dB
c

10 Vdci f

'c
Po
TJ.Ts1g "Indicates JEOEC Registered Da.ta

INCHES
MIN MAX

+200

o
QAI

5.84 4.95 5.33 0.53 0,]6 OA8

0.209 0.178 0.170 0.016

:30

(Ie" 2.0 mAdc. f 01.0 GHz) FUNCTIONAL

VeE 010

450 MHz) 2N4957 2N4958 2N4959 2N5829 Vdc, RG" 50

>

TESTS

)46

25 25

25
13 "indicates JEDEC Registered Data (1) fT is defined as the frequency at which

/hfel extrapolates

to u nitv

2-890

2·891

2N4951, 2N49S8, 2N4959, 2N5829(continued)

2N4957,2N4958,2N4959,2N5829

RF PERFORMANCE

DATA
FIGURE 2 - UNILATERALIZED versus FREQUENCY POWER GAIN

COMMON EMITTER
IVCE
FIGURE 7 - TRANSDUCER versus FREQUENCY GA!N =

DESIGN
=

10 vctc. IC

20 rr-Adc]
FIGURE
4.(l~~

FtGURE

1 - [\I0ISE FIGURE AND POWER TEST CIRCUIT

GAIN

- UNVH.l STAIEHUTV versus FREQUENCY

0
I--+COMMON EMITTER

01-0

I-- -~I--t

N
f~

I-- ~COMM'

;N,t
I
;

i-j- ~ l}:
1--I

tH1
,

~rl
if

)0

II

itt II II I
'I

\
I

r\

i;;;~f~
I

.~:~:~d; ~:;:,~ __
. .-

1[1,1"

101--[-r :1 L VCE'OVd,
0,0
i
20 30

.-

tI

~~
i
\

!
'.0

II'

ill

I
200300
(MHz)

I
10

.r

Iii!
100
IMHzi

"
son

]00

1':::

701) 1000 JSO

5070100
I. FREQUENCY

50070010001500

r.

FREQUENCY

(MHlj

I. fREQUENCY

FIGURE 9 - LOAD ADMITTANCE versus FREQUENCY (REALl FIGURE 3 - NOISE FIGURE

versus

FIGURE 10 - lOAD versus FREQUEhlCY

ADMITTANCE (IMAGINARY)

FREQUENCY

FIGURE

(R S 2~

& tC

OPTIMIZED FOR BROAD BAND PERFORMA 111111111

10 Vdt

, GEl
I

4 - NOISE FIGURE versus COLLECTOR

AND POWER CURRENT

GAIN

6.' 5.0 40

]0

VeE"

t"

450MHz IOVd(

0 0 0 0 0 0
a.mll

RS-150

R5,,"-150

'c ~ LOrnA

Vet'

G,.
TYPICAL

15

<,

10

3.0
I,

15

1.0

_lT~P leAL

"

ro

~ ~ ~
,;,'!O._ f. FREQUENCY1MHd

\ \\I\il* mlllill
0.01 0.' 1.0
f. FREQUENCY,

I
100
1000

1.0f-++--+++++ff+---++--+-++i-+l-t15
lQOOO

10
(MHz)

00.~,_J-;0;';.1--;01.;-J~0;';.5j_0,L.7;'-':'1.0~.L,l,.0-!-3.0:-l-.:l5 . :l0:l,.:l,o.iJ,g .
IC COLLECTOR CURRENT (!!lAde)

FIGURE 11 ~ SOURCE ADMITTANCE versus FREQUENCY (REAL)

F1GUF\E - SOURCE ADMITTANCE versus FREOUENCY (HV!AG~NARY)

FIGURE 5 - CONTOURS OF NOISE FIGURE versus SOURCE RESISTANCE AND COLLECTOR CURRENT 0 100 70 0
5011

FIGURE 6 - CONTOURS OF NOISE FIGURE ver5>JS SOURCE RESISTANCE AND COLLECTOR CURRENT

1000 )GO

300 lOll

""
~,

SOD

300 2.0d8

,00

t-.
1---f-~~

2.5118

-l"

l00~~~~

__ 00
....._

~ 601-t____,--'--++r----+-...;_·---+~-'-~-+-+--c

~~st4j~$1.~'d~'+=t"t2~OtldB'~~~l=tf~
2.5dB 3.0d8.

