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1. (a) Explain in detail the p-well process for CMOS fabrication indicating the masks
used.
(b) Draw a neat sketch of CMOS inverter fabricated using n-well process. [12+4]
2. (a) Derive the relation ship between drain to source current Ids verses drain to
source voltage Vds in non saturated and saturated region.
(b) Draw graphs of Ids vs Vds for depletion and enhancement mode MOS tran-
sistors. [8+8]
(a) PLDs
(b) CPLDs
(c) FPGAs
(d) PALs [16]
4. Explain about the design approaches for full custom and semi custom Devices [16]
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Code No: NR411905 NR
8. (a) Prove that the combination of BJT and MOS technology offers the best per-
formance in Analog VLSI design.
(b) Draw the block diagram of D/A converter suitable for VLSI Analog Circuits
and explain. [8+8]
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