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Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

Chapter 5
5.1
(a) i E = (1 + )i B 1 + =

325
= 116 = 115
2.8

115
=
= 0.9914
1 + 116
iC = i E i B = 325 2.8 = 322 A

(b) 1 + =

1.80
= 90 = 89
0.020

89
= 0.9889
90
iC = 1.80 0.02 = 1.78 mA
______________________________________________________________________________________

5.2
(a) =

i C 726
=
= 0.9918
i E 732

0.9918
=
= 121
1 1 0.9918
i B = i E iC = 732 726 = 6 A
=

2.902
= 0.9801
2.961

0.980074
=
=
= 49.19
1 1 0.980074
i B = 2.961 2.902 i B = 59 A
______________________________________________________________________________________

(b) =

5.3
(a)

For

For
(b)
or

= 110:

= 180:

1+

110
= 0.99099
111

180
= 0.99448
181

0.99099 0.99448

I C = I B = 110 ( 50 A ) I C = 5.50 mA
I C = 180 ( 50 A ) I C = 9.00 mA

5.50 I C 9.0 mA
so
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.4
(a) i B =

iE
1.25
=
i B = 8.28 A
1 + 151


150
i E =
iC =
(1.25) = 1.242 mA
151
1+
150
=
= 0.9934
151
4.52
(b) i B =
i B = 55.8 A
81
80
i C = (4.52 ) = 4.46 mA
81
80
= 0.9877
81
______________________________________________________________________________________

5.5
(a)

0.9
0.95
0.98
0.99
0.995
0.999

9
19
49
99
199
999

(b)

1+

20
0.9524
50
0.9804
100
0.9901
150
0.9934
220
0.9955
400
0.9975
______________________________________________________________________________________
5.6
(a) I B =

IE
1.2
=
I B = 14.8 A
1 + 81


80
I E = (1.2 ) = 1.185 mA
I C =
+
1

81

80
=
= 0.9877
81
VC = 5 (1.185)(2 ) = 2.63 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
0.8
I B = 9.88 A
81
80
I C = (0.8) = 0.790 mA
81
= 0.9877
VC = 5 (0.790)(2 ) = 3.42 V

(b) I B =

1.2
I B = 9.92 A
121
120
IC =
(1.2 ) = 1.19 mA
121
120
=
= 0.9917
121
VC = 5 (1.19 )(2 ) = 2.62 V

(c) (i) I B =

0.8
I B = 6.61 A
121
120
IC =
(0.8) = 0.7934 mA
121
= 0.9917
VC = 5 (0.7934 )(2 ) = 3.41 V
______________________________________________________________________________________

(ii) I B =

5.7
V
I E = I Eo exp BE
VT

V
0.80 10 3 = 5 10 14 exp BE
VT

0.80 10 3
= 0.6109 V
Then V BE = (0.026) ln
14
5 10

0.9910

=
= 110
=
1 1 0.9910
I C = I E = (0.9910)(0.80) = 0.7928 mA

IE
0.80
=
I B = 7.21 A
1 + 111
VC = 5 I C RC = 5 (0.7928)(2) = 3.41 V
______________________________________________________________________________________
IB =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.8
0.75
12.3 A
61
60
= ( 0.75 ) = 0.738 mA
61
60
=
= 0.9836
61
= I C RC 10 = ( 0.738 )( 5 ) 10
= 6.31 V

IB =
IC

(a)

VC
VC

(b)

1.5
24.6 A
61
60
I C = (1.5 ) = 1.475 mA
61
60
= = 0.9836
61
VC = (1.475 )( 5 ) 10 VC = 2.625 V
IB =

(c) Yes, VC < 0 in both cases so that B-C junction is reverse biased.
______________________________________________________________________________________
5.9
(a) VC = I C (5) 10
1.2 = I C (5) 10 I C = 1.76 mA
I
1.76
IE = C =
= 1.785 mA
0.986
I B = I E I C = 1.785 1.76 I B = 25 A
V
(b) I E = I Eo exp EB
VT

V
1.785 10 3 = 2 10 15 exp EB
VT

1.785 10 3
= 0.7154 V
V EB = (0.026) ln
15

2 10
______________________________________________________________________________________

5.10

iC = I S exp BE
VT
i C = 93.7 A

0.615
= 5 10 15 exp

0.026

93.7
= 0.7495 A
125
i E = (126 )(0.7495) = 94.44 A
______________________________________________________________________________________
iB =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.11
vEB / VT
0.5 10 3 = I Eo1e 0.650 / 0.026
Device 1: iE = I Eo1e
So that
I EO1 = 6.94 1015 A
3
0.650 / 0.026
Device 2: 12.2 10 = I Eo 2 e
Or
I Eo 2 = 1.69 1013 A

I Eo 2 1.69 10 13
=
Ratio = 24.4
I Eo1 6.94 10 15
______________________________________________________________________________________
Ratio of areas =

5.12
For transistor A:
275 10 6

= 0.6906 V
BE ( A) = VT ln C = (0.026 ) ln
16

8 10
I SA

For transistor B:
I SB = 4 I SA = 4 8 10 16 = 3.2 10 15 A

275 10 6
= 0.6546 V
15
3.2 10
______________________________________________________________________________________

BE (B ) = (0.026 ) ln

5.13

(a) i C = I Co 1 + CE
VA

0.6 = I Co 1 + I Co = 0.58537 mA
80

At CE = 5 V
5

i C = (0.58537 )1 + = 0.622 mA
80
CE
52
(b) ro =
=
ro = 137 k
i C
0.621956 0.60
______________________________________________________________________________________

5.14
BVC E 0 =

BVC B 0
3

60
3

100

BVC E 0 = 12.9 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.15

BVC E 0 =
56 =

220
3

BVC B 0
3

3 =

220
= 3.93
56

= 60.6
______________________________________________________________________________________
5.16

BVC E 0 =

BVC B 0
3

BVC B 0 = ( BVC E 0 ) 3 = ( 50 ) 3 50
BVC B 0 = 184 V
______________________________________________________________________________________
5.17

0.7 ( 10 )

IE =

= 1.86 mA
5
75
I C = (1.86 ) = 1.836 mA
76
VC = 0.7 + 4 = 3.3 V

(a)

RC =

10 3.3
RC = 3.65 K
1.836

0.5
= 0.00658 mA
76
VB = I B RB = ( 0.00658 )( 25 ) VB = 0.164 V
IB =

(b)

75
I C = ( 0.5 ) = 0.493 mA
76
1 ( 5 )
RC = 8.11 K
RC =
0.493

IE
(10 ) + 0.7 + I E ( 4 ) 8
76
7.3 = I E ( 4 + 0.132 ) I E = 1.767 mA
O=

75
I C = (1.767 ) = 1.744 mA
76
VCE = 8 (1.744 )( 4 ) (1.767 )( 4 ) 8
(c)

= 16 6.972 7.068 VCE = 1.96 V


I
5 = I E (10 ) + E ( 20 ) + 0.7 + I E ( 2 )
= I E (10 + 0.263 + 2 ) + 0.7
76
I E = 0.3506 mA I B = 4.61 A
VC = 5 ( 0.3506 )(10 )

VC = 1.49 V
(d)
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.18
For Fig. P5.17(a), R E = 5 + 5% = 5.25 k
IE =

0.7 ( 10 )

5.25
I C = 1.75 mA

= 1.77 mA

10 3.3
= 3.83 K
1.75
RE = 5 5% = 4.75 K

RC =

IE =

0.7 ( 10 )

= 1.96 mA
4.75
I C = 1.93 mA
10 3.3
= 3.47 K
RC =
1.93
So 1.75 I C 1.93 mA 3.47 RC 3.83 K
For Fig. P5.17(c), R E = 4 + 5% = 4.2 k
IB =

8 0.7
= 0.0222 mA
10 + ( 76 )( 4.2 )

I C = 1.66 mA

I E = 1.69 mA

VCE = 16 (1.66 )( 4 ) (1.69 )( 4.2 )


= 16 6.64 7.098 VCE = 2.26 V
RE = 4 5% = 3.8 K
IB =

8 0.7
= 0.0244 I C = 1.83 mA
10 + ( 76 )( 3.8 )

I E = 1.86 mA
VCE = 16 (1.83)( 4 ) (1.86 )( 3.8 )
= 16 7.32 7.068
VCE = 1.61 V
So 1.66 I C 1.83 mA 1.61 VCE 2.26 V
______________________________________________________________________________________

