21.a)Explain the electron hole concentration at equilibrium.

16

(OR)

b)Explain in detail about the large signal model. 16

22.a)Explain the minority carrier distribution in the BJT. 16

(OR)

b)Explain the Eber-Molls model 16

23.a)Explain the NMOS and PMOS 16

(OR)

b)Expplain the CMOS models in SPICE 16

24.a)Explain the static parameter measurement technique. 16

(OR)

b)Explain the measurement of capacitance. 16

25.a)Explain the rate equations int the opto-electronic device 16

(OR)

b)Explain in detail about the LASER diode. 16

21.a)Explain the mobility and resistivity in silicon. 16

(OR)

b)Explain the static model for the ideal diode. 16

22.a)Explain the terminal current in the BJT. 16

(OR)

b)Explain the Gummel-poon model. 16

23.a)Explain in detail about the second order effect in MOSFET. 16

(OR)
 b)Explain in detail about the depletion type MOSFET. 16

24.a)Explain the large signal parameter measurement techniques. 16

(OR)

b)Explain long and short channel parameters. 16

25.a)Expain the numerical techniques in opto electronic device. 16

(OR)

b)Explain in detail about the photo detectors. 16

21.a)Explain the direct and indirect recombination of electron and holes.

(OR)

b)Explain about the noise sources.

22.a)Expalin the temperature and area effect in BJT.

(OR)

b)Explain the transistor action and switching.

23.a)Explain the temperature short channel and narrow width effect.

(OR)

b)Explain the models for enhancement.

24.a)Explain in detail about the Bipolar junction transistor parameter.

(OR)

b)Explain the Gummel plots in detail.

25.a)Explain the equivalent circuits in opto electronic device.

(OR)

b)Explain the modeling of LEDs.