we > BH Chinese Journal Of Electron Devices Vol.30 No.1 Feb. 2007 B30 HLH 2007 2 A A Highly Linear CMOS Wideband Fully-Differential Amplifier Yin Li, Yun Ting-hua» Tang Show-long » Wu Jian-hui (National ASIC System Engineering Research Center, Southeast Univesity, Nanjing 210096) Abstract: A highly linear CMOS wideband fully-differential amplifier is developed, the input stage is the basic differential pair with resistor common-mode feedback end the output stage consists of an push-pull OTA and its feedback network, A better than -60 dB 3rd harmonic distortion at differential output level of 1 V peak-to-peak is obtained by utilizing the source-degeneration resistors and negative feedback technolo- gy. The bandwidth is extended by 15% at the effect of the feedback capacitor, The prototype chip is im- plemented in a 0. 25 ym CMOS technology. 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BORA EEL HDS AeE AERALE SF BER Be ih RL AR 1, HAE f= 36 MHc, SSS HH FL EME (EL 1 V. BL AAR Se Seq it HZ mR A 8 ty a a, ARBRE, OHA AK Row NFHDS, PHAMAELA 2,7 RR, HHS MRE mene. 1 BHEEEV. HIV st Typical Fast 60.99 61.42 HD3/aB #2 GRAMRAR a AL Gain/ABGEND 17.9 “148 4 /MHz 28~115 348 F/M M~1s1 Rea/O 4 NF/AB “4 HDS/dB, 56.3 5 He AXA TBF CMOS TERRES EDR GAM RAR. RP RA BEA RG HR th RRA TR PDE TT A EP HN AEE ARE Ta RE PEMA FIN T R.A AE BF Se PARRA EES HARE HIE AA RET VA I FF Fs BE a dS 3 SANE TRB, Mea ML eA IP SsUa: [1]. 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