5.19
(a) VCC = I C RC + VCE
2.5 1.1
= 0.35 mA
4
V
I C = I S exp BE
VT

IC =

0.35 10 3
V BE = V BB = (0.026 ) ln
16
5 10

= 0.7091 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(b) I E =

VCC VCE 2.5 1.1


=
= 0.7 mA
RE
2


I C =
1+

90
I E = (0.70 ) = 0.6923 mA
91

0.6923 10 3
= 0.7269 V
V BE = (0.026 ) ln
16

5 10
V BB = V BE + I E R E = 0.7269 + (0.7 )(2 ) = 2.127 V
______________________________________________________________________________________

5.20
(a) I C = 0 , VCE = 2 V
(b) I C = I B = (120 )(2 ) I C = 0.24 mA
VCE = 2 (0.24 )(4 ) = 1.04 V
1.4 0.7
= 0.35 mA
2
120
IC =
(0.35) = 0.3471 mA
121
VCE = 2 (0.3471)(4 ) (0.35)(2 ) = 0.088 V - Not possible
Transistor in Saturation
VCE = 0.2 V

(c) I E =

V E = 0.7 V VC = 0.9 V
2 0.9
= 0.275 mA
4
______________________________________________________________________________________
IC =

5.21

2 (0.7 + 0.2 )
= 0.7333 mA
1.5

120
I E =
I C =
(0.7333) = 0.7273 mA
121
1+

(a) I E =

V EC = V E = 0.9 V

(b) I C = I B = (120 )(15) I C = 1.8 mA - Not possible


Transistor in saturation
V EC = 0.2 V
2 0.2
= 1.2 mA
1.5
I C = I E I B = 1.2 0.015 = 1.185 mA
IE =

(c) Transistor cutoff


I C = 0 , V EC = 2 V
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.22

V BB V BE (on )
1.3 0.7
RB =
= 120 k
RB
0.005
= I BQ = (100 )(0.005 ) = 0.5 mA

(a) I BQ =
I CQ

3 1.5
= 3k
0.5
(b) For = 75 , I CQ = (75 )(0.005 ) = 0.375 mA
RC =

VCE = 3 (0.375)(3) = 1.875 V


For = 125 , I CQ = (125 )(0.005 ) = 0.625 mA
VCE = 3 (0.625)(3) = 1.125 V

So 1.125 VCE 1.875 V


______________________________________________________________________________________
5.23
(a)
VB = I B RB I B =

VB ( 1)
=
RB
500

I B = 2.0 A
VE = 1 0.7 = 1.7 V
IE =

VE ( 3)
RE

1.7 + 3
= 0.2708 mA
4.8

IE
0.2708
= (1 + ) =
= 135.4 = 134.4
IB
0.002

= 0.9926
1+
I C = I B I C = 0.269 mA
VCE = 3 VE = 3 ( 1.7 ) VCE = 4.7 V

(b)
54
I E = 0.5 mA
2
4 = 0.7 + I B RB + ( I B + I C ) RC 5
I B + IC = I E
IE =

I B + IC = I E
4 = 0.7 + I B (100 ) + ( 0.5 )( 8 ) 5
I B = 0.043

IE
0.5
= (1 + ) =
= 11.63
IB
0.043

= 10.63, =

= 0.9140
1+
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.24

(V 0.7 ) + 5
5 VB

90
I E = I E
, IE = B
, I C =
10
3
91
1+
5 V B 90 V B + 4.3
Then
=
V B = 2.136 V
10
3
91

(a) I C =

2.136 0.7 + 5
= 0.721 mA
3
= 10 I C (10) I E (3)

IE =

(b) VCE

90
2 = 10 I E 3 + (10 ) = 10 I E (12.89 )
91
Then I E = 0.6206 mA
And V B = 0.7 + (0.6206)(3) 5 = 2.438 V
______________________________________________________________________________________

5.25
3.3 0.85
= 0.245 mA
10
0.85 0.7
IB =
IB = 3 A
50
I C = I E I B = 0.245 0.003 = 0.242 mA

(a) I E =

I C 0.242
=
= 80.67
I B 0.003

80.67
= 0.9878
1 + 81.67
VC = (0.242 )(10 ) 3.3 = 0.88 V
V EC = 0.85 ( 0.88) = 1.73 V
(b) = (80.67 )(1.10 ) = 88.73

IB =

V E 0.7
3.3 V E
V 0.7
, IE =
= (89.73) E
, V E = 0.8371 V
50
10
50

3.3 0.8371
= 0.2463 mA
10
88.73
IC =
(0.2463) = 0.2435 mA
89.73
IE =

VC = (0.2435)(10 ) 3.3 = 0.8645 V


V EC = 0.8371 ( 0.8645) = 1.70 V
______________________________________________________________________________________

5.26
5 0.7
17.2 A
250
I C = (120 )( 0.0172 ) = 2.064 mA
VC = ( 2.064 )(1.5 ) 5 = 1.90 V
VEC = 5 ( 1.90 ) VEC = 6.90 V
IB =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

______________________________________________________________________________________
5.27
50
I C = (1) = 0.98 mA
51
VC = I C RC 9 = ( 0.98 )( 4.7 ) 9 or VC = 4.39 V
1
= 0.0196 mA
51
VE = I B RB + VEB ( on ) = ( 0.0196 )( 50 ) + 0.7 or VE = 1.68 V
IB =

______________________________________________________________________________________
5.28
0.5
50
I C = ( 0.5 ) = 0.49 mA, I B =
= 0.0098 mA
51
51
VE = I B RB + VEB ( on ) = ( 0.0098 )( 50 ) + 0.7 or VE = 1.19 V
VC = I C RC 9 = ( 0.49 )( 4.7 ) 9 = 6.70 V

Then VEC = VE VC = 1.19 ( 6.7 ) == 7.89 V

PQ = I CVEC + I BVEB = ( 0.49 )( 7.89 ) + ( 0.0098 )( 0.7 ) or PQ = 3.87 mW

Power Dissipated = PS = I Q ( 9 VE ) = ( 0.5 )( 9 1.19 )


P = 3.91 mW
Or S
______________________________________________________________________________________
5.29
I
I E1 = I E 2 = 0.5 mA
2
0.5 mA

I E1 = I E 2 =
I C1 = I C 2

VC1 = VC 2 = 5 ( 0.5 )( 4 ) VC1 = VC 2 = 3 V

______________________________________________________________________________________
5.30

RE = 0 I B =

(a)

2 0.7 1.3
=
RB
RB

1.3 5 2
I C = ( 80 ) =
= 0.8 RC = 3.75 K
RB RC
RB = 130 K

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
0.8
81
RE = 1 K I B =
= 0.010 mA I E = 0.8 = 0.81 mA
80
80
2 = ( 0.010 )( RB ) + 0.7 + ( 0.81)(1) RB = 49 K
(b)
(c)

5 = ( 0.8 ) RC + 2 + ( 0.81)(1) RC = 2.74 K


IB =

For part (a)

2 0.7
= 0.01 mA
130

I C = (120 )( 0.01) I C = 1.20 mA


VCE = 5 (1.2 )( 3.75 ) VCE = 0.5 V

2 = I B ( 49 ) + 0.7 + (121) I B (1)


For part (b)
I B = 0.00765 mA, I E = 0.925 mA, I C = 0.918 mA
VCE = 5 ( 0.918 )( 2.74 ) ( 0.925 )(1) VCE = 1.56 V
Including RE result in smaller changes in Q-point values.
______________________________________________________________________________________
5.31

(a) RC =

VCC VCEQ
I CQ

9 4.5
= 18 k
0.25

0.25
I BQ = 3.125 A
80
9 0.7
RB =
R B = 2.656 M
0.003125
(b) I CQ = (120 )(0.003125 ) = 0.375 mA
I BQ =

V CEQ = 9 (0.375 )(18 ) = 2.25 V

______________________________________________________________________________________
5.32
(a) I C = I E = 0 , VC = 6 V
0.9 0.7
150
= 0.2 mA, I C =
(0.2 ) = 0.1987 mA
1
151
VC = 6 (0.1987 )(10 ) = 4.013 V

(b) I E =

1.5 0.7
= 0.8 mA
1
Transistor in saturation
VC = 1.5 0.7 + 0.2 = 1 V

(c) I E =

6 1
= 0.5 mA
10
2.2 0.7
= 1.5 mA
(d) I E =
1
VC = 2.2 0.7 + 0.2 = 1.7 V
IC =

6 1 .7
= 0.43 mA
10
______________________________________________________________________________________
IC =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.33

VBB = 0.
RL
10
Cutoff V0 =
VCC =
(5)
10 + 5
RC + RL
V0 = 3.33 V

a.

