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Schottky (net i density) J = current/Area = JST[exp(VD/VT) -1]

MOS xdT = (4εs * ΦFP / (e*NA))1/2 (ptype) (4εs * ΦFN / (e*ND))1/2 (ntype)
VFB = (Φm - Φs) – Qoxide/Cox Qox in coulombs not electrons
Vox = Qox/Cox = depletion area charge VG - VFB = Vox + Ψs (band bend @ surface)
QSD max = e*NA*xdT Vthreshold = QSD max/Cox + VFB + 2ΦFP
ΦFP = -Vtln(NA/ni) Cox = εox / tox (εox = 3.9*8.85…) per area
Cap of depletion -> use correct ε and xdT (Cox for inversion)
For VG > VTN charge Qi = Cox(VG-VT) builds in oxide
Pinch off: VGS – VDS(sat) = Vt Peak ID at VDS(sat)
Non saturation ID = (W/L)μnCox[(VGS-VTN)VDS – (VDS)2/2]
Linear ID = (W/L)μnCox(VGS-VTN)VDS
Saturation ID = = W/(2L)μnCox(VGS-VTN)2
Power = CVdd2f f = frequency
Amplifier load line: VDS = Vdd - IDRD
Transconductance: non-saturation gmL = (W/L)μnCox VDS
saturation gms = (W/L)μnCox(VGS-VTN)
cutoff freq fT = μn(VGS-VTN)/(2πL2)
For MOS at threshold, e- conc at surface = NA in bulk
fF(E) ~ exp((EF – E)/KT) n0 = NCexp((EF – EC)/KT) p0 = NVexp((EV – EF)/KT)
ni2 = NVNCexp(-Eg/KT) n0+NA = p0+ND
EF is 3KT from bands n0 = niexp((EF – EFi)/KT) p0 = niexp((EFi – EF)/KT)
n0 = .5[ND-NA + sqrt([ND-NA]2 + 4ni2)]
Drift current J = (enμn + epμp)ε Dn = KT/e * μn
pn junction Vbi = ΦFN - ΦFp = KT/e * ln(NAND/ ni2) Fermi lvl diff before joining
Wdepletion = sqrt[2εs(Vbi – VR)/e * (NA + ND)/(NAND)] Current J = JS[exp(VD/VT) -1]
K = 1.38E-23 J/K = 8.62E-5 eV/K e = 1.602E-19 J ε0 = 8.85E-14 F/cm
300K Nc Nv ni εR μn μp Eg χ
Si 2.8E19 1.04E19 1.5E10 11.7 135 480 1.12 4.01eV
0
X is energy from conduction band to free electron level (plus Vox)
Φm is energy from EF in metal to free electron level
Φs is energy from EF in SC to free electron level
MOS Substrate bias QSD max = sqrt[2eεNA(2ΦFP + VSB)]
pn junction / BJT injected minority carriers: pn(0) = pn0exp(eVa/KT)
LP = sqrt(DpTp) pn(x) = pn0 + (pn(0) - pn0)exp(-x/LP)
ideal pn junction Jp(xn) = (eDppn0/LP)[exp(eV/KT) - 1]
Jn(-xp) = (eDnnp0/Ln)[exp(eV/KT) -1]
J = Jp + Jn = Js(exp(eV/KT) - 1)
γ - ratio of majority carrier current to total current in emitter (emitter efficiency)
αT - base transport factor, ratio of collector majority to emitter majority
α = γαT common base current gain β = α/(1- α) = α(IE/IB)
If W << LP then (for PNP, base hole conc) pn(x) = pn(0)(1-x/W)
PNP active current densities IEp = ICp = (eDppn0/W)exp(eV/KT)
IEn = (eDEnE0/WE)(exp(eV/KT)-1) ICn = eDCnC0/LC
IB = (eDnnE0/WE)exp(eV/KT) tB = W2/(2DnB) VA = QpB/CdBC
fT = 1/(2πtB)