Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
− Ea
RT
= 2.86 10
13
3 10 (298)
15
1
2
e
−2.48 103 1.987 298
= 224.7 nm/min.
7. SiO2 Etch Rate (nm/min) = 0.614 10 Etch selectivity of SiO2 over Si =
13
3 10 (298)
15
1
2
e
here D(T0) is the diffusion coefficient at T0. Substituting the above equation
into the exression for the effective Dt roduct gives
( Dt ) eff ≈ ∫ D (T0 ) ex
0
∞
− rE a t kT0
2
dt = D (T0 )
kT0 rE a
2
Thus the ram do
n rocess results in an effective additional time equal to kT02
/rEa at the initial diffusion temerature T0. For hoshorus diffusion in silico
n at 1000°C,
e have from Fig. 6.4:
D(T0) = D (1273 K) = 2× 10 14 cm2/s r=
1273 − 773 20 × 60
= 0.417 K / s
Ea = 3.66 eV
Therefore, the effective diffusion time for the ram do
n rocess is
kT
2 0 a
rE
=
1.38 × 10
−23
(1273)
2 −19
0.417( 3.66 × 1.6 × 10
)
= 91s ≈ 1.5 min .
5. For lo
concentration drive in diffusion, the diffusion is given by Gaussian
distribution. The surface concentration is then
C (0, t ) = S S E = ex a πDt πD0 t 2kT
22
dC S E − t 3 / 2 = ex a dt πD 0 2kT 2
C = −0.5 × t
or
dC C
= −0.5 ×
dt t
here Cs = 4× 1018 cm 3, t = 3 hr = 10800 s, and D = 5x10 14 cm2/s. The diffusion
length is then
Dt = 2.32 × 10 −5 cm = 0.232µm x The distribution of arsenic is C ( x) = 4 × 1018 erfc
.64 × 10
The junction deth can be obtained as follo
s
xj 1015 = 4 × 1018 erfc 4.64 × 10 −5
xj = 1.2× 10 4 cm = 1.2 µm.
23
7. At 900°C, ni = 2× 1018 cm 3. For a surface concentration of 4×1018 cm 3, given by t
he “extrinsic” diffusion rocess
D = D0 e
− Ea kT
4 × 1018 n − 23 × = 45.8e 1.38×10 ×1173 × = 3.77 × 10 −16 cm 2 /s ni 2 × 1018
−4.05×1.6×10 −19
x j = 1.6 Dt = 1.6 3.77 × 10 −16 × 10800 = 3.23 × 10 −6 cm = 32.3 nm .
8. Intrinsic diffusion is for doant concentration lo
er than the intrinsic carr
ier concentration ni at the diffusion temerature. Extrinsic diffusion is for do
ant concentration higher than ni.
10.
u T= = 10 −5 u 2 π 1
∴u = 3.02
d = R + 4.27 σ p = 0.53 + 4.27 × 0.093 = 0.927 µm
2
29
11. The SUPREM input file for thi problem i :
TITLE Problem 7 11 COMMENT Initialize ilicon ub trate INITIALIZE <100> Silicon
Pho phor Concentration=1e14 COMMENT Implant Boron IMPLANT Boron Energy=30 Do e=
1e13 PRINT Layer Active Concentration Pho phoru Boron Net PLOT Active Net Cmin
=1e11 STOP End Problem 7 11
The re ulting doping profile i hown in the figure below.
Examining thi figure and the SUPREM output file give : (a) The peak of the impl
anted boron occur at a depth of 0.11 µm. (b) The boron concentration at the peak
i 8.59e17 cm 3. (c) The junction depth i 0.4492 µm.
30
12. The SUPREM input parameter that mu t be determined are the do e and implant
energy. The do e can be determined from Eq. 11 in Chapter 6 a
Q(t ) ≅ 1.13C Dt
where C can be read directly from the SUPREM output file for Example 3 in Chapt
er 6 a 4.6e19 cm 3, D ≈ 2.3e − 16 cm2/ for boron at 850 oC ( ee Figure 6.4), and t
= 900 . Sub tituting the e number into the above expre ion give a do e of 2
.36e13 cm 2. The implant energy required can be approximated by matching the dif
fu ed and implanted concentration profile at the urface (x = 0) and at the jun
ction and u ing Eq. 1 to olve for Rp and σp imultaneou ly. Note from the SUPREM
output file corre ponding to Example 3 in Chapter 6 that the junction occur at
xj = 0.0555 µm, at which point the doping concentration i 1016 cm 3. A tated be
fore, the urface concentration i 4.6e19 cm 3. The e equation cannot be olved
analytically, but after everal iteration , the approximate value of Rp and σp r
equired are found to be 0.011 µm and 0.008 µm, re pectively. The e value corre pond
to an implant energy of 5 keV (extrapolating from Figure 7.6a). The require SUP
REM input file i therefore:
TITLE COMMENT INITIALIZE COMMENT IMPLANT PRINT PLOT STOP Problem 7 12 Initialize
ilicon ub trate <100> Silicon Pho phor Concentration=1e16 Implant Boron Boron
Energy=5 Do e=2.36e13 Layer Active Concentration Pho phoru Boron Net Active N
et Cmin=1e11 End Problem 7 12
The re ulting doping profile appear in the figure below.