VBB = 1 V
1 0.7
6 A
50
I C = I B = ( 75 )( 6 ) I C = 0.45 mA
IB =

5 V0
V
= IC + 0
5
10
1 1
1 0.45 = V0 + V0 = 1.83 V
5 10

b.

V0 = VCE ( sat ) = 0.2 V


c.
Transistor in saturation
______________________________________________________________________________________

5.34

= 100

(a)

100
I Q = 0.1 mA I C =
( 0.1) = 0.0990 mA
101
VO = 5 ( 0.099 )( 5 ) VO = 4.505 V

(i)

100
I Q = 0.5 mA I C =
( 0.5 ) = 0.495 mA
101
VO = 5 ( 0.495 )( 5 ) VO = 2.525 V

(ii)

I Q = 2 mA Transistor is in saturation

(iii)
(b)

VO = VBE ( sat ) + VCE ( sat ) = 0.7 + 0.2 VO = 0.5 V

= 150

150
I Q = 0.1 mA I C =
( 0.1) = 0.09934 mA
151
VO = 5 ( 0.09934 )( 5) VO = 4.503 V

(i)

% change =

4.503 4.505
100% = 0.044%
4.503

150
I Q = 0.5 mA I C =
( 0.5 ) = 0.4967 mA
151
VO = 5 ( 0.4967 )( 5 ) VO = 2.517 V

(ii)

% change =

2.517 2.525
100% = 0.32%
2.525

I Q = 2 mA Transistor in saturation

V = 8.5 V
No change
(iii) o
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

5.35
54
= 0.20 mA
5
121
IQ = I E =
(0.20 ) = 0.2017 mA
120

(a) I C =

52
= 0.60 mA
5
121
IQ = I E =
(0.60 ) = 0.605 mA
120

(b) I C =

50
= 1.0 mA
5
121
IQ = I E =
(1.0 ) = 1.008 mA
120
______________________________________________________________________________________

(c) I C =

5.36

For

I Q = 0,

then

PQ = 0

50
I Q = 0.5 mA, I C = ( 0.5) = 0.49 mA
51
For
0.5
IB =
= 0.0098 mA, VB = 0.490 V , VE = 1.19 V
51
VC = ( 0.49 )( 4.7 ) 9 = 6.70 V VEC = 7.89 V
P I CVEC = ( 0.49 )( 7.89 ) P = 3.87 mW
For
For

I Q = 1.0 mA,

Using the same calculations as above, we find P = 5.95 mW


I Q = 1.5 mA, P = 6.26 mW

For

I Q = 2 mA, P = 4.80 mW

For

I Q = 2.5 mA, P = 1.57 mW

For

I Q = 3 mA,

Transistor is in saturation.
0.7 + I B ( 50 ) = 0.2 + I C ( 4.7 ) 9
I E = IQ = I B + IC I B = 3 IC

Then, 0.7 + ( 3 I C )( 50 ) = 0.2 + I C ( 4.7 ) 9


Which yields I C = 2.916 mA and I B = 0.084 mA
P = I BVEB + I CVEC = ( 0.084 )( 0.7 ) + ( 2.916 )( 0.2 )

or P = 0.642 mW
______________________________________________________________________________________
5.37
IE =

VEE VEB ( on )
RE

9 0.7
I E = 2.075 mA
4

I C = I E = ( 0.9920 ) ( 2.075 ) I C = 2.06 mA


VBC + I C RC = VCC

VBC = 9 ( 2.06 ) ( 2.2 ) VBC = 4.47 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
______________________________________________________________________________________
5.38
12 6
2.727
= 2.727 mA, I B =
= 0.03409 mA
2.2
80
0.7 ( 12 )
=
= 0.127 mA
100
= I B + I R 2 = 0.1611 mA

(a) I C =
I R2

I R1

V I = I R1 R1 + 0.7 = (0.1611)(15) + 0.7 = 3.12 V

12 9
= 1.364 mA, I B = 0.01705 mA
2.2
= 0.01705 + 0.127 = 0.14405 mA

(b) For V CEQ = 9 V, I C =


I R1

V I = (0.14405)(15) + 0.7 = 2.86 V

12 3
= 4.0909 mA, I B = 0.05114 mA
2.2
= 0.05114 + 0.127 = 0.1781 mA

For V CEQ = 3 V, I C =
I R1

V I = (0.1781)(15) + 0.7 = 3.37 V

So 2.86 V I 3.37 V
______________________________________________________________________________________
5.39
For VCE = 4.5
5 4.5
= 0.5 mA
I CQ =
1
0.5
I BQ =
= 0.02 mA
25
0.7 ( 5 )
IR2 =
= 0.057 mA
100
I R1 = I R 2 + I BQ = 0.057 + 0.02 = 0.077 mA
V1 = I R1 R1 + VBE ( on ) = ( 0.077 )(15 ) + 0.7 = 1.86 V
For VCE = 1.0
5 1
I CQ =
= 4 mA
1
4
I BQ =
= 0.16 mA
25
I R 2 = 0.057 mA
I R1 = I R 2 + I BQ = 0.057 + 0.16 = 0.217 mA
V1 = ( 0.217 )(15 ) + 0.7 3.96 V

So

1.86 V1 3.96 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

______________________________________________________________________________________
5.40
5 2.5
=5K
0.5
0.5
IB =
= 0.00417 mA
120
5 0.7
RB =
= 1032 K
0.00417

RC =

(a)

Choose RC = 5.1 K
RB = 1 M
(b)
For RB = 1 M + 10% = 1.1 M, RC = 5.1 k + 10% = 5.61 K

5 0.7
= 3.91 A I CQ = 0.469 mA
1.1
= 2.37 V

I BQ =
VCEQ

RB = 1 M + 10% = 1.1M, RC = 5.1 K 10% = 4.59 K


I BQ = 3.91 A I CQ = 0.469 mA
VCEQ = 2.85 V

RB = 1 M 10% = 0.90 M
RC = 5.1 k + 10% = 5.61 K
5 0.7
I BQ =
= 4.78 A I C = 0.573 mA
0.90
VCEQ = 1.78 V
RB = 1 M 10% = 0.90 M
I BQ = 4.78 A I C = 0.573 mA
VCEQ = 2.37 V

RC = 5.1 k 10% = 4.59 K

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

______________________________________________________________________________________
5.41
VE 2 = 5 VBE 2

VE1 = 5 VBE1

VO = VE 2 VE1 = ( 5 VBE 2 ) ( 5 VBE1 )


VO = VBE1 VBE 2

I
We have VBE1 = VE ln E1
I EO
I
VBE 2 = VT ln E 2
I EO
I
VO = VT ln E1
I EO

IE2
ln

I EO

I
10
VO = VT ln E1 = VT ln I
I
IE2
kT
ln (10 )
e
______________________________________________________________________________________
VO =

5.42
54
0.25
= 0.25 mA, I B =
= 0.002083 mA
120
4
V I = (0.002083)(200 ) + 0.7 = 1.117 V

(a) (i) I C =

121
(ii) I C = 0.25 mA, I E =
(0.25) = 0.252 mA
120
V I = (0.002083)(200 ) + 0.7 + (0.252)(1) = 1.369 V

5 2.5
0.625
= 0.625 mA, I B =
= 0.005208 mA
120
4
V I = (0.005208)(200 ) + 0.7 = 1.742 V

(b) (i) I C =

121
(ii) I E =
(0.625) = 0.6302 mA
120
V I = 1.742 + (0.6302 )(1) = 2.372 V
(c) Transistor biased in saturation
3.5 = I B (200 ) + 0.7 + I E (1)
V 0.2
5 VO
, IE = O
IC =
4
1

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
V 0.2 5 VO
I B = I E IC = O

= VO (1.25) 1.45
1
4
Then 3.5 = [VO (1.25) 1.45](200 ) + 0.7 + (VO 0.2 )
VO = 1.167 V
______________________________________________________________________________________
5.43

