Sei sulla pagina 1di 16

BASIC ELECTRONICS

BASIC ELECTRONICS OBJECTIVE TYPE QUESTIONS UNIT 1: SEMICONDUCTOR DIODES & APPLICATIONS 1.] Flow of electrons is

OBJECTIVE TYPE QUESTIONS

UNIT 1: SEMICONDUCTOR DIODES & APPLICATIONS

1.]

Flow of electrons is generally termed as

a)

electric current

b) electric shock

c)

semiconductor

d) none of the above

2.] A flow of current through it.

is a material which offers very little resistance to the

a)

good conductor

b) insulator

c)

semiconductor

d) none of the above

3.]

The resistance offered by

is extremely large for the flow of

current through it.

a)

good conductor

b) insulator

c)

semiconductor

d) none of the above

4.] The materials which behave like perfect insulators at low temperatures & at higher temperatures, they behave like a good conductors are termed as

a)

good conductor

b) insulator

c)

semiconductor

d) none of the above

5.]

The conductivity of a semiconductor

with temperature.

a)

increases

b) decreases

c)

can’t say

d) none of the above

6.]

The conductivity of a good conductor

with temperature.

a)

increases

b) decreases

c)

can’t say

d) none of the above

7.]

The resistance of a semiconductor

with temperature.

a)

increases

b) decreases

c)

can’t say

d) none of the above

8.]

The resistance of a good conductor

with temperature.

a)

increases

b) decreases

c)

can’t say

d) none of the above

9.]

The charge of an electron is

a)

1.602*10 +27 Coulomb

b) 1.602*10 -27 Coulomb

c)

1.602*10 +19 Coulomb

d) 1.602*10 -19 Coulomb

10.]

The total number of electrons in an atom depends upon

a)

the atomic mass

b) the atomic weight

c)

the atomic number

d) the atomic size

mass b) the atomic weight c) the atomic number d) the atomic size MAHESH PRASANNA K.,
mass b) the atomic weight c) the atomic number d) the atomic size MAHESH PRASANNA K.,

BASIC ELECTRONICS

BASIC ELECTRONICS 11.] In any atom, the number of electrons in the last orbit (i.e., the

11.] In any atom, the number of electrons in the last orbit (i.e., the outermost orbit or the valence orbit) is limited to

a)

4

b) 8

c)

10

d) 12

12.]

In any atom, the outermost orbit is called

a)

valence orbit

b) energy band

c)

conduction band

d) forbidden band

13.]

The electrons present in the valence orbit are termed as

a)

valence electrons

b) free electrons

c)

can’t say

d) none of the above

14.] The range of energies possessed by the electrons of any one orbit of all atoms is referred as

a)

valence band

b) energy band

c)

conduction band

d) forbidden band

15.]

The energy band in relation to valence electrons is termed as

a)

valence band

b) energy band

c)

conduction band

d) forbidden band

16.]

Electrons which are removed from the valence orbits of atoms, which are

freely available for conduction, are termed as

a)

valence electrons

b) free electrons

c)

can’t say

d) none of the above

17.]

The range of energies possessed by the free electrons is termed as

a)

valence band

b) energy band

c)

conduction band

d) forbidden band

18.] The void (or gap) separating conduction band and valence band, and no electron can exist in this void is termed as

a)

valence band

b) energy band

c)

conduction band

d) forbidden band

19.]

In a metal, the number of valence electrons is

a)

less than 4

b) equal to 4

c)

greater than 4

d) equal to 8

20.]

In

a

semiconductor

material,

the

number

of

valence

electrons

is

a)

less than 4

b) equal to 4

c)

greater than 4

d) equal to 8

21.]

a) less than 4

In an insulator , the number of valence electrons is

b) equal to 4

a) less than 4 In an insulator , the number of valence electrons is b) equal
a) less than 4 In an insulator , the number of valence electrons is b) equal

BASIC ELECTRONICS

BASIC ELECTRONICS c) greater than 4 d) equal to 8 22.] The current which results in

c) greater than 4

d) equal to 8

22.] The current which results in a semiconductor material due to the movement of holes is termed as

a)

hole current

b) electron current

c)

negative current

d) none of the above

23.]