31
32
CHAPTER 8
1.
ν av =
∫ ∫
∞
0 ∞ 0
vf v dv f v dv
=
8kT πM
3/ 2
4 M Where fν = π 2kT
ν 2 ex −
Mν 2 2kT
M: Molecular mass k: Boltzma costat = 1.38×10 23 J/k T: The absolute temeratu
re ν: Seed of molecular So that
ν av =
2. λ = 0.66 cm P( in Pa ) 0.66
2
π
2 × 1.38 × 10 −23 × 300 = 468 m/sec = 4.68 × 10 4 cm/sec . 29 × 1.67 × 10 − 27
∴P = 3.
λ
=
0.66 = 4.4 × 10 −3 Pa . 150
For close ackig arrage, there are 3 ie shaed sectios i the equilateral tr
iagle. Each sectio corresods to 1/6 of a atom. Therefore
1 3× umber of atoms cotaied i the triagle 6 = Ns = area of the triagle 1 3 d×
d 2 2 =
2 3d 2
=
2 3 (4.68 × 10 −8 ) 2
= 5.27 × 1014 atoms/cm 2 .
33
d d
4.
(a) The ressure at 970°C (=1243K) is 2.9×10 1 Pa for Ga ad 13 Pa for As2. The arri
val rate is give by the roduct of the imrigemet rate ad A/πL2 : P A Arrival r
ate = 2.64×1020 2 MT πL
2.9 × 10 −1 5 = 2.64×1020 2 69.72 × 1243 π × 12
= 2.9×1015 Ga molecules/cm2 –s The growth rate is determied by the Ga arrival rate
ad is give by (2.9×1015)×2.8/(6×1014) = 13.5 Å/s = 810 Å/mi . (b) The ressure at 700ºC
or ti is 2.66×10 6 Pa. The molecular weight is 118.69. Therefore the arrival rate
is
2.66 × 10 −6 5 10 2 2.64 × 10 20 118.69 × 973 π × 12 2 = 2.28 × 10 molecula
If Sn atoms are fully incorporated and active in the Ga sublattice of GaAs, we h
ave an electron concentration of
2.28 1010 2.9 1015 4.42 10 22 2 = 1.74 1017 cm 3 .
5. The x value is about 0.25, which is obtained from Fig. 8.7.
34
6. The lattice constants for InAs, GaAs, Si and Ge are 6.05, 5.65,5.43, and 5.65
Å, respectively. Therefore, the f value for InAs GaAs system is
f = (5.65 − 6.05) 6.05 = −0.066
And for Ge Si system is
f = (5.43 − 5.65) 5.65 = −0.39 .
7. (a) For SiNxHy
Si 1 = = 1.2 N x
∴ x = 0.83
atomic % H =
100 y = 20 1 + 0.83 + y
∴ y = 0.46
The empirical formula is SiN0.83H0.46.
(b) ρ= 5× 1028e-33.3×1.2 = 2× 1011 Ω-cm As the Si/N atio inc eases, the esistivity dec e
ases exponentially.
8.
Set Ta2O5 thickness = 3t, ε1 = 25 SiO2 thicknss = t, ε2 = 3.9 Si3N4 thicknss = t, ε3
= 7.6, ara = A thn C Ta 2O5 = 1 C ONO C ONO C Ta 2 O5 C ONO =
ε 1ε 0 A
3t t + t + t
ε 2ε 0 A ε 3ε 0 A ε 2ε 0 A εεε A = 2 3 0 (ε 2 + 2ε 3 )t
=
ε 1 (ε 2 + 2ε 3 ) 25(3.9 + 2 × 7.6) = = 5.37 . 3ε 2 ε 3 3 × 3.9 × 7.6
35
9.
St BST thicknss = 3t, ε1 = 500, ara = A1 SiO2 thicknss = t, ε2 = 3.9, ara = A2
Si3N4 thicknss = t, ε3 = 7.6, ara = A2 thn
ε 1ε 0 A1
3t
=
ε 2 ε 3ε 0 A2 (ε 2 + 2ε 3 )t
A1 = 0.0093. A2
10. Lt Ta2O5 thicknss = 3t, ε1 = 25 SiO2 thicknss = t, ε2 = 3.9 Si3N4 thicknss =
t, ε3 = 7.6 ara = A thn
ε 1ε 0 A
3t d=
=
ε 2ε 0 A
d = 0.468t.