For 4.3 VI 5 Q is cutoff I C = 0


VO = 0
If Q reaches saturation, VO = 4.8
4.8
= 1.2 mA
4
5 0.7 VI
1.2
IB =
= 0.015 =
VI = 1.6
80
180
So VI 1.6, VO = 4.8
IC =

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.44

For VI 4.3, Q is off and VO = 0


101
5=
I C (1) + 0.2 + I C ( 4 ) I C = 0.958 mA
100
When transistor enters saturation,
(a)

VO = 3.832 V
I B = 0.00958 mA

101
5=
( 0.958 )(1) + 0.7 + ( 0.00958 )(180 ) + VI
100
VI = 5 0.7 0.9676 1.7244 VI = 1.61 V
For VI = 0, transistor in saturation
5 = I E (1) + 0.2 + I C ( 4 ) 5 = I C (1) + I B (1) + 0.2 + I C ( 4 )
5 = I E (1) + 0.7 + I B (180 ) 5 = I C (1) + I B (1) + 0.7 + I B (180 )
I E = IC + I B
4.8 = 5 I C + I B (1)
4.3 = 1I C + 181I B
I B = 4.8 5 I C
4.3 = I C + (181)( 4.8 5 I C )
904 I C = 864.5
I C = 0.956 mA
VO = 3.825 V

______________________________________________________________________________________
5.45
IC =

VCC VCE (sat ) 5 0.2


=
= 24 mA
0.2
RC

IC
24
= 20 I B =
= 1.2 mA
IB
20

V I V BE (on )
5 0.7
RB =
= 3.58 k
RB
1.2
______________________________________________________________________________________
IB =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.46
(a) V I = 0 , I B = I C = I E = 0, VO = 0
(b) V I = 2.5 V,
V I = I B R B + V BE (on ) + I E R E , and I E = (1 + )I B

Then I B =

V I V BE (on )
2.5 0.7
=
I B = 50.7 A
R B + (1 + )R E 10 + (51)(0.5)

I C = (50 )(0.0507 ) = 2.535 mA, I E = (51)(0.0507 ) = 2.586 mA


VO = I E R E = (2.586 )(0.5) = 1.293 V
(c) V I = 5 V, Transistor in saturation
2.8
= 5.6 mA
0 .5
V V BE (on ) VO 5 0.7 2.8
=
= 0.15 mA
IB = I
10
RB

VO = 2.8 V, I E =

I C = I E I B = 5.6 0.15 = 5.45 mA


______________________________________________________________________________________

5.47
IC =

VO 8.8
=
= 17.6 mA
RC 0.5

IC
17.6
= 25 I B =
= 0.704 mA
IB
25

9 V EB (on ) V I
9 0.7 5
RB =
= 4.69 k
RB
0.704
______________________________________________________________________________________
IB =

5.48
3 1.6
0.7
= 0.7 mA, I BQ =
I BQ = 5.833 A
120
2
V V BE (on )
1 0 .7
R B = BB
=
= 51.4 k
I BQ
0.005833

(a) I CQ =

(b) VO = 3.3 0.2 = 2.8 V, peak-to-peak


VO
3 1.6
=
= A = 4.67
(c)
V I
0.7 1.0
VO (max )
2.8
(d) V I (max ) =
=
= 0.6 V
4.667
A
So i = 0.6 V, peak-to-peak
______________________________________________________________________________________
5.49
I BQ =

I CQ

0.15
I BQ = 1.25 A
120

1+
121
= (0.15)
I EQ = I CQ
= 0.15125 mA

120

We have RTH = 200 k

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
VTH = I BQ RTH + V BE (on ) + I EQ R E = (0.00125 )(200 ) + 0.7 + (0.15125 )(2 ) = 1.2525 V
R2
1
VCC =
VTH =
RTH VCC
R
+
R
R
2
1
1
1
So 1.2525 =
(200)(2.5)
R1
R1 = 399 k and R 2 = 401 k
VCEQ = 2.5 I CQ R C I EQ R E = 2.5 (0.15 )(6 ) (0.15125 )(2 ) = 1.30 V

______________________________________________________________________________________
5.50
I CQ 0.20
1+
151
I CQ =
=
I BQ = 1.33 A
I EQ =
(0.20 ) = 0.2013 mA, I BQ =

150
150

V CC = I CQ R C + V CEQ + I EQ R E
2.5 = (0.20 )RC + 1.5 + (0.2013)(1) RC = 4 k

VTH = I BQ RTH + V BE (on ) + I EQ R E = (0.00133 )(120 ) + 0.7 + (0.2013 )(1) = 1.061 V

VTH =

1
1
RTH VCC 1.061 =
(120)(2.5)
R1
R1

So R1 = 283 k and R 2 = 208 k


______________________________________________________________________________________
5.51

RTH = R1 R2 = 20 15 = 8.57 k
R2
VTH =
R1 + R 2
VCC

15
VCC =
(10 ) = 4.29 V
15 + 20

I EQ
= I EQ R E + V EB (on ) +
RTH + VTH
1+

8.57
10 = I EQ (1) + 0.7 + I EQ
+ 4.29
101
10 0.7 4.29 5.01
=
I EQ = 4.62 mA
Then I EQ =
8.57
1.085
1+
101
I EQ
4.62
VB =
RTH + VTH =
(8.57 ) + 4.29 V B = 4.68 V
1+
101
______________________________________________________________________________________

5.52
(a)

RTH = 42 58 = 24.36 k
42
VTH =
(24 ) = 10.08 V
100
10.08 0.7
9.38
I BQ =
=
I BQ = 7.30 A
24.36 + (126)(10) 1284.36
I CQ = 0.913 mA, I EQ = 0.9202 mA
V CEQ = 14.8 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

(b)
R1 + 5% = 60.9, R2 + 5% = 44.1
RTH = 25.58 K
10.08 0.7
9.38
I BQ =
=
7.30 A
25.58 + 126 (10 ) 1285.58
I CQ = 0.912 mA
VCEQ = 14.81

I EQ = 0.919

R1 + 5% = 60.9, R2 5% = 39.90
RTH = 24.11 K
9.50 0.7
8.8
I BQ =
=
= 6.85 A
24.11 + (126 )(10 ) 1284.11
I CQ = 0.857 mA
VCEQ = 15.37 V

VTH = 10.08

VTH = 9.50

I EQ = 0.8635 mA

R1 5% = 55.1 K
R2 + 5% = 44.1 K
10.67 0.7
9.97
I BQ =
=
= 7.76 A
24.50 + 1260 1284.5
I CQ = 0.970 mA
I EQ = 0.978 mA
VCEQ = 14.22 V

R1 5% = 55.1 K
R2 5% = 39.90
10.08 0.7
9.38
I BQ =
=
= 7.31 A
23.14 + 1260 1283.14
I CQ = 0.914 mA
I EQ = 0.9211 mA
VCEQ = 14.79 V

RTH = 24.50 K

RTH = 23.14 K

VTH = 10.67 V

VTH = 10.08

So we have 0.857 I CQ 0.970 mA


14.22 VCEQ 15.37 V

______________________________________________________________________________________
5.53
(a) RTH = R1 R2 = 96 24 = 19.2 k
R2
24
VCC =
VTH =
(9 ) = 1.80 V
24 + 96
R1 + R 2
V V BE (on )
1.80 0.7
I BQ = TH
=
I BQ = 10.98 A
RTH + (1 + )R E 19.2 + (81)(1)

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
I CQ = I BQ = (80 )(0.01098 ) = 0.8782 mA, I EQ = (81)(0.01098 ) = 0.8892 mA
V CEQ = 9 (0.8782 )(5.25 ) (0.8892 )(1) = 3.50 V

1.80 0.7
I BQ = 7.846 A
19.2 + (121)(1)
= (120 )(0.007846 ) = 0.9415 mA, I EQ = (121)(0.007846 ) = 0.9494 mA

(b) I BQ =
I CQ

V CEQ = 9 (0.9415 )(5.25 ) (0.9494 )(1) = 3.108 V

0.9415 0.8782
For I CQ :
100% = 7.21%
0.8782

3.108 3.500
For VCEQ :
100% = 11.2%
3.500

______________________________________________________________________________________

5.54
(a)
I CQ I EQ = 0.4 mA
3
3
RC =
RC = 7.5 k ; RE =
RE = 7.5 k
0.4
0.4
9
R1 + R2
= 112.5 k
( 0.2 )( 0.4 )
R2
VTH =
(VCC ) = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE
R1 + R2
(112.5 R2 ) R2
RR
0.4
, I BQ =
= 0.004 mA
RTH = 1 2 =
112.5
100
R1 + R2
(112.5 R2 ) R2
9
R2
+ 0.7 + (101)( 0.004 )( 7.5 )
= ( 0.004 )
112.5
112.5