A semiconductor in its pure form is termed as

a)

intrinsic semiconductor

b) extrinsic semiconductor

c)

p-type semiconductor

d) n-type semiconductor

24.]

increase its conductivity is called as

The process of adding impurity to a pure semiconductor material, in order to

a)

dancing

b) doping

c)

creating holes

d) creating electrons

25.] A semiconductor to which an impurity is added with view to increase its conductivity is termed as

a)

intrinsic semiconductor

b) extrinsic semiconductor

c)

p-type semiconductor

d) n-type semiconductor

26.]

If a pentavalent impurity like arsenic or antimony or phosphorus is added to

pure germanium or silicon, a

results.

a)

intrinsic semiconductor

b) extrinsic semiconductor

c)

p-type semiconductor

d) n-type semiconductor

27.]

In a n-type semiconductor material electrons are

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

28.]

In a n-type semiconductor material holes are

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

29.] The pentavalent impurity atom, like arsenic, added to pure germanium material is termed as

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

30.] If a trivalent impurity like gallium or indium or aluminium is added to pure

germanium or silicon, a

results.

a)

intrinsic semiconductor

b) extrinsic semiconductor

c)

p-type semiconductor

d) n-type semiconductor

31.]

In a p-type semiconductor material holes are

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

carriers b) minority charge carriers c) donor atoms d) acceptor atoms MAHESH PRASANNA K., ECE, AIET
carriers b) minority charge carriers c) donor atoms d) acceptor atoms MAHESH PRASANNA K., ECE, AIET

BASIC ELECTRONICS

BASIC ELECTRONICS 32.] In a p-type semiconductor material electrons are a) majority charge carriers b) minority

32.]

In a p-type semiconductor material electrons are

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

33.]

is termed as

The trivalent impurity atom, like gallium, added to pure germanium material

a)

majority charge carriers

b) minority charge carriers

c)

donor atoms

d) acceptor atoms

34.]

In extrinsic semiconductors, conduction of current is due to

a)

electrons only

 

b) holes only

 

c)

both electrons and holes

d) neither electrons nor holes

35.]

Doping

an

intrinsic

semiconductor

with

pentavalent

impurity

atom

a)

raises the Fermi level

b) lowers the Fermi level

c)

do not affect the Fermi level

d) none of the above

36.]

Doping an intrinsic semiconductor with trivalent impurity atom

 

a)

raises the Fermi level

b) lowers the Fermi level

 

c)

do not affect the Fermi level

d) none of the above

37.] In a pure semiconductor, the Fermi level lies forbidden energy gap.

 

of the

a)

exactly in the middle

b) at the lower part

 

c)

at the upper part

 

d) none of the above

38.] In a p-n junction, the potential built across the junction, after diffusion has stopped, is termed as

a)

barrier potential

b) developed potential

c)

p-n potential

d) none of the above

39.]

The barrier potential is about

of germanium.

a)

0.1V

b) 0.3V

c)

0.7V

d) 1.5V

40.]

The barrier potential is about

of silicon.

a)

0.1V

b) 0.3V

c)

0.7V

d) 1.5V

41.] If an external voltage is applied across the p-n junction such that it

neutralizes the barrier potential and causes conduction through the junction, the p- n junction is said to be

a)

forward biased

b) reverse biased

c)

un-biased

d) no-biased

to be a) forward biased b) reverse biased c) un-biased d) no-biased MAHESH PRASANNA K., ECE,
to be a) forward biased b) reverse biased c) un-biased d) no-biased MAHESH PRASANNA K., ECE,

BASIC ELECTRONICS

BASIC ELECTRONICS 42.] If an external voltage is applied across the p-n junction such that the

42.] If an external voltage is applied across the p-n junction such that the

depletion layer widens and the barrier potential increases, the p-n junction is said to be

a) forward biased

c) un-biased

b) reverse biased d) no-biased

43.]

a) forward biased

c) un-biased

A p-n junction conducts when it is

b) reverse biased d) no-biased

44.]