3ε 2 t
ε1
36
11. Th dposition rat can b xprssd as r = r0 xp ( Ea/kT) whr Ea = 0.6
V for silan oxygn raction. Thrfor for T1 = 698 K
1 r (T2 ) 1 = 2 = xp 0.6 kT − kT r (T1 ) 2 1 ln 2 = 0.6 300 3
4 T2 =1030 K= 757 ℃. 12. We can useenergy-enhanced
CVD me hods such
as using a fo
cused energy source or UVlamp. Ano her me hod is o use boron doped -glass
whi
ch will reflow a empera ures less han 900 . 13. Modera ely low
empera ures a
re usually
used
for
polysilicon
deposi ion, and
silane decomposi
ion occurs a l
ower empera ures han ha for chloride reac ions. In addi ion, silane is used
for be ercoverage over amorphous
ma erials
such SiO2. 14. There are wo reason
s. One is o minimize he hermal budge of he wafer, reducing dopan diffusion
and
ma erial
degrada
ion. In addi
ion, fewer
gas phase reac ions occur
a lower
empera
ures, resul ing in smoo her and be er adhering films. Ano her reason i
s ha he polysilicon
will
have small grains. The finer grains
are
easier o ma
sk and e ch o givesmoo hand uniform
edges. However, for empera uresless ha
n 575 C he deposi ion ra e is oo low. 15. The fla -band vol age shif is
Qo C0
∆VFB = 0.5 V ~
C0 =
ε ox
d
=
3.9 × 8.85 × 10 −14 = 6.9 × 10 −8 F/cm − 2 . 500 × 10 −8
∴ Numbr of fixd oxid charg is
37
0.5C 0 0.5 × 6.9 × 10 −8 = = 2.1 × 1011 cm 2 −19 q 1.6 × 10
To rmov ths chargs, a 450℃ hea rea men in hydrogen
forabou 30 minu es is
required. 16. 20/0.25 = 80 sqs. Therefore, he resis ance of he me al line is
5×50 = 400 Ω .
17.
Fo TiSi2 30 × 2.37 = 71.1nm Fo CoSi2 30 × 3.56 = 106.8nm.
18.
Fo TiSi2: Advantage: low esistivity It can educe native-oxide laye s TiSi2 on
the gate elect ode is mo e esistant to high-field-induced hot-elect on deg ada
tion. Disadvantage: b idging effect occu s. La ge Si consumption du ing fo mati
on of TiSi2 Less the mal stability Fo CoSi2: Advantage: low esistivity High te
mpe atu e stability No b idging effect A selective chemical etch exits Low shea
fo ces Disadvantage: not a good candidate fo polycides
38
19. (a) R = ρ
εA
d
L 1 = 2.67 × 10 − 6 × = 3.2 × 10 3 Ω −4 −4 A 0.28 × 10 × 0.3 × 10
=
C=
εTL
S
=
3.9 × 8.85 × 10 −14 × 0.3 × 10 −4 × 1 × 10 4 × 10 −6 = 2.9 × 10 −13 F 0.36 × 10 − 4
RC = 3.2 × 10 5 × 2.9 × 10 −15 = 0.93 ns L 1 = 1.7 × 10 − 6 × = 2 × 10 3 Ω −4 −4 A 0.28 × 1
(b) R = ρ C=
2.8 × 8.85 × 10 −14 × 0.3 × 10 −4 × 1 = 2.1 × 10 −13 F −4 d S 0.36 × 10 3 −13 RC = 2 × 10 ×
= = 0.42 = 0.45. 093
εA
εTL
(c) W can dcras th RC dlay by 55%. Ratio =
20. (a)
R=ρ
1 L = 2.67 × 10 − 6 × = 3.2 × 10 3 Ω 4 4 A 0.28 × 10 × 0.3 × 10
3.9 × 8.85 × 10 −14 × 0.3 × 10 −4 × 1 × 3 = 8.7 × 10 −13 F C= = = 4 d S 0.36 × 10 RC = 3.2
= 2.8 s.
εA
εTL
.
(b) R = ρ 1 L = 1.7 × 10 − 6 × = 2 × 10 3 Ω 4 4 A 0.28 × 10 × 0.3 × 10
C=
εA
d
=
εTL
S
=
2.8 × 8.85 × 10 −14 × 0.3 × 10 −4 × 1 × 3 = 6.3 × 10 −13 F 4 0.36 × 10
RC = 2 × 10 3 × 8.7 × 10 −13 = 2.5 ns RC = 3.2 × 10 3 × 8.7 × 10 −13 = 2.5 ns. 21. (a) Th
num runnr can b considrd as two sgmnts connctd in sris: 20% (or 0.4 mm
) of th lngth is half thicknss (0.5 µm) and th rmaining 1.6 mm is full thickn
ss (1µm). Th total rsistanc is
0.16 0.04 + −4 R = ρ 1 + 2 = 3 × 10 − 6 − 4 −4 −4 10 × (0.5 × 10 ) 10 ×
39
= 72 Ω. The limiting cu ent I is given by the maximum allowed cu ent density tim
es c oss-sectional a ea of the thinne conducto sections: I = 5×105 A/cm2× (10-4×0.5×10
-4) = 2.5×10-3 A = 2.5 mA. The voltage d op ac oss the whole conducto is then V =
RI = 72Ω × 2.5 × 10 −3 A = 0.18V.