0 0

3.0d8

:1- :.c~O;:,OH~'
0 0,'

100~~,'~~f'!1~r--~1-"~'
.N 3D

70 50

~M'II
NF 15
0

I. fRE~UENCY NOTE ,ng the The 1 7 through stabdily lll1vlll of 18 Me ",clud~d parhcular {OaS,LS{ t;rcll;t

IMH,i

I.

r R E au

ENCY 1M Hl)

,11 ~07

201-- ~~:;OI~HVld(

sa

F'9ures

uie

cucun sl<,biilly

des'gner cnteoa

,n dCle,n1ln "H' gIven ",

0.2

0.3

O~

Ii!
CURRENT

20 30
(rnAdd

5.0 70 10

'~,~,-L..,0L,.1---!0'3..Lico.5,-L!0~7_[,-\;.0-L,,l;.0,..--c3!-,;0...J..-,J5"-0 L,!-,;ollil'~
IC. COLLECTOR CURRENT (mAdcJ

Two

the';l'f'gures

rc.

COLLECTOR

··C·

IdC!O'· t,;ameasure in

of tran",wrs!.lbolll"y {open c.rco.u

when

the "'PU! When

~<1d output

are te,m<nated

n-e

worst·C<lse

CQnd<lIon

2-892

2-893

2N4957,

2['114958, 2N4959,

2N5829

(continued)

2N4951,

2N4958,

2N4959,

2N5829(continuedi

COMMON BASE CIRCUIT DESIGN DATA

(VeB
FIGURE 13 - TRANSDUCER vorSU$ FREQUENCY GAiN
0

FIGURE

19 _ SMAlL·SIGNAL CURRENT versus. FREQUENCY

GAiN

f-iGURE

20 - POLAR

10 Vdc. Ie"

2,0 mAde)
FIGURE 14 - lINVltL STABILITY versus FREQUENCY FACTOR

1 8· 4 0 6 1 0 .~-

1'Jl

,I

T1'
N.ihfel(dBI

O~'I-T-k"U 0

(NOTE

1)

50rT-'-lrrlrlrr-I-'-I-.-.~'~~-'--.rINrOT-E~1I
1 _c::;.. \ I oH-+It=I=FIItt== 1T+=-i-W-'"W-W-W+-, __j

Or=-- t-- f!:'..

5f--- l---10 200

-i·~-~
1.0

t
I

\ i~
i i~
I, \

i I'
I

,2.0

-~
)~

i'" ~o~'Isun f-. s:OOO

~3!lO

=:: I-,II

zeu

I 1':

.;Z~
f-""

1o_m~d'=
_.".

' f-"-

..

_,

I~
,

il
tj

."

f .. ).,-

·HI

-1m (hfe)

<;
~

:f-Ij "i
10 -104~5

-(

olO'Vd
20

i<

ii

l'N
I
(MHz)

-20

75 <,
c"-

',f-I-.,,-

~iRe(hle)i

i
5070100
L FREQUENCY

~
>D ,40 ,1.0 40 6G80

!;--

30

200300

I"
14

'1G

50070010001500

JOO

i
500 (fREQUENCY

700 (MHll

1000

1500

_Lo!o~hI-_J......, 200 300 I 100 I±c-LJ,,-JUVlJ.c-LLLLL__j 70 500 700 1000

I_ fREQUENCY (MH<!

1500

FIGURE

21 - fT lIersusCOLLECTOR

CURRENT
in 0

FIGURE 22-

fiGURE 15 - LOAD ADMITTANCE versus FREQUENCY (REAL) 2~--r' 4

FIGURE 16 - LOAD ADMITTANCE versus FREQUENCY (IMAGINARY)

0c0
(NOTE 1)

Vcs

IOVdc

Of0,-

0.6

"":1 / '/
/

/ /

I I /

(NOTE

1)

0.4

40

o~
0.1

'7
V/'
11 300

/'

ly

7 7" /

II ~'1 / /.y
~
1000 1500 /40/

1
0

0
0 k.1.2thru~

/
_."

/
'c

I
01 2Q3

,
0.50.710

00 0

III

!I

2.03.0

III
5070 CURRENT 10

,
I

I
10 3D

so

0::::'-100

I.0

t
3.0

I 111 -H:t
5.0
f,

500

700

1000

Of-0

f--

H500
f,

700

JOo

I I

COLLECTOR

CURRENT

(mAde)

rc. COLLECTOR

ImMel

FIGURE 23 - CAPAC IT ANCE 700 1000 1500 30 0

FIGURE

24 - COLLECTOR

CHARACTERISTlCS

FREQUENCY (MHz)

FREQUENCY (MHz)

flGUFiE 0

V®i"SU:l.

17 - SOURCE FREQUENCY

ADMiTTANCE (REA.lI 0
(NOTE 1)

FIGURE
V(>I"5US

HI - SOURCE ADMITTANCE FREQUENCY (IMAGINARY)

~1

olL 7=--++
5

Til
I

Tc:2_50C

,\

,,
I

vERTICAL

SCALE

),DmAl01V
,~.

