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The model is in general considered to be oversimplified. The lack of a systematic approach ET AL-oxide-semiconductor field-effect transistors to determining the empirical parameters imposes another serious limitation in using the model. Compared with bipolar tranempirical or physical, that can predict the noise power in sistors, MOS transistors offer some unique features, such as high input resistance and low power dissipation.
The model is in general considered to be oversimplified. The lack of a systematic approach ET AL-oxide-semiconductor field-effect transistors to determining the empirical parameters imposes another serious limitation in using the model. Compared with bipolar tranempirical or physical, that can predict the noise power in sistors, MOS transistors offer some unique features, such as high input resistance and low power dissipation.
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The model is in general considered to be oversimplified. The lack of a systematic approach ET AL-oxide-semiconductor field-effect transistors to determining the empirical parameters imposes another serious limitation in using the model. Compared with bipolar tranempirical or physical, that can predict the noise power in sistors, MOS transistors offer some unique features, such as high input resistance and low power dissipation.
Copyright:
Attribution Non-Commercial (BY-NC)
Formati disponibili
Scarica in formato PDF, TXT o leggi online su Scribd