22.
0.5 µm 40 m 0.5 µm
Cu
=
Al
60 m
h: height , W : width , t : thickess, assume that the resistivities of the clad
dig layer ad TiN are much larger tha ρ A and ρ Cu R Al = ρ Al × RCu = ρ Cu × h ×W h ×W =
= 1.7 (0.5 − 0.1) × 0.5 (0.5 − 2t ) × (0.5 − 2t )
Whe R Al = RCu The ⇉ 2.7 1.7 = 0.4 × 0.5 (0.5 − 2t ) 2 t = 0.073 µm = 73 m .
40
CHAPTER 9
1.
Each U shae sectio (refer to the figure) has a area of 2500 µm × 8 µm = 2 × 104 µm2. Th
erefore, there are (2500)2/2 ×104 = 312.5 U shaed sectio. Each sectio cotais
2 log lies with 1248 squares each, 4 corer squares, 1 bottom square, ad 2 ha
lf squares at the to. Therefore the resistace for each sectio is 1 kΩ /□ (1248×2 +
4×0.65 +2) = 2500.6 kΩ The maximum esistance is then 312.5×2500.6 = 7.81 × 108 Ω = 781 MΩ
2. The a ea equi ed on the chip is
41
A=
Cd
ε ox
=
(30 × 10 −7 )(5 × 10 −12 ) = 4.35 × 10 −5 cm 2 −14 3.9 × 8.85 × 10
= 4.35 × 103 µm2 = 66 × 66 µm Rfr to Fig.9.4a and using ngativ photorsist of all l
vls (a) Ion implantation mask (for p+ implantation and gat oxid) (b) Contact
windows (2×10 µm) (c) Mtallization mask (using Al to form ohmic contact in th cont
act window and form th MOS capacitor). Bcaus of th rgistration rrors, an a
dditional 2 µm is incorporatd in all critical dimnsions.
42
3. If th spac btwn lins is 2 µm, thn thr is 4 µm for ach turn (i.., 2×n, fo
r on turn). Assum thr ar n turns, from Eq.6, L ≈ µ0n2r ≈ 1.2 × 10 6n2r, whr r can
b rplacd by 2 × n. Thn, w can obtain that n is 13.
43
4. (a) Mtal 1, (b) contact hol, (c) Mtal 2. (a) Mtal 1,
(b) contact hol,
(c) Mtal 2.
44
5. Th circuit diagram and dvic cross sction of a clampd transistor ar show
n in (a) and (b), rspctivly.
6.
(a) Th undopd polysilicon is usd for isolation. (b) Th polysilicon 1 is usd
as a solid phas diffusion sourc to form th xtrinsic bas rgion and th bas
lctrod. (c) Th polysilicon 2 is usd as a solid phas diffusion sourc to
form th mittr rgion and th mittr lctrod.
7. (a) For 30 kV boron, Rp = 100 nm and ∆Rp = 34 nm. Assuming that Rp and ∆Rp for
45
boron ar th sam in Si and SiO2 th pak concntration is givn by S 2π ∆R p = 8 × 1
011 2π (34 × 10 )
−7
= 9.4 × 1016 cm −3
The amout of boro ios i the silico is
(x − R )2 ∞ Q S ex − =∫ 2 d q 2 ∆R p 2π ∆R p = Rp − d S 2 − rfc 2 ∆R 2
=
750 2 − rfc 2 × 340
= 7.88 × 1011 cm − 2
Assum that th implantd boron ions form a ngativ sht charg nar th Si Si
O2 intrfac, thn Q 1.6 × 10 −19 × (7.88 × 1011 ) = 0.91 V ∆VT = q / C ox = q 3.9
(25 × 10 − 7 ) (b) For 80 kV arsnic implantation, Rp = 49 nm and ∆ Rp = 18 nm. Th
pak arsnic concntration is S 2π ∆R p = 1016 = 2.21 × 10 21 cm − 3 .
π × (18 × 10 )
−7
46
8.
(a) Because (100) orieted silico has lower (~ oe teth) iterface traed cha
rge ad a lower fixed oxide charge. (b) If the field oxide is too thi, it may
ot rovide a large eough threshold voltage for adequate isolatio betwee eigh
borig MOSFETs. (c) The tyical sheet resistace of heavily doed olysilico ga
te is 20 to 30 Ω /□, which is adequate fo MOSFETs with gate lengths la ge than 3 µm.