A p-n junction blocks conduction when it is

a)

forward biased

b) reverse biased

c)

un-biased

d) no-biased

45.]

direction of drifting electrons.

a) same

c) can’t say

The direction of conventional current is always

b) opposite d) none of the above

46.]

The slope of DC load line is

to

the

a)

1/I L

b) 1/V L

c)

1/R L

d) 1/I f

47.]

The I av for a half-wave rectifier is

a)

I m /

b) I m /2

c)

2I

m /

d) I m /2

48.]

The I RMS for a half-wave rectifier is

a)

I m

/

b) I m /2

c)

2I

m /

d) I m /2

49.]

The I av for a full-wave rectifier is

a)

I m

/

b) I m /2

c)

2I m /

d) I m /2

50.]

The I RMS for a full-wave rectifier is

a)

I m

/

b) I m /2

c)

2I

m /

d) I m /2

51.]

The efficiency of a half-wave rectifier is

a)

40.6%

b) 81.2%

c)

0.483%

d) 1.21%

52.]

The efficiency of a full-wave rectifier is

a)

40.6%

b) 81.2%

c)

0.483%

d) 1.21%

a full-wave rectifier is a) 40.6% b) 81.2% c) 0.483% d) 1.21% MAHESH PRASANNA K., ECE,
a full-wave rectifier is a) 40.6% b) 81.2% c) 0.483% d) 1.21% MAHESH PRASANNA K., ECE,

BASIC ELECTRONICS

BASIC ELECTRONICS 53.] The ripple factor of a half-wave rectifier is a) 40.6 b) 81.2 c)

53.]

The ripple factor of a half-wave rectifier is

a)

40.6

b) 81.2

c)

0.483

d) 1.21

54.]

The ripple factor of a full-wave rectifier is

a)

40.6

b) 81.2

c)

0.483

d) 1.21

55.]

An inductor

to pass through it.

a)

allows DC

b) blocks DC

c)

allows AC

d) blocks AC

56.]

A capacitor

to pass through it.

a)

allows DC

b) blocks DC

c)

allows AC

d) blocks AC

57.]

The switch off time of diodes is longer due to

a)

the diffusion capacitance

b) the forward bias

c)

the reverse bias

d) none of the above

UNIT 2 & 3: TRANSISTORS & BIASING METHODS

1.]

The direction of arrow head placed on the emitter of a transistor represents

a)

the direction of motion of holes

b) the direction of motion of electrons

c)

both (a) and (b)

d) none of the above

2.]

The direction of flow of electrons is

to the direction of motion

of holes.

a)

same as

b) opposite

c)

parallel

d) perpendicular

3.]

During normal working of transistor as amplifier, the emitter diode is

a)

unbiased

b) forward biased

c)

reverse biased

d) none of the above

4.]

During normal working of transistor as amplifier, the collector diode is

a)

unbiased

b) forward biased

c)

reverse biased

d) none of the above

5.] The reverse current which results in a transistor due to minority charge carriers across the collector-to-base junction is called as

a) base current

b) emitter current

the collector-to-base junction is called as a) base current b) emitter current MAHESH PRASANNA K., ECE,
the collector-to-base junction is called as a) base current b) emitter current MAHESH PRASANNA K., ECE,

BASIC ELECTRONICS

BASIC ELECTRONICS c) collector current d) collector-to-base leakage current 6.] A transistor can be visualized

c)

collector current

d) collector-to-base leakage current

6.]

