THAPAR UNIVERSITY, PATIALA Electronics and Communication Engineering Department Mid Semester Examination EC- 029(Microelectronics) BE (ECE& EIE) Max Marks: 30 Time allowed: 2 Hrs. Name of Instructors: Ankush Kansal & Smarti Kotwal Note: ‘© Attempt all questions. © Assume suitable data if required. © All notations/characters carry their usual meanings Qa | Discuss in detail different types of crystalline defects with suitable | examples 5 Q2. Explain the form: | process in detail. of single cry: ine Si ingot from sand by CZ | Q.3. | What do you mean by Epitaxy? Explain MBE and VPE types of epitaxy in detail. Also discuss defects in epitaxy growth. rite down the various methods of Thin film processing in detail. Q.5. (a) | Calculate the Resistance of structure shown below having Sheet | Resistance of 1009%/ . and the corner represents 0.5 Square. (b) | Find out the Capacitance of a Square with each side 2200,m thick film capacitor if the dielectric constant €= 100 and dielectric film thickness | = 20 um. |3 Zon | 5 ote oem 7 . F pr Om | | | bho prem | | le sl] Joe im | \ yi Re i: 2-0 oun ogee fa at UL oben 0° 5 On 6 im Ae