Fo sho te gates, the sheet esistance of polysilicon is too high and will cau
se la ge RC
47
delays. We can use ef acto y metals (e.g., Mo) o silicides as the gate mate ia
l to educe the sheet esistance to about 1 Ω /□. (d) A self-aligned gate can be obt
ained by fi st defining the MOS gate st uctu e, then using the gate elect ode as
a mask fo the sou ce/d ain implantation. The self-aligned gate can minimize pa
asitic capacitance caused by the sou ce/d ain egions extending unde neath the
gate elect ode (due to diffusion o misalignment). (e) P-glass can be used fo i
nsulation between conducting laye s, fo diffusion and ion implantation masks, a
nd fo passivation to p otect devices f om impu ities, moistu e, and sc atches.
9. The lowe insulato has a dielect ic constant ε1/ε0 = 4 and a thicknss d1= 10 nm
Th uppr insulator has a dilctric constant ε2/ε0 = 10 and a thicknss d2 = 100 n
m. Upon application of a positiv voltag VG to th xtrnal gat, lctric fil
d E1 and E2 ar stablishd in th d1 and d2 rspctivly. W hav, from Gauss’ la
w, that ε1E1 = ε2E2 +Q and VG = E1d1 + E2d2 whr Q is th stord charg on th floa
ting gat. From ths abov two quations, w obtain
E= 1
VG Q + d1 + d 2 (ε 1 / ε 2 ) ε 1 + ε 2 (d1 / d 2 )
48
10 × 10 7 −7 + J = σE = 10 1 10 + 100 4 10
Q 5 = 0.2 − 2.26 × 10 Q 10 −14 4 + 10 100 × 8.85 × 10
(a) If the tored charge doe not reduce E1 by a ignificant amount (i.e., 0.2 >
> 2.26×105 Q , we can write
Q = ∫ σE dt ' ≈ 0.2∆t = 0.2 × (0.25 × 10 − 6 ) = 5 × 10 −8 C 1
t
0
∆VT =
5 × 10 −8 Q = = 0.565 V C2 10 × 8.85 × 10 −14 / 100 × 10 −7
(
)(
)
(b) whn t → ∞, J → 0 w hav Q → 0.2 / 2.26 × 10 5 ≅ 8.84×10 7 C. Thn ∆VT = 10. 8.84 × 10
9.98 V. C2 10 × 8.85 × 10 −14 / 10 −5
(
)
49
50
11. Th oxid capacitanc pr unit ara is givn by
C ox =
ε SiO
d
2
= 3.5 × 10 − 7 F/cm2
and th maximum currnt supplid by th dvic is I DS ≈ 1W 1 5µm 2 µC ox (VG − VT )2 =
3.5 × 10 −7 (VG − VT ) ≈ 5 mA 2 L 2 0.5µm
51
and th maximum allowabl wir rsistanc is 0.1 V/5 mA, or 20Ω. Then, the length
of the wi e must be
L≤ R × A ea
ρ
=
20Ω × 10 −8 cm 2 = 0.074 cm 2.7 × 10 −8 Ω − cm
or 740 µm. This is a log distace comared to most device sacig. Whe drivig s
igals betwee widely saced logic blocks however, miimum feature sized lies w
ould ot be aroriate.
12.
52
13. To solve the short chael effect of devices. 14. The device erformace wil
l be degraded from the boro eetratio. There are
53
methods to reduce this effect: (1) usig raid thermal aealig to reduce the t
ime at high temeratures, cosequetly reduces the diffusio of boro, (2) usig
itrided oxide to suress the boro eetratio, sice boro ca easily combi
e with itroge ad becomes less mobile, (3) makig a multi layer of olysilico
to tra the boro atoms at the iterface of each layer. 15. Total caacitace o
f the stacked gate structure is :
C=
ε1
d1
×
ε2
d2
ε1 ε 2 7 25 7 25 = + × + = 2.12 d 0.5 10 0.5 10 1 d2
3.9 = 2.12 d ∴d = 3.9 =1.84 nm. 2.12
16. Disadvantags of LOCOS: (1) high tmpratur and long oxidation tim caus V
T shift, (2) bird’s bak, (3) not a planar surfac, (4) xhibits oxid thinning f
fct. Advantags of shallow trnch isolation: (1) planar surfac, (2) no high t
mpratur procssing and long oxidation tim, (3) no oxid thinning ffct, (4)
no bird’s bak. 17. For isolation btwn th mtal and th substrat. 18. GaAs la
cks of high quality insulating film.