We obtain

R2 ( 0.08) = 0.004R2 3.56 105 R22 + 3.73

R = 48 k R1 = 64.5 k
From this quadratic, we find 2
(b) Standard resistor values:
Set R E = RC = 7.5 k and R1 = 62 k , R 2 = 47 k
Now RTH = R1 R 2 = 62 47 = 26.7 k
R2
47
VTH =
(VCC ) =
( 9 ) = 3.88 V
47 + 62
R1 + R2
VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE

So I BQ =

3.88 0.7
= 0.00406 mA
26.7 + (101)( 7.5 )

Then I CQ = 0.406 mA
VRC = VRE = ( 0.406 )( 7.5 ) = 3.05 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

5.55
(a)

RTH = R1 R2 = 12 2 = 1.714 k
R2
VTH =
R1 + R 2

(b)

2
(10 ) 5 = (10 ) 5 VTH = 3.571 V
14

VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE 5

3.57 = I BQ (1.714 ) + 0.7 + (101) I BQ ( 0.5 ) 5


I BQ =

5 0.7 3.571
0.729
=
13.96 A
1.714 + (101)( 0.5 ) 52.21

I CQ = 1.396 mA, I EQ = 1.410 mA

VCEQ = 10 (1.396 )( 5 ) (1.41)( 0.5 ) VCEQ = 2.32 V

(d)

RE = 0.5 + 5% = 0.525 K
I BQ =

RC = 5 + 5% = 5.25 K

0.729
13.32 A
1.714 + (101)( 0.525 )

I CQ = 1.332 mA

I EQ = 1.345 mA

VCEQ = 10 (1.332 )( 5.25 ) (1.345 )( 0.525 )


= 10 6.993 0.7061 VCEQ = 2.30 V
RE = 0.5 + 5% = 0.525 K
I CQ = 1.332 mA

RC = 5 5% = 4.75 K

I EQ = 1.345 mA

VCEQ = 10 (1.332 )( 4.75 ) (1.345 )( 0.525 )


= 10 6.327 0.7061 VCEQ = 2.97 V
RE = 0.5 5% = 0.475 K
I BQ =

RC = 5 + 5% = 5.25 K

0.729
14.67 A
1.714 + (101)( 0.475 )

I CQ = 1.467 mA

I EQ = 1.482 mA

VCEQ = 10 (1.467 )( 5.25 ) (1.482 )( 0.475 )


= 10 7.70175 0.70395 VCEQ = 1.59 V
RE = 0.5 5% = 0.475 K
I CQ = 1.467 mA

RC = 5 5% = 4.75 K

I EQ = 1.482 mA

VCEQ = 10 (1.467 )( 4.75 ) (1.482 )( 0.475 )


= 10 6.96825 0.70395 VCEQ = 2.33 V

______________________________________________________________________________________
5.56
(a) RTH = R1 R2 = 40 40 = 20 k
R2
VTH =
R1 + R 2

+ 40
V =
(2.5) = 1.25 V
40 + 40

V + = I EQ R E + V EB (on ) + I BQ RTH + VTH

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
V + V EB (on ) VTH
2.5 0.7 1.25
=
I BQ = 6.57 A
RTH + (1 + )R E
20 + (91)(0.7 )
= 0.5914 mA, I EQ = 0.5980 mA

So I BQ =
I CQ

V ECQ = 2.5 (0.5914 )(1.6 ) (0.5980 )(0.7 ) = 1.135 V

2.5 0.7 1.25


I BQ = 4.375 A
20 + (151)(0.7 )
= 0.6563 mA, I EQ = 0.6607 mA

(b) I BQ =
I CQ

V ECQ = 2.5 (0.6563 )(1.6 ) (0.6607 )(0.7 ) = 0.9874 V

0.6563 0.5914
For I CQ :
100% = 10.97%
0.5914

0.9874 1.135
For V ECQ :
100% = 13.0%
1.135

______________________________________________________________________________________

5.57
(a)

RTH = 36 68 = 23.5 k
36
VTH =
(10 ) = 3.46 V
36 + 68
3.46 0.7
I BQ =
= 0.00178 mA
23.5 + (51)(30)
I CQ = 0.0888 mA, I EQ = 0.0906 mA

VCEQ = 10 (0.0888 )(42 ) (0.0906 )(30 ) V CEQ = 3.55 V

(b)
R1 = 22.7, R2 = 12 K, RC = 14 K, RE = 10 K
RTH = 7.85 k
I BQ =

VTH = 3.46

3.46 0.7
= 0.00533 mA
7.85 + ( 51)(10 )

I CQ = 0.266 mA

I EQ = 0.272 mA

VCE = 10 ( 0.266 )(14 ) ( 0.272 )(10 )


VCE = 3.56 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.58
(a)
68
RTH = 36 68 = 23.5 k ; VTH =
(10 ) 5 = 1.54 V
36 + 68
5 = (51)I BQ (30 ) + 0.7 + I BQ (23.5) + 1.54

I BQ =

2.76
= 1.78 A I CQ = 0.0888 mA
1553.5
I EQ = 0.0906 mA

VECQ = 10 ( 0.0906 )( 30 ) ( 0.0888 )( 42 )


= 10 2.718 3.7296 VECQ = 3.55 V
(b)

RTH = 12 22.7 = 7.85 k


VTH = 1.54 V, R E = 10 k , RC = 14 k
5 = (51)I BQ (10 ) + 0.7 + I BQ (7.85 ) + 1.54
2.76
5.33 A, I CQ = 0.266 mA, I EQ = 0.272 mA
517.85
= 10 (0.272 )(10 ) (0.266 )(14 ) = 3.56 V

I BQ =
V ECQ

______________________________________________________________________________________
5.59
(a)

RTH = ( 0.1)(1 + ) RE = ( 0.1)(101)( 0.5 ) = 5.05 k


VTH =
I BQ =

Then

1
RTH VCC = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE
R1
I CQ

0.8
= 0.008 mA
100

1
( 5.05)(10 ) = ( 0.008)( 5.05) + 0.7 + (101)( 0.008 )( 0.5)
R1

or R1 = 44.1 k ,

44.1R2
= 5.05 R2 = 5.70 k
44.1 + R2

101
Now I EQ =
( 0.8 ) = 0.808 mA
100
VCC = I CQ RC + VCEQ + I EQ RE
10 = ( 0.8 ) RC + 5 + ( 0.808 )( 0.5 )
RC = 5.75 k

(b)

For

75 150

R2
5.7
VTH =
(VCC ) =
(10 ) = 1.145 V
5.7 + 44.1
R1 + R2
VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

= 75, I BQ =
For
Then

1.145 0.7
= 0.0103 mA
5.05 + ( 76 )( 0.5 )

I CQ = ( 75 )( 0.0103) = 0.775 mA

= 150, I BQ =
For
Then

1.145 0.7
= 0.00552 mA
5.05 + (151)( 0.5 )

I CQ = 0.829 mA

% Change =

I CQ
I CQ

0.829 0.775
100% % Change = 6.75%
0.80

For RE = 1 k
RTH = ( 0.1)(101)(1) = 10.1 k
1
1
VTH = RTH VCC = (10.1)(10 ) = ( 0.008 )(10.1) + 0.7 + (101)( 0.008 )(1)
R1
R1

(c)

which yields R1 = 63.6 k

And

63.6 R2
= 10.1 R2 = 12.0 k
63.6 + R2

R2
12
VTH =
(VCC ) =
(10 ) = 1.587 V
R1 + R2
12 + 63.6

Now
1.587 0.7
= 75, I BQ =
= 0.0103 mA
10.1 + ( 76 )(1)
For
I = 0.773 mA
So CQ
1.587 0.7
= 150, I BQ =
= 0.00551 mA
10.1 + (151)(1)
For
I = 0.826 mA
Then CQ
I CQ 0.826 0.773
=
100% % Change = 6.63%
% Change =
0.8
I CQ

