SEMICONDUCTOR

KTC2800

TECHNICAL DATA

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION.

A
B

FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTA1700.

C
E
F

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

160

Collector-Emitter Voltage

VCEO

160

Emitter-Base Voltage

VEBO

Collector Current

IC

1.5

Base Current

IB

1.0

Collector Power

Ta=25

Dissipation

Tc=25

Junction Temperature
Storage Temperature Range

DIM MILLIMETERS
8.3 MAX
A
5.8
B
C
0.7
_ 0.1
3.1+
D
3.5
E
_ 0.3
11.0 +
F
2.9 MAX
G
1.0 MAX
H
1.9 MAX
J
_ 0.15
0.75 +
K
14.0 MIN
L
_ 0.1
2.3 +
M
_ 0.15
0.75 +
N
1.6
O
3.4 MAX
P

MAXIMUM RATING (Ta=25)

1.5

PC

10

M
O

N
1

1. EMITTER
2. COLLECTOR
3. BASE

Tj

150

Tstg

-55150

TO-126

ELECTRICAL CHARACTERISTICS (Ta=25)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=160V, IE=0

1.0

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

1.0

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

160

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0

5.0

DC Current Gain

hFE(Note)

VCE=5V, IC=100mA

70

240

VCE(sat)

IC=500mA, IB=50mA

1.5

Base-Emitter Voltage

VBE

VCE=5V, IC=500mA

1.0

Transition Frequency

fT

VCE=10V, IC=100mA

100

MHz

VCB=10V, IE=0, f=1MHz

25

pF

Collector-Emitter Saturation Voltage

Collector Output Capacitance

Note: hFE Classification

1998. 10. 31

Cob

O:70140 , Y:120240

Revision No : 1

1/3

KTC2800

I C - VCE

hFE - I C

300

COMMON
EMITTER

6mA

Tc=100 C

DC CURRENT GAIN h FE

mA

0.8

A
8m

2m

20

Tc=25 C

0.6

4mA

0.4

I B =2mA

0.2

Tc=25 C

100
Tc=-25 C

50
30
COMMON EMITTER
VCE =5V

0mA

0
0

10

12

14

10
0.003

16

0.01

COLLECTOR-EMITTER VOLTAGE V CE (V)

0.03

1.0
I C /I B =10

0.5
0.3

C
100
Tc=

0.1

Tc=25 C
Tc=-25 C

0.05
0.03
0.003

0.01

0.03

0.1

0.3

0.8
0.6
0.4
0.2
0

COMMON
EMITTER
VCE =5V
Tc=100 C

COMMON EMITTER

COLLECTOR CURRENT I C (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)

I C - V BE

0.2

COLLECTOR CURRENT I C (A)

100
50
COMMON EMITTER
VCE =10V
Tc=25 C

0
5

10

30

100

300

COLLECTOR CURRENT I C (mA)

Revision No : 1

1k

COLLECTOR POWER DISSIPAZTION P C (W)

300

30

0.4

0.6

0.8

1.0

1.2

1.4

BASE-EMITTER VOLTAGE VBE (V)

f T - IC
TRANSITION FREQUENCY f T (MHz)

0.3

COLLECTOR CURRENT I C (A)

V CE(sat) - I C

1998. 10. 31

0.1
3

Tc=25 C
Tc=-25 C

COLLECTOR CURRENT I C (A)

1.0

Pc - Ta
30

1 Tc=Ta
INFINITE HEAT SINK
2 NO HEAT SINK

25
20
15
1

10
5

0
0

20

40

60

80

100 120 140 160 180

AMBIENT TEMPERATURE Ta ( C)

2/3

KTC2800

SAFE OPERATING AREA

5

I C MAX
(CONTINUOUS)

1.5
1

IT

s
1m

0m

LI
M

ms

0.3

S/B

10

DC

0.5

10

COLLECTOR CURRENT I C (A)

SINGLE NONREPETITIVE
PULSE Tc=25 C

I C MAX(PULSED)

ED

0.1
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE
IN TEMPERATURE

0.05
0.02
5

10

30

50

100

300

COLLECTOR-EMITTER VOLTAGE V CE (V)

1998. 10. 31

Revision No : 1

3/3

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