A transistor can be visualized as a

port network.

a)

one

b) two

c)

three

d) four

7.] Varying the input current by varying the input voltage at constant output voltage is

a)

static input characteristics

b) static output characteristics

c)

transistor i/o characteristics

d) none of the above

8.] Varying the output current by varying the output voltage at constant input current is

a)

static input characteristics

b) static output characteristics

c)

transistor i/o characteristics

d) none of the above

9.] The ratio of change in collector current to the change in emitter current at constant collector to base voltage is

a)

α

b) β

c)

γ

d) π

10.] The ratio of change in collector current to the change in base current at constant collector to emitter voltage is

a)

α

b) β

c)

γ

d) π

11.]

The ratio of change in emitter current to the change in base is

a)

α

b) β

c)

γ

d) π

12.]

output resistance.

A

circuit has a very high input resistance and very low

a)

common base

b) common emitter

c)

common collector

d) none of the above

13.]

In the saturation region, the emitter-base & collector-base junctions are biased.

a)

forward

b) reverse

c)

unbiased

d) none of these

14.]

In the cut-off region, the emitter-base & collector-base junctions are biased.

a)

forward

b) reverse

c)

unbiased

d) none of these

15.]

is called

a) Q Point

The intersection of DC load line and the output characteristics of a transistor

b) quiescent Point

of DC load line and the output characteristics of a transistor b) quiescent Point MAHESH PRASANNA
of DC load line and the output characteristics of a transistor b) quiescent Point MAHESH PRASANNA

BASIC ELECTRONICS

BASIC ELECTRONICS c) operating Point d) all of these 16.] The biasing circuit which gives most

c) operating Point

d) all of these

16.]

The biasing circuit which gives most stable operating point is

a)

base bias

b) collector-to-base bias

c)

voltage-divider bias

d) none of these

17.]

The collector-to-base bias circuit is also known as

a) base bias

c) voltage feedback bias circuit

b) voltage-divider bias d) none of these

18.]

The reverse saturation current doubles for every

temperature.

a)

40

b) 30

c)

20

d) 10

19.]

The

reverse

saturation

current

for

temperature.

 

a)

doubles

 

b) triples

c)

quadruples

 

d) none of these

every

0 C

10 0 C

rise

rise

in

in

20.]

I CBO doubles for every

0 C rise in temperature.

a)

40

b) 30

c)

20

d) 10

21.]

I CBO

a)

doubles

quadruples

for every 10 0 C rise in temperature. b) triples

c)

d) none of these

22.] The stability factor ‘S’ is the rate change of respect to reverse saturation current.

current with

a)

emitter

b) base

c)

collector

d) none of these

23.] α is the ratio of change in

current at constant collector to base voltage.

current to the change in emitter

a)

emitter

b) base

c)

collector

d) none of these

24.]

at constant collector to emitter voltage.

β is the ratio of change in

current to the change in base current

a)

emitter

b) base

c)

collector

d) none of these

25.]

γ is the ratio of change in

current to the change in base current.

a)

emitter

b) base

c)

collector

d) none of these

base current. a) emitter b) base c) collector d) none of these MAHESH PRASANNA K., ECE,
base current. a) emitter b) base c) collector d) none of these MAHESH PRASANNA K., ECE,

BASIC ELECTRONICS

BASIC ELECTRONICS 26.] α is the ratio of change in collector current to the change in

26.] α is the ratio of change in collector current to the change in current at constant collector to base voltage.

a) emitter

c) collector

b) base d) none of these

27.] β is the ratio of change in collector current to the change in current at constant collector to emitter voltage.

a)

emitter

b) base

c)

collector

d) none of these

28.]

current.

γ is the ratio of change in emitter current to the change in

a)

emitter

b) base

c)

collector

d) none of these

29.]

The emitter area in a transistor is considerably

than the

collector area.

 

a)

smaller

b) greater

c)

smaller or greater

d) none of these

30.]

The collector area is slightly

doped than the emitter.

a)

more

b) less

c)

more or less

d) none of these

31.] The depletion layer width at the collector junction is depletion layer width at the emitter junction.

than the

a)

more

b) less

c)

more or less

d) none of these

32.]

In a transistor, the emitter area is

doped.

a)

heavily

b) lightly

c)

moderately

d) none of these

33.]