______________________________________________________________________________________
5.60

VCC I CQ ( RC + RE ) + VCEQ

10 = ( 0.8 )( RC + RE ) + 5 RC + RE = 6.25 k

Let RE = 0.875 k

R = ( 0.1)(121)( 0.875 ) = 10.6 k


Then, for bias stable TH
0.8
I BQ =
= 0.00667 mA
120
1
(10.6 )(10 ) = ( 0.00667 )(10.6 ) + 0.7 + (121)( 0.00667 )( 0.875 )
R1

71.8R2
= 10.6 R2 = 12.4 k
71.8
+ R2
R
=
71.8
k

1
So
and

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
10
= 0.119 mA
+ 12.4
71.8
Then
This is close to the design specification.
______________________________________________________________________________________
IR

5.61
I CQ I EQ VCEQ

= VCC I CQ ( RC + RE )

6 = 12 I CQ ( 2 + 0.2 )

I CQ = 2.73 mA,

I BQ = 0.0218 mA

VCEQ = 6 V

VTH = I BQ RTH + V BE (on ) + (1 + )I BQ R E 6

R2
(12) 6 , RTH = R1 R 2
VTH =
R1 + R 2
Bias stable RTH = ( 0.1)(1 + ) RE = ( 0.1)(126 )( 0.2 ) = 2.52 k
1
VTH = ( RTH )(12 ) 6
R1
1
( 2.52 )(12 ) 6 = ( 0.0218)( 2.52 ) + 0.7 + (126 )( 0.0218)( 0.2 ) 6
R1

1
( 30.24 ) = 0.7549 + 0.5494
R1
R1 = 23.2 k,

23.2R 2
= 2.52
23.2 + R 2

R2 = 2.83 k

______________________________________________________________________________________
5.62
(a) RTH = (0.1)(1 + )R E = (0.1)(121)(0.2 ) = 2.42 k

1+
VCEQ = 6 I CQ RC +

2.8 = 6 I CQ (2.202 ) I CQ


R E = 6 I CQ (2.202 )

= 1.453 mA

Then I EQ = 1.465 mA, I BQ = 12.11 A

VTH = I BQ RTH + V BE (on ) + I EQ R E 3 = (0.01211)(2.42 ) + 0.7 + (1.465 )(0.2 ) 3

Then VTH = 1.978 V =

1
1
RTH (6) 3 =
(2.42)(6) 3
R1
R1

Which yields R1 = 14.2 k and R 2 = 2.92 k


(b) For R1 = (1.05)(14.2) = 14.91 k
R 2 = (0.95)(2.92 ) = 2.774 k

RTH = R1 R 2 = 2.34 k
2.774

VTH =
(6) 3 = 2.059 V
2.774 + 14.91
VTH = I BQ RTH + V BE (on ) + (1 + )I BQ R E 3

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
3 2.059 0.7
I BQ = 9.08 A
So I BQ =
2.34 + (121)(0.2)
I CQ = 1.090 mA, I EQ = 1.099 mA
V CEQ = 6 (1.09 )(2 ) (1.099 )(0.2 ) = 3.60 V

For R1 = (0.95)(14.2 ) = 13.49 k


R 2 = (1.05)(2.92 ) = 3.066 k

RTH = R1 R 2 = 2.50 k
3.066

VTH =
(6 ) 3 = 1.889 V
3.066 + 13.49
3 1.889 0.7
I BQ =
I BQ = 15.39 A
2.50 + (121)(0.2)
I CQ = 1.847 mA, I EQ = 1.863 mA

V CEQ = 6 (1.847 )(2 ) (1.863)(0.2 ) = 1.933 V

So 1.09 I CQ 1.847 mA
1.933 VCEQ 3.60 V

______________________________________________________________________________________
5.63

Let

VCEQ VCC I CQ ( RC + RE )
5 = 12 3 ( RC + RE ) RC + RE = 2.33 k

RE = 0.333 k

R = 2 k
and C
= 100

Nominal value of
RTH = ( 0.1)(1 + ) RE = ( 0.1)(101)( 0.333) = 3.36 k
3
I BQ =
= 0.03 mA
100
1
1
VTH = RTH (12 ) 6 = ( 3.36 )(12 ) 6
R1
R1

Then VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE 6

1
( 3.36 )(12 ) 6 = ( 0.03)( 3.36 ) + 0.7 + (101)( 0.03)( 0.333) 6
R1
which yields R1 = 22.3 k and R2 = 3.96 k
R2
3.96
Now VTH =
(12 ) 6 =
(12 ) 6 or VTH = 4.19 V
3.96 + 22.3
R1 + R2
For = 75, VTH = I BQ RTH + VBE ( on) + (1 + ) I BQ RE 6
VTH + 6 0.7
4.19 + 6 0.7
I BQ =
=
= 0.0387 mA I C = 2.90 mA
RTH + (1 + ) RE 3.36 + ( 76 )( 0.333)

= 150, I BQ =
For

4.19 + 6 0.7
= 0.0207 mA
3.36 + (151)( 0.333)

I = 3.10 mA
Then C
Specifications are met.
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.64

1+
R E
(a) V + = V ECQ + I CQ RC +

3.3 = 1.5 + I CQ (3.022 ) I CQ = 0.5956 mA


I BQ = 6.618 A, I EQ = 0.6022 mA

V + = I EQ R E + V EB (on ) + I BQ RTH + VTH

3.3 = (0.6022 )(2 ) + 0.7 + (0.006618)(2.4 ) + VTH

So VTH = 1.380 V =

1
1
RTH V + =
(2.4)(3.3)
R1
R1

Which yields R1 = 5.74 k and R 2 = 4.12 k

V + V EB (on ) VTH 3.3 0.7 1.38


=
I BQ = 4.61 A
RTH + (1 + )R E
2.4 + (131)(2 )
= 0.60 mA, I EQ = 0.6045 mA

(b) I BQ =
I CQ

V ECQ = 3.3 (0.60 )(1) (0.6045 )(2 ) = 1.49 V

______________________________________________________________________________________
5.65

I CQ = 4.8 mA I EQ = 4.84 mA
VCEQ = VCC I CQ RC I EQ RE
6 = 18 ( 4.8 )( 2 ) ( 4.84 ) RE RE = 0.496 k
RTH = ( 0.1)(1 + ) RE = ( 0.1)(121)( 0.496 ) = 6.0 k
VTH = I BQ RTH + VBE ( on ) + (1 + ) I BQ RE
I BQ = 0.040 mA
1
1
VTH = RTH VCC = ( 6.0 )(18 )
R1
R1
1
( 6.0 )(18 ) = ( 0.04 )( 6.0 ) + 0.70 + (121)( 0.04 )( 0.496 )
R1
1
(108) = 3.34
R1
R1 = 32.3 k,

32.3 R2
= 6.0
32.3 + R2

R2 = 7.37 k

______________________________________________________________________________________
5.66

For I EQ I CQ , RC + R E =

VCC VCEQ
I CQ

2.5 1.6
= 4.5 k
0.2

So R E = 0.5 k
For = 100

RTH = (0.1)(101)(0.5) = 5.05 k


0.2
I BQ = 2 A, I EQ = 0.202 mA
100
= I BQ RTH + V BE (on ) + I EQ R E = (0.002 )(5.05 ) + 0.7 + (0.202 )(0.5) = 0.8111 V

I BQ =
VTH

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
VTH =

1
1
RTH VCC 0.8111 =
(5.05)(2.5)
R1
R1

So R1 = 15.6 k and R 2 = 7.47 k


For = 80 ,

VTH V BE (on )
0.8111 0.7
=
I BQ = 2.439 A, I CQ = 0.1951 mA
RTH + (1 + )R E 5.05 + (81)(0.5)
For = 120 ,
I BQ =

0.8111 0.7
I BQ = 1.695 A, I CQ = 0.2034 mA
5.05 + (121)(0.5)
Design is valid
______________________________________________________________________________________
I BQ =

5.67
I CQ = 1 mA I EQ = 1.017 mA
VCEQ = VCC I CQ RC I EQ RE

5 = 15 (1)( 5 ) (1.017 ) RE RE = 4.92 k


Bias stable: RTH = ( 0.1)(1 + ) RE = ( 0.1)( 61)( 4.92 ) = 30.0 k
1
= 0.0167 mA
60
1
= RTH VCC = I BQ RTH + VBE ( on ) + I EQ RE
R1