19. Answrs will vary. If w ignor th contributions of isolation rgion procs
sing, th structur can b simulatd using four SUPREM input dcks. Th first d
ck simulats
54
procssing in th activ rgion of th dvic, up to th point of th isolation
oxidation. Th scond dck starts with th rsults from th first dck and compl
ts all procssing in th activ rgions. This allows th doping profil throug
h th mittr to b plottd (for part b). Th third dck is similar to th scon
d, xcpt it liminats th mittr implant and facilitats plotting of th dopi
ng profil through th bas rgion (for part a). Th final dck is also similar
to th scond, xcpt that it liminats th bas implant and facilitats plotti
ng th doping profil through th collctor rgion (for part c). Th complt pr
ocss squnc is as follows: 1) Bgin with a high rsistivity, <100>, p typ si
licon substrat. 2) Grow a 1 µm SiO2 layr. 3) Rmov th oxid in th aras whr
th burid layrs ar to b placd. 4) Implant antimony at a dos of 115 cm 2.
Driv in th burid layr for 5 hours at 1150 oC. 5) Etch th silicon dioxid f
rom th surfac. 6) Grow a 1.6 µm arsnic dopd pitaxial layr. 7) Grow a 400 Å pad
oxid. 8) Dposit 800 Å of silicon nitrid. 9) Etch th oxid and nitrid from th
isolation rgions. 10) Etch th silicon halfway through th pi layr.
55
11) Implant boron in th fild rgions with a dos of 113 cm 2 at an nrgy of
50 kV. 12) Oxidiz th fild rgions to a thicknss approximatly on half that
of th pi layr. 13) Implant th bas rgion with boron at a dos of 114 cm 2
at an nrgy of 50 kV. 14) Etch th oxid from th mittr rgion. 15) Implant
mittr collctor contact rgions with arsnic at a dos of 515 cm 2 at an n
rgy of 100 kV. 16) Driv in th arsnic and activat th bas diffusion. Th SU
PREM input dcks ar as follows:
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION COMMENT ETCH COMMENT IMPLANT
DIFFUSION DIFFUSION COMMENT ETCH COMMENT EPITAXY BJT – Deck 1 Iitial Active Regio
Processig Iitialize silico substrate <100> Silico Boro Cocetratio=5e14
Grow maskig oxide for o active regios Time=100 Temerature=1150 WetO2 Etch
oxide over buried layer regios Oxide Imlat ad drive i atimoy buried layer
Atimoy Dose=5e14 Eergy=120 Time=15 Temerature=1150 DryO2 Time=300 Temeratu
re=1150 Etch the oxide Oxide Grow 1.6 µm of arseic doed ei Temerature=1050 Tim
e=4 Growth.Rate=0.4 Arseic Gas.Coc=5e15
56
COMMENT DIFFUSION COMMENT DEPOSITION SAVEFILE STOP
Grow 400 A ad oxide Time=20 Temerature=1060 DryO2 Deosit itride to mask the
field oxidatio Nitride Thickess=0.08 Structur Fileame=bjtactiveiit.str Ed B
JT 1
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION DIFFUSION DIFFUSION DIFFUSION
DIFFUSION COMMENT ETCH ETCH ETCH COMMENT IMPLANT COMMENT ETCH COMMENT IMPLANT C
OMMENT DIFFUSION PRINT PLOT STOP
BJT – Deck 2 Fial Active Regio Processig for Emitter Profile Start with reviou
s results Structur=bjtactiveiit.str Field oxide growth Time=30 Temerature=800
t.rate=10 Time=15 Temerature=1000 DryO2 Time=210 Temerature=1100 Wet02 Time=15
Temerature=1100 Etch the oxide ad itride layers Oxide Nitride Oxide Imlat
boro base Boro Dose=1e14 Eergy=50 Remove oxide from emitter regio Oxide Iml
at arseic emitter ad collector cotacts Arseic Dose=5e15 Eergy=100 Drive i
emitter ad collector cotact regios Time=20 Temerature=1000 Layers Chemical
Boro Arseic Phoshor Net Ed BJT 2 DryO2 Time=10 Temerature=1100 t.rate= 30
TITLE COMMENT COMMENT
BJT – Deck 3 Active Regio Processig for Base Profile Start with revious results
57
INITIALIZE COMMENT DIFFUSION DIFFUSION DIFFUSION DIFFUSION DIFFUSION COMMENT ETC