In a transistor, the base region is

doped.

a)

heavily

b) lightly

c)

moderately

d) none of these

34.]

In a transistor, the collector area is

doped.

a)

heavily

b) lightly

c)

moderately

d) none of these

35.]

region.

In a transistor, the depletion layer penetrates deeply into the

a)

base

b) emitter

c)

collector

d) none of these

36.]

In a

, the current is mainly due to electrons.

d) none of these 36.] In a , the current is mainly due to electrons. MAHESH
d) none of these 36.] In a , the current is mainly due to electrons. MAHESH

BASIC ELECTRONICS

BASIC ELECTRONICS a) PNP transistor b) NPN transistor c) BJT transistor d) UJT transistor 37.] a)

a)

PNP transistor

b) NPN transistor

c)

BJT transistor

d) UJT transistor

37.]

a) PNP transistor

c) BJT transistor

In a

, the current is mainly due to holes. b) NPN transistor d) UJT transistor

38.] In CB configuration, when reverse bias voltage V CB increases, the width of the depletion region also increases, which reduces the electrical base width. This effect is called as

a)

early effect

b) base width modulation

c)

(a) or (b)

d) none of these

39.] In CB configuration, when reverse bias voltage V CB increases above the

V CB max , increase in depletion region is such that it penetrates into base until it makes contact with emitter-base depletion region. This condition is called

a)

punch-through effect

b) reach-through effect

c)

(a) or (b)

d) none of these

40.]

circuit.

a) more

c) more or less

The collector-to-base bias provides

41.]

a) least

c) more or less

The voltage divider bias provides the

stability than the base bias

b) less d) none of these

stability against h FE variations. b) greatest d) none of these

UNIT 5: AMPLIFIERS & OSCILLATORS

1.]

Audio amplifiers can amplify signals of frequencies which lie in the range of

a)

20Hz to 20KHz

b) 20Hz to 20MHz

c)

20Hz to 200KHz

d) 20Hz to 200MHz

2.]

In a

amplifier, the collector current flows throughout the input

signal cycle.

a) class A

c) class C

b) class B d) class AB

3.] In a

positive half cycles of the input signal.

amplifier, the collector current flows only during the

a)

class A

b) class B

c)

class C

d) class AB

4.]

In a

amplifier, the collector current flows for less than half of

the period of the input signal.

the collector current flows for less than half of the period of the input signal. MAHESH
the collector current flows for less than half of the period of the input signal. MAHESH

BASIC ELECTRONICS

BASIC ELECTRONICS a) class A b) class B c) class C d) class AB 5.] In

a)

class A

b) class B

c)

class C

d) class AB

5.] In a

of the input signal period, but not throughout the full cycle.

amplifier, the collector current flows for more than half

a)

class A

b) class B

c)

class C

d) class AB

6.]

The coupling capacitor, C C , in a R-C coupled amplifier is used to

a)

bypass the output to ground

b) couple the output to next stage

c)

bypass the emitter current

d) couple the emitter current to next stage

7.]

The range of frequencies in which the amplifier gain is either equal to greater

than 70.7% of the maximum gain is called as

a)

channel-width

b) frequency-width

c)

band-width

d) none of these

8.]

The range of frequencies at the limits of which, the voltage gain falls by 3dB

is called as

a)

channel-width

b) frequency-width

c)

band-width

d) none of these

9.]

In a common-emitter amplifier, there is a phase shift of

between

input and output voltages.

a)

90 0

b) 180 0

c)

360 0

d) 0 0

10.]

When the phase of the feedback signal is same as that of the input, then it is

called

a)

positive feedback

b) negative feedback

c)

no feedback

d) none of these

11.]

When the phase of the feedback signal is out of phase with that of the input,

then it is called

a)

positive feedback

b) negative feedback

c)

no feedback

d) none of these

12.]

Tank circuit comprises of

a)

an inductor in parallel with a capacitor

b)

an inductor in series with a capacitor

c)

an inductor in parallel with a resistor

d) an inductor in series with a resistor

13.]