I BQ =
VTH

1
( 30.0 )(15 ) = ( 0.0167 )( 30.0 ) + 0.70 + (1.017 )( 4.92 )
R1
1
( 448.5) = 6.197
R1
R1 = 72.5 k,

72.5 R2
= 30.0
72.5 + R2

R2 = 51.2 k

= 45
Check: For
51.2
VTH =
(15 ) = 6.21V
51.2 + 72.5
V VBE ( on )
6.21 0.7
I BQ = TH
=
= 0.0215 mA
RTH + (1 + ) RE 30 + ( 46 )( 4.92 )
I CQ = 0.967 mA,

Check: For
I BQ =

= 75

I C
= 3.27%
IC

6.21 0.7
= 0.0136 mA
30.0 + ( 76 )( 4.92 )

I C
= 2.31%
IC
Design criterion is satisfied.
______________________________________________________________________________________
I CQ = 1.023 mA,

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.68
(a)

VCC I CQ ( RC + RE ) + VCEQ

3 = ( 0.1)( 5 RE + RE ) + 1.4 RE = 2.67 k


100
= 0.833 A
120
= ( 0.1)(1 + ) RE = ( 0.1)(121)( 2.67 ) = 32.3 k

RC = 13.3 k , I BQ =
RTH

VTH =

1
1
RTH VCC = ( 32.3)( 3)
R1
R1

= I BQ RTH + VBE ( on ) + (1 + ) I BQ RE

= ( 0.000833)( 32.3) + 0.7 + (121)( 0.000833 )( 2.67 )


which gives R1 = 97.3 k , and R2 = 48.4 k

(b)
IR

3
3
=
20.6 A
R1 + R2 97.3 + 48.4

I CQ = 100 A

P = ( I CQ + I R ) VCC = (100 + 20.6 )( 3)


or P = 362 W

______________________________________________________________________________________
5.69
IE =

5 VE 5
= = 1.67 mA
RE
3

RTH = R1 || R2 = ( 0.1)(1 + ) RE = ( 0.1)(101)( 3) = 30.3 k


R2
1
VTH =
( 4 ) 2 = RTH ( 4 ) 2
R1
R1 + R2
I EQ
= 0.0165 mA
I BQ =
1+
5 = I EQ RE + VEB ( on ) + I B RTH + VTH
5 = (1.67 )( 3) + 0.7 + ( 0.0165 )( 30.3) +
0.80 =

1
( 30.3)( 4 ) 2
R1

1
( 30.3)( 4 ) R1 = 152 k
R1

152 R2
= 30.3 R2 = 37.8 k
152 + R2
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.70
a.

RTH = R1 R2 = 10 20 = 6.67 k
R2
VTH =
R1 + R 2

b.

20
(10) 5 =
(10 ) 5 = 1.67 V
20 + 10

10 = (1 + ) I BQ RE + VEB ( on ) + I BQ RTH + VTH


I BQ =

10 0.7 1.67 7.63


=
I BQ = 0.0593 mA
6.67 + ( 61)( 2 ) 128.7

I CQ = 3.56 mA, I EQ =3.62 mA


VE = 10 I EQ RE = 10 ( 3.62 )( 2 )
VE = 2.76 V
VC = I CQ RC 10 = ( 3.56 )( 2.2 ) 10
VC = 2.17 V

______________________________________________________________________________________
5.71

V + V I CQ ( RC + RE ) + VECQ

20 = ( 0.5 )( RC + RE ) + 8 ( RC + RE ) = 24 k

Let
Let

RE = 10 k

RC = 14 k

then

= 60 from previous problem.


RTH = ( 0.1)(1 + ) RE = ( 0.1)( 61)(10 )

Or RTH = 61 k
0.5
I BQ =
= 0.00833 mA
60
R2
1
VTH =
(10 ) 5 = RTH 10 5
R1
R1 + R2

Now 10 = (1 + ) I BQ RE + VEB ( on ) + I BQ RTH + VTH


10 = ( 61)( 0.00833) (10 ) + 0.7 + ( 0.00833)( 61) +

1
( 61)(10 ) 5
R1

Then R1 = 70.0 k and R2 = 474 k


10
10
=
18.4 A
R1 + R2 70 + 474
40 A
So the
current limit is met.
______________________________________________________________________________________
IR

5.72

1+
(a) V ECQ = V + V I CQ RC +

R E

81
2.7 = 5 (0.15) RC + (2 ) RC = 13.3 k
80

I EQ = 0.1519 mA, I BQ = 1.875 A


RTH = (0.1)(81)(2 ) = 16.2 k

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
V + = I EQ R E + V EB (on ) + I BQ RTH + VTH

2.5 = (0.1519 )(2 ) + 0.7 + (0.001875)(16.2) + VTH VTH = 1.466 V

VTH =

1
1
RTH (5) 2.5 1.466 =
(16.2)(5) 2.5
R1
R1

So R1 = 20.4 k and R 2 = 78.7 k


(b) For = 60
V + VTH V EB (on ) 2.5 1.466 0.7
=
I BQ = 2.417 A
RTH + (1 + )R E
16.2 + (61)(2 )
= 0.145 mA , I EQ = 0.1474 mA

I BQ =
I CQ

V ECQ = 5 (0.145 )(13.3) (0.1474 )(2 ) = 2.777 V

For = 100

2.5 1.466 0.7


I BQ = 1.531 A
16.2 + (101)(2)
= 0.1531 mA, I EQ = 0.1546 mA

I BQ =
I CQ

V ECQ = 5 (0.1531)(13.3) (0.1546 )(2 ) = 2.655 V

0.1531 0.145
For I CQ :
100% = 5.4%
0.15

2.655 2.777
For V ECQ :
100% = 4.52%
2.70

____________________________________________________________________________________

5.73
a.
RTH = 500 500 70 = 250 70 = 54.7 k

5 VTH 3 VTH VTH ( 5)


+
=
500
500
70
5
3
5
1
1
1
+

= VTH
+
+ 0.0554 = VTH (0.0183)
500 500 70
500 500 70

VTH = 3.03 V

b.
I BQ =
=

VTH VBE ( on ) ( 5 )
RTH + (1 + ) RE

3.03 0.7 + 5
54.7 + (101)( 5 )

I BQ = 0.00227 mA
I CQ = 0.227 mA, I EQ = 0.229

VCEQ = 20 ( 0.227 )( 50 ) ( 0.229 )( 5 )


VCEQ = 7.51 V
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.74
RE

VE
1.5
=
= 1.87 k
I CQ 0.8

10 = (0.8)RC + 4 + 1.5 RC = 5.63 k

RTH = (0.1)(1 + )R E = (0.1)(121)(1.87 ) = 22.6 k


I BQ =

0.8
I BQ = 6.67 A
120

VTH = I BQ RTH + V BE (on ) + I EQ R E =

1
RTH VCC
R1

(0.00667 )(22.6) + 0.7 + (0.807 )(1.87 ) =

1
(22.6)(10)
R1

which yields R1 = 95.8 k and R 2 = 29.6 k


______________________________________________________________________________________
5.75

I CQ = 50 A, I BQ = 0.625 A, I EQ = 50.6 A

(a)
1
= 19.8 K
0.0506
5 = ( 0.050 ) RC + 5 + ( 0.0506 )(19.8 ) 5
RE =

RC = 80 K

RTH = R1 R 2 , Design bias stable circuit

RTH = (0.1)(51)(19.8) = 101 k

R2
1
(10 ) 5 =
RTH (10 ) 5
VTH =
R1
R1 + R 2
1
So
(101) (10 ) 5 = I BQ (101) + 0.7 + ( 0.0506 )(19.8) 5
R1

1
(1010 ) = 0.0631 + 0.7 + 1
R1
R1 = 573 K

573 R2
= 101
573 + R2

R2 = 123 K
(b)
RTH = 101 K, VTH = 3.23 V

VTH = I BQ RTH + 0.7 + (121)(19.8 ) I BQ 5

1.07 = I BQ (101 + 2395.8 ) I BQ = 0.429 A


I CQ = 0.0514 mA, I EQ = 0.0519 mA

VCEQ = 10 ( 0.0514 )( 80 ) ( 0.0519 )(19.8 )


= 10 4.11 1.03 VCEQ = 4.86 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.76