~ '" 1.2

"

t!J

i .-f-- ~ " .. ~ -0 12 40

,-

t~
,
f.-

~
0

(NOTE

1)

F--

1.0 4.0 10

r-~ t:::f::::

3~1 H',
',c

of..--~
0 0 0 0 1 00

200

~-

~\
~
1500

-1.1

!i{ld]

700
(MHz)

1000

300

500

700

1000

""

01

ri0.2

++

~+~ rt+ Iii 05

j10 20
REVERSE VOLTAGE

if" t
t

I Cd) Ib
0

H ~'h ,
i!
10 {VOLTS) )Q

0.02

mA/STEP

so

! 100

HORIZONTAL

SCALE

- VeE

10 V!OiV

1500

f, fREo.UHIlCV

f, FREUuENCY (MH.)

2,895 2,894

2N4958,

2N495!l1, 2N5829 (continued)

2N4951,

2N4958,

2N4959,

21\15829 (continued!

COMMON BASE

Y PARAMETERS versus CURRENT II 450MHzI 15 Vdc COMMON EMITTER VeE" 10Vdc___ VeE" 15Vdc __ ~
FIGURE

COMIVION BASE Y PJl,RA.fVlETEfi

(VCB Y PARAMETERS versus FREQUENCY
co

VARif\TIONS
y
F1GURE 34 - Vib iNPUT ADMiTTANCE

10 Vdc,

'c

:2 0 mf\ckl

vce - 10 Vdc ----.

VeB"

33 - Yib INPUT AOM!TT ANCE

FIGURE 25 - INPUT ADMITTANCE 0 0 0 0

g"

FIGURE 26 - INPUT ADMITTANCE

0 0 9ib

0 0 0 o~·
0

~~ ~ I·,o,b ~

t---

I-::-;:

+:::-- -

0 0 1 20

r-l I
i
I

r-,
"
~:

t+

f-----

>'
~ ~

4'°r--!·~r-t~+--i'--+~+·-+~ _ +
20

10 0 45

r--+-+--I-----r--t---j--i.~+_.-.I--_j

I I
70

l-+
1

·"c·- j

..

,:;;
20
,MH,

/r-

-Ibjb~

I
100 200
I, FREQUENCY

300
(MHzj

I
1

\1
i
15011

'''r- i·
;'0

~~[

~
10 15

1000

1 500

I
100 1000

2C

'-I
II 30

if 40
]5 1000

16~~

V"
45

4soil
50

: ]OOj+-

Yib(mmhos)

FIGURE 0 0 0 0 0 0

35 - Yfb FORWARD TRANSFER

~ 60t---+ ..--+ .._.~

, ,
, 1

-glb

I V i ,
!

q+
_.V>K
)

ADMITTANCE

FIGURE

36 - Yf b FORWARD TRANSfER

A.DMlTTil.I\ICE: .. -

1 ,i
I

T ~
\
,oj ...

i
/'
1600

7!iIil
1/

....

!
:

-::~',-, ~~I"-

a
0 0 0 4\
70 100

tibtb

i
I
200 I, FREQUENCY 300 (MH,l

1
500 700 1000

\
1.00
60

/loo

r:"1
.;0 qlh(mmhO$)

10 FIGURE 38 vob OUTPUT ADMITTANCE

FIGURE

30 - OUTPUT

ADMITTANCE
1

F!GURE

37 - vee OUTPUT

ADMITTANCE

.-+--- ·Ibob,e--·-·~_-i +--I--'-~- I-+'_+_~_-I ~ ~ 2.0f----f--t--+- ..j--+-_-i-_.{_ .. ;.... C"1--. 1--1-·+_ I"'-+--f--l~ 101'-1'-'1"'_ "- ...... ---+-.+
I--+- - 1--.- '---!--I-.
o 'FIGURE 31 - REVERSE TRANSFER ADMITTANCE
'

_§

30'1-'+>=--+.

__ 1- ...

10

-:;1

12 10

P 15

It'",

0 0 0
..

-r,
I
1 l-jbob

3)-1
'-1
-I

:200 100
I

1-'

_.-

o h

0 0

---+70 FIGURE 100 200

t, FREQUENCY

J--::
300
jMH1)

./

gob

'1

4.0

"[igS
0;

p:~~'
750 20

- - ~ 1--\--~
... ..-. 60 0.0 10
11

..

500

7UO

1000

90b{,nn,hm:1

'"
~o,

1G

13

1G

/2

---S

l'lb'b

----~
...

'1f-!-..-.
. ~ 1

....

