Instructor: Mustafa ATANAK

TA : zen YELBAI

ANADOLU UNIVERSITY

DEPT. OF ELECTRICAL AND ELECTRONICS

ENGINEERING

EEM 328
ELECTRONICS LABORATORY

Experiment 4: BJT Biasing

Date : 27.11.2008
Group Name: B
Partner :
Osman GLERCAN
16169230356
a) Purpose

The purpose of this experiment is to study various biasing circuits, and calculating their
operating points.

b) Background and Theoretical Discussion

Supply voltages and resistors bias a transistor; that is, they establish a specific set of dc
terminal voltages and currents, thus determining a point of active-mode operation (called the
quiescent point or Q point). Usually, quiescent values are unchanged by the application of an
ac signal to the circuit.

With the universal bias arrangement of Fig. 1 (a), only one dc power supply (V CC) is needed
to establish active-mode operation. Use of the Thvenin equivalent of the circuit to the left of
a; b leads to the circuit of Fig. 1 (b), where

If we neglect leakage current so that IEQ =(+1).IBQ and assume the emitter-to-base voltage
VBEQ is constant ~0.7V and ~0.3V for Si and Ge, respectively), then KVL around the emitter
loop of Fig. 1 (b) yields

which can be represented by the emitter-loop equivalent bias circuit of Fig. 1 (c). Solving this
for IEQ and noting that

we obtain
 Figure 1.

If component values and the worst-case value are such that

then IEQ (and thus ICQ) is nearly constant, regardless of changes in ; the circuit then has
independent bias.

From Fig. 1 (c) it is apparent that the family of collector chaacteristics is described by the
mathematical relationship iC = f . (VCE ; iB) with independent variable VCE and the parameter
iB. We assume that the collector circuit can be biased so as to place the Q point anywhere in
the active region.
Osman Glercan
16169230356
Experiment 4

Conclusion:

In this experiment, we studied a couple of BJT biasing circuit and calculated their operating
points. First of all, we measured the transistors value, and we implemented a circuit to obtain
IB and IC values. By changing the bias current (IB), we saw that the collector current(IC) changed
with almost times. We noted these IC and IB readings and calculated their values by IC / IB.
Then we plotted the transistors gain curve by drawing vs. IC. Secondly, we designed a bias
circuit without feedback, its emitter connected to ground directly. We calculated its bias
resistance as RB = (VCC VBE) / IB and collector resistance RC = VCC / IC. Thirdly, by adding a
resistor between emitter and ground, we made the emitter feedback bias circuit. This resistor RE
causes negative feedback and reduces the changes in the operating point. Fourthly, we designed
the collector feedback bias circuit. In this circuit, the emitter resistor RE remained, however the
bias resistor RB provided feedback from collector. Lastly, we built voltage divider biasing circuit
which is the most common and stable circuit among single source biasing circuits. R1 and R2
perform the voltage dividing, and having been selected higher, they also restrict the current to
consume less power with respect to the transistor. In addition to these circuits, we also
implemented BJT biasing circuits with power transistors. Because of their low values, the
current gain may be low; however, they are able to provide high power for some circuits. To sum
up, by using BJTs, we learned the biasing circuits and examined how their operating points can
be calculated.