R-C oscillators are usually used in

range.

a)

audio frequency

b) radio frequency

c)

video frequency

d) ultra high frequency

b) radio frequency c) video frequency d) ultra high frequency MAHESH PRASANNA K., ECE, AIET Page
b) radio frequency c) video frequency d) ultra high frequency MAHESH PRASANNA K., ECE, AIET Page

BASIC ELECTRONICS

BASIC ELECTRONICS UNIT 6: OPERATIONAL AMPLIFIERS 1.] The characteristics of voltage. changes with application of external

UNIT 6: OPERATIONAL AMPLIFIERS

1.]

The characteristics of

voltage.

changes with application of external

a)

an active element

b) a passive element

c)

both (a) and (b)

d) neither (a) nor (b)

2.]

The characteristics of

will not change on application of

external voltage.

a)

an active element

b) a passive element

c)

both (a) and (b)

d) neither (a) nor (b)

3.]

In

,

the outputs are proportional to inputs.

a)

digital ICs

b) linear ICs

c)

both (a) and (b)

d) neither (a) nor (b)

4.]

In a

,

the inputs and outputs can take only two values; 0 and

1.

a)

digital ICs

b) linear ICs

c)

both (a) and (b)

d) neither (a) nor (b)

5.]

The voltage gain of an ideal Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

6.]

The input impedance of an ideal Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

7.]

The output impedance of an ideal Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

8.]

The bandwidth of an ideal Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

9.]

When equal voltages are applied to two input terminals of an ideal Op-Amp,

the output is

 

a) infinity

 

b) zero

of an ideal Op-Amp, the output is   a) infinity   b) zero MAHESH PRASANNA K.,
of an ideal Op-Amp, the output is   a) infinity   b) zero MAHESH PRASANNA K.,

BASIC ELECTRONICS

BASIC ELECTRONICS c) very high d) very low 10.] The voltage gain of a practical Op-Amp

c)

very high

d) very low

10.]

The voltage gain of a practical Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

11.]

The input impedance of a practical Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

12.]

The output impedance of a practical Op-Amp is

a)

infinity

b) zero

c)

very high

d) very low

13.]

When equal voltages are applied to two input terminals of a practical Op-

Amp, the output is

a)

infinity

b) zero

c)

very high

d) very low

14.]

The ratio of the differential gain of an Op-Amp to its common mode gain is

a)

PSRR

b) input off-set current

c)

output off-set current

d) CMRR

15.]

inputs are zero. This is called

In a practical Op-Amp, there will be a small output voltage even when the

a)

output off-set current

b) output off-set voltage

c)

input off-set current

d) input off-set voltage

16.]

The DC voltage which makes the output off-set voltage zero, when the other

terminal is zero is called

a)

output off-set current

b) output off-set voltage

c)

input off-set current

d) input off-set voltage

17.]

The maximum rate at which the Op-Amp output can change is

a)

run rate

b) ratio rate

c)

slew rate

d) none of these

18.]

Slew rate is expressed in terms of

c) slew rate d) none of these 18.] Slew rate is expressed in terms of MAHESH
c) slew rate d) none of these 18.] Slew rate is expressed in terms of MAHESH

BASIC ELECTRONICS

BASIC ELECTRONICS a) volts/µs b) volts-µs c) µs/volts d) µs-volts 19.] applied signal becomes zero is

a)

volts/µs

b) volts-µs

c)

µs/volts

d) µs-volts

19.]

applied signal becomes zero is known as

The time period for which the trace remains on a fluorescent screen after the

a)

existence

b) shadow

c)

persistence

d) trace

20.]

The time-base generator in a CRO is used to generate

a)

the saw-tooth voltage

b) the square wave

c)

the DC voltage

d) the AC voltage

21.]

