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IRFP150N
HEXFET Power MOSFET
l
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VDSS = 100V
RDS(on) = 0.036W
Description
ID = 42A
TO-247AC
Max.
Units
42
30
140
160
1.1
20
420
22
16
5.0
-55 to + 175
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RqJC
RqCS
RqJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.24
0.95
40
C/W
IRFP150N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
100
2.0
14
Typ.
0.11
11
56
45
40
IDSS
LD
5.0
LS
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1900
450
230
V(BR)DSS
DV(BR)DSS/DTJ
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.036
W
VGS = 10V, ID = 23A
4.0
V
VDS = VGS, ID = 250A
S
VDS = 25V, ID = 22A
25
VDS = 100V, VGS = 0V
A
250
VDS = 80V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
110
ID = 22A
15
nC VDS = 80V
58
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 22A
ns
RG = 3.6W
6mm (0.25in.)
nH
G
from package
VGS = 0V
pF
VDS = 25V
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
42
showing the
A
G
integral reverse
140
S
p-n junction diode.
1.3
V
TJ = 25C, IS =23A, VGS = 0V
180 270
ns
TJ = 25C, IF = 22A
1.2 1.8
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
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IRFP150N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
4.5V
20us PULSE WIDTH
TJ = 25 oC
1
0.1
10
100
TJ = 25 o C
TJ = 175 o C
10
6.0
7.0
8.0
9.0
10.0
10
100
3.0
5.0
1000
1
4.0
1
0.1
100
4.5V
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 36A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
TJ , Junction Temperature (o C)
IRFP150N
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
3000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
20
3500
0
1
10
ID = 22A
VDS = 80V
VDS = 50V
VDS = 20V
16
12
100
60
80
100
120
1000
1000
40
100
10us
100
10
100us
10
1ms
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
20
1.6
10ms
TC = 25 o C
TJ = 175 o C
Single Pulse
1
1
10
100
1000
IRFP150N
50
RD
VDS
VGS
40
D.U.T.
RG
-VDD
30
10V
Pulse Width 1 s
Duty Factor 0.1 %
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( C)
10%
VGS
td(on)
tr
t d(off)
tf
10
1
D = 0.50
0.20
0.1
P DM
0.10
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
IRFP150N
15V
VDS
D R IVE R
D .U .T
RG
+
V
- DD
IA S
20V
0 .01
tp
1000
ID
9.0A
16A
BOTTOM 22A
TOP
800
600
400
200
0
25
V (B R )D S S
50
75
100
125
150
175
tp
IAS
Current Regulator
Same Type as D.U.T.
50K
QG
12V
.2F
.3F
+
V
- DS
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
Charge
IG
ID
IRFP150N
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
IRFP150N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
0.25 (.010) M
D B M
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
NOTES:
5.50 (.217)
4.50 (.177)
1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
T O -247-A C .
3
-C -
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LE A D A S S IG N M E N TS
1
2
3
4
G A TE
D R A IN
SOURCE
D R A IN
IN TE R N A TIO N A L
R E C T IF IE R
LOGO
PART NUMBER
IR F P E 3 0
3A 1 Q 9 3 0 2
ASSEMBLY
LOT CODE
D A TE C O D E
(Y YW W )
YY = YEAR
W W W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 10/98
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