Fabrication process Steps

Name of the Start Date

User:
No. of
Samples:
Sample
Names:
S. Process Purpose Specifications Facility/System Remarks
No. Step Used

Parameters Suggested
1 Wafer Silicon Type p
Specificati wafer Orientation 100
ons
Resistivity 4-7 Ω-cm
Polish One side
Size 2"
2 RCA Cleaning RCA 1 1:02:07
Cleaning of wafer Solution 180 ml DI water +25 Chemical bench
ml NH4OH
Heating 75 °C for 5 min
Remove from hot 50 ml H2O2 (30%)
plate and add

Wait for bubbles 1-2 min

Insert wafers
Heat 6-8 min at 75 °C

cool 8 to 10 min
DI Water rinsing 3 times
HF Dip
30 sec HF dip 2% (192 ml DI water +
8 ml 49% HF)

DI Water rinsing 3 times

RCA 2 1:02:07
Solution 180 ml DI water +25
ml HCl
Heating 75°C for 5 min
Remove from hot 50 ml H2O2 (30%)
plate and add
Wait for bubbles
Insert wafers
Heat 3-6 min at 75 °C
cool 8 to 10 min
DI Water rinsing 3 times
HF Dip
 30 sec HF dip 2% (192 ml DI water +
8 ml 49% HF)

DI Water rinsing 3 times

Dry the Wafers Luminar bench
dryer
3 Oxidation Isolation Thickness 3000 Å
of Silicon oxide Method Wet
wafer
Temperature 1000°C
Time
Gases used N2,O2,H2
Gas flow rate N2-0.5ppm, O2-
250ml/min/div, H2-
600ml/min/div

Pressure Atmospheric pressure

(760 Torr)

4 Microcryst Thickness 50 nm
alline Method PECVD
silicon
Substrate 200°C
Temperature
Time
Gases used SiH4/SiH4 + H2
Gas flow rate 50 sccm
Pressure 0.5 Torr
6 Ultrafine Thickness 50 nm
Poly c-Si Method PECVD
Substrate 200°C
Temperature
Time
Gases used SiH4/SiH4 + H2
Gas flow rate
Pressure 0.5 Torr
7 a-Si:H Thickness 50 nm
Method PECVD
Substrate 200°C
Temperature
Time
Gases used SiH4/SiH4 + H2
Gas flow rate
Pressure 0.5 Torr