When the input is applied to the inverting input terminal of an Op-Amp, then

the output is

with the input.

a)

90 0 out of phase

b) 180 0 out of phase

c)

360 0 out of phase

d) in phase

22.]

then the output is

a) 90 0 out of phase

c) 360 0 out of phase

When the input is applied to the non-inverting input terminal of an Op-Amp,

with the input. b) 180 0 out of phase d) in phase

UNIT 7: COMMUNICATION SYSTEMS & NUMBER SYSTEMS

1.]

of the modulating signal, then it is

If the amplitude of the carrier wave is altered in accordance with the strength

a)

amplitude modulation

b) frequency modulation

c)

amplitude communication

d) frequency communication

2.]

If the frequency of the carrier wave is altered in accordance with the strength

of the modulating signal, then it is

a)

amplitude modulation

b) frequency modulation

c)

amplitude communication

d) frequency communication

3.]

The process of getting back the modulating signal from the modulated wave

is

a)

modulation

b) re-modulation

c)

demodulation

d) none of these

4.]

The modulation index ‘ m ’ for amplitude modulation is

a)

V c /V m

b) V c * V m

c)

V m + V c

d) V m /V c

V c /V m b) V c * V m c) V m + V c
V c /V m b) V c * V m c) V m + V c

BASIC ELECTRONICS

BASIC ELECTRONICS 5.] The modulation index ‘ m f ’ for frequency modulation is a) 

5.]

The modulation index ‘ m f ’ for frequency modulation is

a)

f/f m

b) f * f m

c)

f - f m

d) f m /f

6.]

Usually, the intermediate frequency is

a)

455 MHz

b) 455 KHz

c)

455 Hz

d) 455 GHz

9.]

The decimal equivalent of binary number 1110 is

a)

15

b) 16

c)

18

d) 14

10.]

11011 2 = X 10 , then

a)

X = 27

b) X = 37

c)

X = 17

d) X = 12

11.]

The 1’s compliment of 1110 is

a)

1111

b) 0001

c)

0010

c) 0000

12.]

The 2’s compliment of 1110 is

a)

1111

b) 0001

c)

0010

d) 0000

13.]

If 47 10 = X 8 , then

a)

X = 37

b) X = 27

c)

X = 74

d) X = 57

14.]

The octal equivalent of 001001011011 (2) is

a)

3311 (8)

b) 3113 (8)

c)

1133 (8)

d) 1331 (8)

15.]

If 11021110 2 = X 16 , then

a)

X = AB

b) X = CD

c)

X = EF

d) X = DE

16.]

If 58 10 = X BCD , then

a)

X = 01011000

b) X = 01010001

c)

X = 10101000

c) 10100001

, then a) X = 01011000 b) X = 01010001 c) X = 10101000 c) 10100001
, then a) X = 01011000 b) X = 01010001 c) X = 10101000 c) 10100001

BASIC ELECTRONICS

BASIC ELECTRONICS 1.] UNIT 8: DIGITAL ELECTRONICS The OR operation implies a) boolean addition b) boolean

1.]

UNIT 8: DIGITAL ELECTRONICS The OR operation implies

a)

boolean addition

b) boolean multiplication

c)

Boolean subtraction

d) boolean division

2.]

The AND operation implies

a)

boolean addition

b) boolean multiplication

c)

Boolean subtraction

d) boolean division

3.]

The output of a NAND gate is

,

when all the inputs are high.

a)

low

b) high

c)

low or high

d) none of these

4.]

The output of a NOR gate is

,

when all the inputs are low.

a)

low

b) high

c)

low or high

d) none of these

5.]

A bubbled AND gate and a

are equivalent.

a)

XOR gate

b) XNOR gate

c)

NOR gate

d) NAND gate

6.]

A bubbled OR gate and a

are equivalent.

a)

XOR gate

b) XNOR gate

c)

NOR gate

d) NAND gate

***

By MAHESH PRASANNA K., Dept. of E & C, AIET.

gate d) NAND gate *** By – MAHESH PRASANNA K. , Dept. of E & C,
gate d) NAND gate *** By – MAHESH PRASANNA K. , Dept. of E & C,