KSC5801

KSC5801

High Voltage Color Display Horizontal

Deflection Output
(Damper Diode Built In)
• High Breakdown Voltage : BVCBO=1500V
• High Speed Switching : tF=0.1µs (Typ.)
• Wide S.O.A 1 TO-3PF
• For C-Monitor (48kHz) & C-TV (~21”) 1.Base 2.Collector 3.Emitter

Equivalent Circuit

NPN Triple Diffused Planar Silicon Transistor 50Ω typ.

E
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1500 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
PC Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICES Collector Cut-off Current VCE = 1400V, VBE = 0 1 mA
ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA
IEBO Emitter Cut-off Current VEB = 4V, IC = 0 40 250 mA
hFE1 DC Current Gain VCE = 5V, IC = 1.0A 10 30
!hFE2 VCE = 5V, IC = 5.0A 4 7
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1.2A 5 V
VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 1.2A 1.5 V
VF Damper Diode Turn On Voltage IF = 6A 2 V
tF Fall Time VCC = 200V, IC = 4A 0.2 µs
IB1 = 0.8A, IB2 = -1.6A
RL = 50Ω

Thermal Characteristics TC=25°C unless otherwise noted

Symbol Item Max Unit
RθjC Thermal Resistance, Junction to Case 2.5 °C/W

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC5801
Typical Characteristics

10 100

VCE = 5V
IC[A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

IB = 2.0A 1.8A O
125 C
1.6A
6 1.4A
O
1.2A 75 C
1.0A 10 O
-25 C
0.8A O
0.6A 25 C
4
0.4A O
-25 C

O
2 IB = 0.2A 125 C

1
0 0.1 1 10
0 2 4 6 8 10

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10 2
IC = 5IB IC = 3IB
VBE(sat)[V], BASE-EMITTER VOLTAGE

VBE(sat)[mV], SATURATION VOLTAGE

1
1 O
Tj = -25 C
O
-25 C
O
Tj = 125 C
O
25 C
O O
Tj = +25 C 75 C
O
125 C

0.1 0.4
1E-3 0.01 0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Sautration Voltage

2 10
IC = 5IB VCE = 5V
VBE(sat)[mV], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

6
1

O
-25 C
4
O
25 C

O
75 C
2
O
125 C

0.4 0
0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter Sautration Voltage Figure 6. Base-Emitter On Voltage

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC5801
Typical Characteristics (Continued)

8 1.0

0.8
tSTG[µs], STORAGE TIME

tF[µs], FALL TIME

0.6
IC = 2.0A IC = 3.0A
4 IC = 2.0A
IC = 2.5A IC = 2.5A
0.4

2
IC = 3.0A
0.2

0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

dIB/dt[A/µS], BASE CURRETN GRADIENT dIB/dt[A/µS], BASE CURRETN GRADIENT

Figure 7. Switching Characteristic Figure 8. Switching Characteristic

5 0.8

4
IC = 2.5A
tSTG[µs], STORAGE TIME

0.6
IC = 3.0A
IC = 3.0A
tF[µs], FALL TIME

3
IC = 2.5A
0.4

IC = 2.0A
2 IC = 2.0A

0.2
1

0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

dIB/dt[A/µS], BASE CURRETN GRADIENT dIB/dt[A/µS], BASE CURRETN GRADIENT

Figure 9. Switching Characteristic Figure 10. Switching Characteristic

100 100

IB2 = - 1A, Const

IC max(Pulse)
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT

10
0µ

10
30

s
10

0µ

IC max(DC)
m

10
s
s

1m
s

DC
1

0.1
IC = 5IB1 = - 5IB2
SINGLE PULSE L = 500µH
O SINGLE PULSE
TC=25 C
0.01 0.1
1 10 100 1000 2000 10 100 1000 10000

VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 11. Safe Operating Area Figure 12. Reverse Bias Safe Operating Area

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC5801
Typical Characteristics (Continued)

80

70
PC[W], POWER DISSIPATION

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 13. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC5801
Package Demensions

TO-3PF

5.50 ±0.20
3.00 ±0.20
4.50 ±0.20

15.50 ±0.20 ø3.60 ±0.20

(1.50)

10.00 ±0.20

°
10

23.00 ±0.20
26.50 ±0.20

22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20

16.50 ±0.20

1.50 ±0.20
2.00 ±0.20

2.50 ±0.20

2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20

4.00 ±0.20

+0.20
3.30 ±0.20
0.75 –0.10

5.45TYP 5.45TYP +0.20

[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20

2.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSC5801
Package Demensions

TO-3PF

5.50 ±0.20
3.00 ±0.20
4.50 ±0.20

15.50 ±0.20 ø3.60 ±0.20

(1.50)

10.00 ±0.20

°
10

23.00 ±0.20
26.50 ±0.20

22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20

16.50 ±0.20

1.50 ±0.20
2.00 ±0.20

2.50 ±0.20

2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20

4.00 ±0.20

+0.20
3.30 ±0.20
0.75 –0.10

5.45TYP 5.45TYP +0.20

[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20

2.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001