H ETCH ETCH COMMENT IMPLANT COMMENT ETCH COMMENT DIFFUSION PRINT PLOT STOP
Structur=bjtactiveiit.str Field oxide growth Time=30 Temerature=800 t.rate=10
Time=15 Temerature=1000 DryO2 Time=210 Temerature=1100 Wet02 Time=15 Temeratu
re=1100 Etch the oxide ad itride layers Oxide Nitride Oxide Imlat boro base
Boro Dose=1e14 Eergy=50 Remove oxide from emitter regio Oxide Drive i emitt
er ad collector cotact regio Time=20 Temerature=1000 Layers Chemical Boro A
rseic Phoshor Net Ed BJT 3 DryO2 Time=10 Temerature=1100 t.rate= 30
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION DIFFUSION DIFFUSION DIFFUSION
DIFFUSION COMMENT ETCH ETCH ETCH COMMENT ETCH
BJT – Deck 4 Active Regio Processig for Collector Profile Start with revious re
sults Structur=bjtactiveiit.str Field oxide growth Time=30 Temerature=800 t.ra
te=10 Time=15 Temerature=1000 DryO2 Time=210 Temerature=1100 Wet02 Time=15 Tem
erature=1100 Etch the oxide ad itride layers Oxide Nitride Oxide Remove oxide
from emitter regio Oxide DryO2 Time=10 Temerature=1100 t.rate= 30
58
COMMENT IMPLANT COMMENT DIFFUSION PRINT PLOT STOP
Imlat arseic emitter ad collector cotacts Arseic Dose=5e15 Eergy=100 Driv
e i emitter ad collector cotact regios Time=20 Temerature=1000 Layers Chemi
cal Boro Arseic Phoshor Net Ed BJT 4
The resultig doig rofiles though the base, emitter, ad collector (arts a,
b, ad c), resectively, are show i the followig three figures:
(a)
59
(b)
60
(c)
20. Aswers will vary. For the sake of simlicity, we will igore isolatio rela
ted rocessig. The structure ca be simulated usig four SUPREM iut decks (o
e for each requested rofile). The comlete rocess sequece is as follows:
61
1) 2) 3) 4) 5) 6) 7) 8) 9)
Start with a <100>, tye silico substrate. Grow a 0.9 µm SiO2 layer. Remove the
oxide i the well areas. Imlat boro well at a dose of 5e14 cm 2 at 50 keV.
Drive i the well for 6 hours at 1150 oC. Remove oxide i PMOS source/drai r
egios. Imlat boro for PMOS source/drai at a dose of 1e14 cm 2 at 20 keV. Dr
ive i the PMOS source/drai regios for 2.5 hours at 1100 oC. Etch oxide i NMO
S source/drai regios.
10) Imlat hoshorus for NMOS source/drai at a dose of 1e14 cm 2 at 20 keV. 1
1) Drive i the NMOS source/drai regios for 2.5 hours at 1100 oC. 12) Etch oxi
de i gate areas. 13) Grow 500 Å gate oxide. 14) Deosit ad atter olysilico g
ates. 15) Grow assivatio oxide. 16) Deosit ad atter metallizatio. The SUP
REM iut decks are ad corresodig oututs as follows:
TITLE COMMENT COMMENT INITIALIZE CMOS – Deck 1 PMOS source/drai Iitialize silico
substrate <100> Silico Phoshorus Cocetratio=5e15 Thickess=5
62
COMMENT DIFFUSION COMMENT ETCH COMMENT DIFFUSION COMMENT ETCH COMMENT IMPLANT CO
MMENT DIFFUSION COMMENT DIFFUSION COMMENT ETCH COMMENT DEPOSITION PRINT PLOT STO
P
Grow field oxide Time=120 Temerature=1100 WetO2 Etch oxide after well imlat
Oxide P well drive i Time=900 Temerature=1150 DryO2 Etch the oxide rior to P
MOS source/drai imlat Oxide PMOS source/drai imlat Boro Dose=1e14 Eergy=
20 PMOS source/drai drive i Time=150 Temerature=1100 DryO2 NMOS source/drai
drive i ad gate oxidatio Time=150 Temerature=1100 DryO2 Etch oxide Oxide De
osit metal Alumium Thickess=1.0 Layers Chemical Boro Phoshor Net Ed CMOS 1
63
(a)
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION COMMENT ETCH COMMENT DIFFUSIO
N CMOS – Deck 2 PMOS Gate Iitialize silico substrate <100> Silico Phoshorus Co
cetratio=5e15 Thickess=5 Grow field oxide Time=120 Temerature=1100 WetO2 Et