.- \-. '-

li
0

FIGURE

32 - REVERSE TRANSFER

ADMITTANCE

r I

a I
6
4

39 - Yrb REVERSE TRANSFER

AlJNltTT ANCE

FIGURE 40 - Yrb REVERSE TRANSfER. '100 :45

ADIViITTM.JCE

.4

!--2 ',--

...

__

c-0 0

t., ......

i--

1 ·-· ..

,
6

f--

r- r--F

·i-·L
"g"

l"

-- !--- -+-1

T
!

1.0

40 't. COLLE:CTOR

l
6.0 CUHRENT ImAde)

!--- !-~
8.0
10

J
I
2.0
'c

"all

'i'

i
4.0 COLLECTOR

i
0.0 0.0
(mAde)

I I
10

e ~ a1
0
45

, i

,
j/

i·Hkfi II /
l1Ig,,,
150[

! :

1200,
1450' e

+.-

"1

60C
750

>

1,1
70 IOiJ

, ~=1=

I-+-

i,oo'o

1--1-'
I

'T

lOU I. FREQUENCY

]00

Ilit +.+. ,..,.

i1

!'20? i
11;00
'Irb lmmhosl

lE ·r

>04

CURRENT

2-896

2-897

2N4957,

2N4958,

2N4959,

2N5829(continued)

2N4993

(SILICON)

COMMON EMITTER Y PARAMETER

(VCE PARAMETERS versus FREQUENCY
=

VARIATIONS
versus FREQUENCY
ADMITTANCE

10 Vde, IC

2.0 mAde) POLAR Y PARAMETERS

,
4

FIGURE

42 - Vie INPUT

2 0 0

Y
300

;S; ,600_

t-75O

r-J
11O~

a o o 0 e
e
9f,

1/

1'\ 1200

VOLTS

mW
DS 2519

200

1'00
'45MHc 2.04.0 6.08.010 12
9ie{mmflos)

'i 'l
OO

SILICON
designed half-wave SCR for

BIDIRECTIONAL
triggering applications in Triac and

SWITCH
phase control circuits,

"

16

18

20

22

24

]6

full-wave

trigger'm9

as voltage

level detectors

FIGURE 0

44 - Vfe FORWARD

TRANSFER

ADMiTTANCE

60

~ ~
<

SO 40

I
1

r-,

~aJO

~~20

e>

10

a
~1D I 70

---jbte

V
I

V I""i'

<,

0 0
1500MHz

45
lOOt
{!I

I
1001

Low Switching Uniform Low Low

Voltage

~- 8_0 Volts in Each -

Typical

Characteristics Voltage Current

Direction Maximum

<,
120~

.Y
/300 1000

<:11

On-State Oft-State

1.7 Volts

1,0 tlA Maximum

<,
500 700 1000 1500

~4 0 -5 a 20

Low Temperature

Coefficient

-·0.02

%/oC

Typical

~'"

'00

200 300 1, FREQUENCY (MHz) 45 - 'foe OUTPUT

10 FIGURE

---

450 750 10 20
9fe(mmhQs)

600 30 40 60

"
E
z .§

"
10 8.0 '.0

FIGURE

ADMITTANCE 2

46 - Vat! OUTPUT

ADMITTANCF

1~500MHI

~-----~~---~"-l
I

a
-tjbO€

A.
~200 1000

~ « ~ e. ~a
0

..
E

0
6

0 .,/ '-" 70 100 1. FIGURE 200

FREQUENCY

1
90e/ 300
(MHz)

"

0750

600 450

'MAXIMUM

RATINGS Rating
Symbol Value

Unit
mW

20

.5

SOO

700

lGOO

15[)O

0300 200 100 045

Power DISSIpation

PD 'F only)
IG(offl

350 200 50 10

10

"

20

DC Forward

Anode Current (ott.state

see (mrnhosl

DC Gate Current ADMITTANCE Wldthl I

47 -YW>(iREVERSE

TRANSFER

ADMITTANCE 0
-IOre/

FIGURE

48 - vre REVERSE

TRANSfER

a
0

~1. 0-

4SMHI 100 _200 300 -450 600

Peak Forward Current Duty Cycle, 10lls Pulse Non-Repetnive Forward 10 IlS Pulse Width Operating Range Storage Temperature Range Junction Current

IFM(rep)

IFM(nonrep) TJ Tstg -55

5,0
\0

Amp

1.

_I-'
0 45 70 100 t 100
FREQUENCY

300

--(MHz)

v500 700

1000

""

Temperature

+150

cc cc

-65 to t200

y
1000

~"ce
1500

~3 0 1-150{ ~4 0

1100/

·lndl~~les

Jf'_OEC Regi5lerl'<d O~!a

CASE. 22-0'3

20

1.0

10

2.0

3.0

4.0

50

6.0

r-o.tar

2·898

2899