Light Emitting Diode Having A First GaN Layer and A First Semiconductor Layer Each Having A Predetermined Thickness and Fabrication Method Therof (US Patent 7884388)
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U.S. patent 7884388: Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof. Granted to Kim on 2011-02-08 (filed 2009-11-23) and assigned to LG Innotek Co., Ltd. Currently involved in at least 1 patent litigation: LG Electronics Inc. et. al.. v. OSRAM GMBH, et. al.. (Delaware). See http://news.priorsmart.com for more info.
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Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof (US patent 7884388)
U.S. patent 7884388: Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof. Granted to Kim on 2011-02-08 (filed 2009-11-23) and assigned to LG Innotek Co., Ltd. Currently involved in at least 1 patent litigation: LG Electronics Inc. et. al.. v. OSRAM GMBH, et. al.. (Delaware). See http://news.priorsmart.com for more info.
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Public Domain
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Scarica in formato PDF, TXT o leggi online su Scribd
0 valutazioniIl 0% ha trovato utile questo documento (0 voti)
161 visualizzazioni9 pagine
Light Emitting Diode Having A First GaN Layer and A First Semiconductor Layer Each Having A Predetermined Thickness and Fabrication Method Therof (US Patent 7884388)
U.S. patent 7884388: Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof. Granted to Kim on 2011-02-08 (filed 2009-11-23) and assigned to LG Innotek Co., Ltd. Currently involved in at least 1 patent litigation: LG Electronics Inc. et. al.. v. OSRAM GMBH, et. al.. (Delaware). See http://news.priorsmart.com for more info.
Copyright:
Public Domain
Formati disponibili
Scarica in formato PDF, TXT o leggi online su Scribd