Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials.MOS FIELD EFFECT POWER TRANSISTOR 2SK1794 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ‘The 2SK1794 is N-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES © Low On-state Resistance Rosiont $ 2.8 O (Vas = 10 V, lo = 3A} © Lowi Cies = 1.000 pF TYP. © Built-in G-S Gate Protection Diode ‘© High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ts = 25 °C) Drain to Source Voltage Voss 900 Gate to Source Voltage Voss #30 Drain Current (DC) loon «860A Drain Current (pulse) lopuee 412A Total Power Dissipation (Te = 25 °C) Pr 100 = W Channel Temperature Tes 1690 °c | Storage Temperature Tap -85 to +150 °C Single Avalanche Current bst* 60 Single Avalanche Energy Est 22m *+ PWS 10 us, Duty Cycle 51% ** Starting Tas = 25 °C, Ra = 25 02, Ves = 20V-+0 PACKAGE DIMENSIONS {in millimeters) 930202 ss7max, /S +a 10 60, 205 MAK, 187204 19MIN, 3AMAX, dezoed 55, 10202 a6. | 28201, Gate rain Fin (Drain) Draig [+ b Boxy ose oe | Gate protecton date. Source (S) Document No, To-2440 Dete Pubhod August 7059 M Printedin Japan| (© NEC Coreretion 1999NEC 2SK1794 ELECTRICAL CHARACTERISTICS (Ts = 25 °C) (CHARACTERISTIC Syweou] MIN. | TWP. | MAX | UNIT | TESTCONDITIONS Drain to Source On-state Resistance Ronn 24 | 28 | @ | Vor=10V,b=3A Gate to Source Cutoff Voltage Veeun | 25 35 | V_| Von 10V,lo= 1 ma Forward Transfer Admittance Tw! | 20 | 60 S| Von 20V,b=3A Drain Leakage Current Tom 100 [ua Gato 10 Source Leakage Current lowe Ho | aA input Capacitence Gu 7000 mF Output Capacitance Com 170 pF Reverse Transfer Capacitance Cn a °F Ture-On Delay Time tan 20 ne Rise Time t 30 ns TurmOff Delay Time tw oo ns Fall Time & 20 ns Total Gate Charge Os 2 ne Gate to Source Charge On 10 ne ‘Gate 0 Drain Charge eo ” ac Diode Forward Voltage Veo 03 Vv [heb Av Reverse Recovery Time a 680 ms |yaea averse Recovery Charge or 48 16 _| dist = 50 Als Test Circuit 1: Avalanche Capability Test Circuit 2: Swite Ro= 250 L aa i 190 % PG i 2 a. vos=200V@ $500 - + Siaring Ta Gate Charge ATYPICAL CHARACTERISTICS (Ts dT ~Percontage of Rated Power ~ % r= Total Power Dissipation = W lo~ Drain Curent 25°C) DERATING FACTOR OF FORWARD BIAS 2SK1794 SRRECGAANG ARE FORWARD BIAS SAFE OPERATING AREA 109 109 80 4 10 é cy) 3 © a, ~» ez , aa 0204 e B50 T4860 1 io 100 To oe Vox Drain to Sauce Votape-V TOTAL POWER DSSPATION ve, RAIN CURRENT vs a EMRE BRAIN FO BERR ourace : | 7 Vos = 10, Md 129 s 1 i 0 — | : 35 - a = a2 bea 2 » : 02040 Ba B60 T9480 ee Te Case Temperature —*C ‘TRANSFER CHARACTERISTICS Ora T0 Pulsed! Oe 2 Oe anos ‘Vos ~ Gate to Source Voltage -V Vos ~ Drain to Source Votage -VTransient Thermal Resistance ~°CW I yul= Forwacd Transfer Admitance ~S tate Resistance - sma = Drain to Source On 10) on 0.01 10H 2SK1794 ‘TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10071 tm FORWARD TRANSFER ADMITTANCE vs, DRAIN CURRENT rom 100m 1 10 Single Puse| Too PW Pulse Width—s vex = 20 Pused sin = Drain to Source On-State Resistance ~O DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 Pulsed ane eee EASED eauegemne 8 - > Se — : B ao : ! eCOosS e Fy T ieg al i 8 bs 3 al 3 : bos 1 1 05) ay i uu 3 gllo=ima Br T 10 100 = Ys 25 0 25 80 75 100 128 150 lo~Drain Curent ~ A, ‘Ta\~ Channel Temperature ~NEC 2SK1794 DRAIN TO SOURCE ON.STATE RESISTANCE SOURCE T0 DRAIN DIODE J __vs. CHANNEL TEMPERATURE FORWARD VOLTAGE 80 ‘ 2 ©hamey Same 8 roleas0a <0 Pulsed * € 60 3 8 50] 3 2 40) A 5 8 eA B30 & 2 a i 2 ; B10 2 a4 af fs =10V| fsa 0507500 TE T60 O02 oa 608 10 1214 « Ta = Channel Temperature - °C ‘Vso - Source to Drain Voltage - V CAPACITANCE ve, ORAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS : 1000 — ., 20 : Nas 2 % § 100 & E zg ‘000 2 a g 8 = S 100 : 4 = go i Cin . Ves = 10V-30 é 7 Resi0a, 10 4 i 10 100 000 7 7 70 Vor Drin to Source Votage -V lo= Drain Curent =A REVERSE RECOVERY TIME vs DYNAMIC INPUT CHARACTERISTICS REVERSE DRAIN CURRENT 600 2 3000 b at = 50 A = 5 * faa g Vos = 0 3 500 Woe,= 480. Ves 8 1 000 i ‘ove! i: $400] 60 we 8 SF 200 ce gam hee 6 & gm 4 100 vs eo ° 01020 304060 60 (0, Gate Charge - ac of q 1 10 30 lr ~ Diode Forward Current =NEC las ~Single Avalanche Current -A 50 10 on SINGLE AVALANCHE CURRENT vs, INDUCTIVE LOAD 100) Wes= 20V 0, [Stating Ta = 25°°C 1m 10m LL inductive load —H 700m Eas~ Single Avalanche Energy ~ mJ 2SK1794 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 30 T 25| - 20 22m 16 10 5 Ql S80 75100125180 Starting Ta ~ Starting Channel Temperature 775 *Reference ‘Application note name No. Sate operating area of Power MOS FET. TEA103¢ ‘Application circuit using Power MOS FET. TEA-1035, Quality control of NEC semiconductors devices. TEL1202 Quality control guide of semiconductors devices. MEL-1202 ‘Assombly manual of semiconductors devices TEL-1207 2SK1794NEC 2SK1794 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written ‘consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by oF arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. ‘The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications oF they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact, ‘our sales people in advance. Application examples recommended by NEC Corporation. ‘Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, ete. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.