ch oxide after well imlat Oxide P well drive i Time=900 Temerature=1150 Dr
yO2
64
COMMENT ETCH COMMENT DIFFUSION COMMENT DIFFUSION COMMENT DEPOSITION COMMENT DIFF
USION PRINT PLOT STOP
Etch the oxide rior to PMOS source/drai imlat Oxide PMOS source/drai drive
i Time=150 Temerature=1100 DryO2 NMOS source/drai drive i ad gate oxidatio
Time=150 Temerature=1100 DryO2 Deosit olysilico Polysilico Thickess=0.5 G
row assivatio oxide Time=30 Temerature=1000 DryO2 Layers Chemical Boro Phos
hor Net Ed CMOS 2
65
(b)
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION COMMENT ETCH COMMENT CMOS – Dec
k 3 NMOS source/drai Iitialize silico substrate <100> Silico Phoshorus Coc
etratio=5e15 Thickess=5 Grow field oxide Time=120 Temerature=1100 WetO2 Etch
oxide i well regio Oxide P well imlat
66
IMPLANT COMMENT DIFFUSION COMMENT DIFFUSION COMMENT ETCH COMMENT IMPLANT COMMENT
DIFFUSION COMMENT ETCH COMMENT DEPOSITION PRINT PLOT STOP
Boro Dose=5e14 Eergy=50 P well drive i Time=900 Temerature=1150 DryO2 PMOS s
ource/drai drive i Time=150 Temerature=1100 DryO2 Etch the oxide rior to NMO
S source/drai imlat Oxide NMOS source/drai imlat Phoshorus Dose=1e14 Eer
gy=20 NMOS source/drai drive i ad gate oxidatio Time=150 Temerature=1100 Dr
yO2 Etch oxide Oxide Deosit metal Alumium Thickess=1.0 Layers Chemical Boro
Phoshor Net Ed CMOS 3
67
(c)
TITLE COMMENT COMMENT INITIALIZE COMMENT DIFFUSION COMMENT ETCH CMOS – Deck 4 NMOS
gate Iitialize silico substrate <100> Silico Phoshorus Cocetratio=5e15 T
hickess=5 Grow field oxide Time=120 Temerature=1100 WetO2 Etch oxide i well
regio Oxide
68
COMMENT IMPLANT COMMENT DIFFUSION COMMENT DIFFUSION COMMENT ETCH COMMENT DIFFUSI
ON COMMENT DEPOSITION COMMENT DIFFUSION PRINT PLOT STOP
P well imlat Boro Dose=5e14 Eergy=50 P well drive i Time=900 Temerature=11
50 DryO2 PMOS source/drai drive i Time=150 Temerature=1100 DryO2 Etch the oxi
de rior to NMOS source/drai imlat Oxide NMOS source/drai drive i ad gate
oxidatio Time=150 Temerature=1100 DryO2 Deosit olysilico Polysilico Thick
ess=0.5 Grow assivatio oxide Time=30 Temerature=1000 DryO2 Layers Chemical Bo
ro Phoshor Net Ed CMOS 4
69
(d)
70
CHAPTER 10
1. x chart: Ceter = µ = 0.75 V UCL = µ + 3σ 3(0.1) = 0.75 + = 0.845 V n 10
LCL = 3
3σ = 0.655 V n
chart: Center = = c4σ = 0.9727(0.1) = 0.0973 V UCL = + 3 σ 1 − c = 0.973 + 3(0.1
)(1 − 0.9727) = 0.167 V
2 4 1 2
2 LCL = 3 σ 1 − c4 = 0.028 V
2. x chart: Center = x = 0.734 V UCL = x +
3 c4 n
= 0.846 V
LCL = x −
3 c4 n
= 0.622 V
2
Exoetial Defect Distributio: f ( D) =
− D 1 ex D D0 0
∞
∞ − D(1 + Ac D0 ) − D(1 + Ac D0 ) 1 − Ac D − D / D0 1 1 ex Y =∫ e e dD = dD =
0 D0 0 D0 D0 0 0
∞
=> Yex oetial =
1 1 + D0 Ac
7. Use Murhy’s Yield Itegral (Eq. 34): Y = ∫ e − AD f ( D)dD , where: A = 100cm2, f(
D) = 100D+10
0.1
Y=
0.05
∫e
−100 D
(− 100 D + 10)dD
0.1
= 100
0.05
−100 D −100 D ∫ De dD + 10 ∫ e dD
0.05
0.1
=
− 100 −100 D ( AD − 1) 0..1 − 10 e −100 D e 4 0 05 100 10
0.1 0.05
=> Y = 0.094 %
74
CHAPTER 11
1. (a)
A 1 L RC = ρ ε ox = 10 −5 × d 1 × 0.5 × 10 −8 A 1 × (1 × 10 −4 )
= 2000 × (69.03 × 10 −14 ) = 1.38 × 10 − 9 s = 1.38 ns.
(b) For a polysilicon runnr
L A RC = Rsquar ε ox W d 1 = 30 − 4 69.03 × 10 −14 = 2.07 × 10 −
(
)
Thrfor th polysilicon runnr’s RC tim constant is 150 tims largr than th a
luminum runnr.
2. Whn w combin th logic circuits and mmory on th chip, w nd multipl s
upply voltags. For rliability issu, diffrnt oxid thicknsss ar ndd fo
r diffrnt supply voltags. 3. (a) 1 1 + 1
C total =
C Ta 2 O5
C nitrid + 10 = 17.3 Å 7
hnc EOT
3.9
= 75
25
(b) EOT = 16.7 Å.
75