(a) R E
V CEQ

0.7
0.5
= 1.4 k , I BQ =
I BQ = 4.167 A
0.5
120
= 6 I CQ R C 0.7

2.5 = 6 (0.5)RC 0.7 RC = 5.6 k


RTH = (0.1)(121)(1.4 ) = 16.9 k
VTH = I BQ RTH + V BE (on ) + (1 + )I BQ R E 3

VTH = (0.004167 )(16.9 ) + 0.7 + (121)(0.004167 )(1.4 ) 3 = 1.5237 V


1
1
RTH (6 ) 3 1.5237 =
(16.9)(6) 3
R1
R1

VTH =

which yields R1 = 68.7 k and R 2 = 22.4 k


(b) For standard resistor values:
Let R E = 1.5 k , RC = 5.6 k , R1 = 68 k , R 2 = 22 k

RTH = R1 R 2 = 68 22 = 16.62 k
R2
22
(6) 3 =
VTH =
(6 ) 3 = 1.533 V
R
+
R
22 + 68
2
1
3 + VTH V BE (on )
3 1.533 0.7
I BQ =
=
I BQ = 3.87 A
RTH + (1 + )R E
16.62 + (121)(1.5)
I CQ = 0.4646 mA, I EQ = 0.4684 mA
V CEQ = 6 (0.4646 )(5.6 ) (0.4684 )(1.5) = 2.70 V

______________________________________________________________________________________
5.77
0.7
63
= 7 k , RC + R E =
= 30 k , RC = 23 k
0.1
0.1
= (0.1)(1 + )R E = (0.1)(111)(7 ) = 77.7 k

(a) R E
RTH

I BQ =

0 .1
I BQ = 0.909 A, I EQ = 0.1009 mA
110

V + = I EQ R E + V EB (on ) + I BQ RTH + VTH

3 = (0.1009 )(7 ) + 0.7 + (0.000909 )(77.7 ) + VTH , VTH = 1.523 V

VTH =

1
1
RTH (6 ) 3 1.523 =
(77.7 )(6) 3
R1
R1

which yields R1 = 103 k and R 2 = 316 k

V + V EB (on ) VTH
3 0.7 1.523
=
I BQ = 0.685 A
RTH + (1 + )R E
77.7 + (151)(7 )
= 0.1027 mA, I EQ = 0.1034 mA

I BQ =
I CQ

V ECQ = 6 (0.1027 )(23) (0.1034 )(7 ) = 2.914 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.78
(a) V ECQ = 18 I CQ R C V RE
6 = 18 (1.2 )RC 1.5 RC = 8.75 k

1.2
76
I EQ = (1.2 ) = 1.216 mA, I BQ =
I BQ = 16 A
75
75

1.5
RE =
= 1.234 k
1.216
RTH = (0.1)(1 + )R E = (0.1)(76 )(1.234 ) = 9.375 k

V + = I EQ R E + V EB (on ) + I BQ RTH + VTH

9 = (1.216 )(1.234 ) + 0.7 + (0.016 )(9.375) + VTH VTH = 6.65 V

VTH =

1
(RTH )(18) 9 6.65 = 1 (9.375)(18) 9
R1
R1

which yields R1 = 10.78 k and R 2 = 71.8 k


Set RC = 9.1 k , R E = 1.2 k , R1 = 11 k , R 2 = 68 k

RTH = R1 R2 = 11 68 = 9.47 k
R2
68
(18) 9 =
VTH =
(18) 9 = 6.494 V
68 + 11
R1 + R 2
V + V EB (on ) VTH
9 0.7 6.494
I BQ =
=
I BQ = 17.94 A
RTH + (1 + )R E
9.47 + (76 )(1.2 )
I CQ = 1.345 mA, I EQ = 1.363 mA

V ECQ = 18 (1.345 )(9.1) (1.363)(1.2 ) = 4.12 V

______________________________________________________________________________________
5.79

RTH = R1 R2 = 100 40 = 28.6 k


R2
40
(10 ) =
VTH =
(10 ) = 2.86 V
R
+
R
40 + 100
2
1
V V BE (on )
2.86 0.7
=
I B1 = TH
RTH + (1 + )R E1 28.6 + (121)(1)
I B1 = 0.0144 mA, I C1 = 1.73 mA, I E1 = 1.75 mA
10 VB 2
= I C1 + I B 2
3
VB 2 VBE ( on ) ( 10 )
IE2 =
5
10 VB 2
VB 2 0.7 + 10
= I C1 +
3
(121)( 5)

10
9.3
1
1.73
= VB 2 +

3
605
3 (121)( 5 )

1.588 = VB 2 ( 0.335) VB 2 = 4.74 V

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.74 0.7 ( 10 )
IE2 =
I E 2 = 2.808 mA
5
I B 2 = 0.0232 mA
I C 2 = 2.785 mA
VCEQ1 = 4.74 (1.75 ) (1) VCEQ1 = 2.99 V
VCEQ 2 = 10 ( 4.74 0.7 ) VCEQ 2 = 5.96 V

______________________________________________________________________________________
5.80

VE1 = 0.7
I R1 =
VE 2

0.7 ( 5 )

= 0.215 mA
20
= 0.7 0.7 = 1.4

IE2 =

1.4 ( 5 )
1

I E 2 = 3.6 mA
I B 2 = 0.0444 mA
I C 2 = 3.56 mA

I E1 = I R1 + I B 2 = 0.215 + 0.0444
I E1 = 0.259 mA
I B1 = 0.00320 mA
I C1 = 0.256 mA

______________________________________________________________________________________
5.81

V B1 = V RE + V BE (on ) = 0.5 + 0.7 = 1.2 V


1.2
= 60 k
0.020
0.5
RE =
= 2.5 k
0.2
V B 2 = V BE (on ) + VCE + V RE = 0.7 + 1.2 + 0.5 = 2.4 V
R3 =

R2 =

V B 2 V B1 2.4 1.2
=
= 60 k
I R2
0.020

R1 =

V + V B 2 5 2.4
=
= 130 k
0.020
I R1

VC 2 = 2VCE + V RE = 2(1.2) + 0.5 = 2.9 V

V + VC 2 5 2.9
=
= 10.5 k
0.20
I C2
______________________________________________________________________________________
RC =

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
5.82
RTH = 40 80 = 26.67 k
40
VTH =
(9 ) = 3 V
40 + 80
VTH V BE (on )
3 0 .7
=
I B1 = 8.56 A
I B1 =
RTH + (1 + n )R E1 26.67 + (121)(2)

I C1 = 1.027 mA, I E1 = 1.036 mA


9 V C1
+ I B 2 = I C1
2
9 = I E 2 (0.1) + V EB (on ) + VC1 I B 2 =

So

9 0.7 VC1 8.3 VC1


=
1 + p (0.1)
8.1

9 VC1 8.3 VC1


+
= 1.027 VC1 = 7.214 V
2
8.1
8.3 7.214
I B2 =
= 0.134 mA
8.1
I C 2 = 10.73 mA, I E 2 = 10.86 mA

V E1 = I E1 R E1 = (1.036 )(2 ) = 2.072 V

VCE1 = VC1 V E1 = 7.214 2.072 = 5.14 V

V EC 2 = 9 (10.86 )(0.1) (10.73)(0.2 ) = 5.77 V


______________________________________________________________________________________

5.83

RTH = R1 R 2 = 50 100 = 33.3 k


R2
100
(10 ) 5 =
VTH =
(10 ) 5 = 1.67 V
100 + 50
R1 + R 2
5 = I E1 R E1 + V EB (on ) + I B1 RTH + VTH
101
I E1 =
( 0.8 ) = 0.808 mA
100
I B1 = 0.008 mA

5 = ( 0.808 ) RE1 + 0.7 + ( 0.008 )( 33.3) + 1.67

RE1 = 2.93 k

VE1 = 5 ( 0.808 )( 2.93) = 2.63 V


VC1 = VE1 VECQ1 = 2.63 3.5 = 0.87 V
VE 2 = 0.87 0.70 = 1.57 V
IE2 =

1.57 ( 5 )
RE 2

= 0.808 RE 2 = 4.25 k

VCEQ 2 = 4 VC 2 = 1.57 + 4 = 2.43 V


5 2.43
RC 2 =
RC 2 = 3.21 k
0.8

Microelectronics: Circuit Analysis and Design, 4th edition


Chapter 5
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
I RC1 = I C1 I B 2 = 0.8 0.008 = 0.792 mA
0.87 ( 5 )

RC1 = 5.21 k
0.792
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RC1 =

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