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TIP41 Series

NPN Silicon Power Transistor


P b Lead(Pb)-Free
COLLECTOR 2 BASE 1
1 2

FEATURES:
* Medium Power Linear Switching Applications

3 EMITTER

1. BASE 2. COLLECTOR 3. EMITTER

TO-220

MAXIMUM RATINGS (TA=25 unless otherwise noted)


Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature TIP41 40 40 TIP41A 60 60 5 6 2 150 -55-150 TIP41B 80 80 TIP41C 100 100 Units V V V A W

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


Parameter TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Symbol Test conditions MIN 40 60 80 100 40 60 80 100 5 MAX UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=1mA, I E=0

Collector-emitter breakdown voltage

V(BR)CEO

IC=30mA, I B=0

Emitter-base breakdown voltage TIP41 TIP41A TIP41B TIP41C TIP41/41A TIP41B/41C

V(BR)EBO

IE= 1mA, I C=0 VCB=40V, I E=0 VCB=60V, I E=0 VCB=80V, I E=0 VCB=100V, I E =0 VCE=30V, I B=0 VCE=60V, I B=0 VEB=5V, I C=0 VCE=4V, I C=0.3A VCE=4V, I C=3A IC=6A, IB =0.6A VCE=4V, IC =6A VCE=10V, IC =0.5A f = 1MHz

Collector cut-off current

ICBO

0.4

mA

Collector cut-off current Emitter cut-off current

ICEO IEBO hFE(1)

0.7 1 30 15 75 1.5 2 3

mA mA

DC current gain

hFE(2) VCE (sat) VBE(on) fT

Collector-emitter saturation voltage Base-emitter voltage Transition Frequency

V V MHz

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TIP41 Series
Typical Characteristics
TIP41/41A/41B/41C

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12-Aug-10

TIP41 Series
TO-220 Outline Dimensions
unit:mm

D F

A C1

TO-220
Dim A A1 B B1 C C1 D E E1 G G1 F H L L1

H E1 E

B1 B L

L1

A1

G G1

M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73

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12-Aug-10