Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
IRF830A
SMPS MOSFET
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
VDSS
Rds(on) max
ID
500V
1.40
5.0A
TO-220AB
GDS
Max.
5.0
3.2
20
74
0.59
30
5.3
-55 to + 150
Units
A
W
W/C
V
V/ns
C
Notes
www.irf.com
1
5/4/00
IRF830A
Static @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
IGSS
Min.
500
2.0
Typ.
0.60
Max. Units
Conditions
V
VGS = 0V, ID = 250A
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.8
Typ.
10
21
21
15
620
93
4.3
886
27
39
Max. Units
Conditions
S
VDS = 50V, ID = 3.0A
24
ID = 5.0A
6.3
nC
VDS = 400V
11
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ID = 5.0A
ns
RG = 14
RD = 49,See Fig. 10
VGS = 0V
VDS = 25V
pF
= 1.0MHz, See Fig. 5
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Typ.
Max.
Units
230
5.0
7.4
mJ
A
mJ
Typ.
Max.
Units
0.50
1.7
62
C/W
Thermal Resistance
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
5.0
showing the
A
G
integral reverse
20
S
p-n junction diode.
1.5
V
TJ = 25C, IS = 5.0A, VGS = 0V
430 650
ns
TJ = 25C, IF = 5.0A
2.0 3.0
C
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRF830A
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
TOP
4.5V
0.1
0.01
0.1
10
10
4.5V
0.1
1
100
2.5
10
TJ = 150 C
TJ = 25 C
1
V DS = 50V
20s PULSE WIDTH
5.0
6.0
7.0
www.irf.com
100
100
0.1
4.0
10
8.0
ID = 5.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
TJ , Junction Temperature ( C)
IRF830A
V GS =
C iss =
C rs s =
C oss =
20
0V,
f = 1M Hz
Cg s + C g d , Cd s SHO RTE D
C gd
Cds + C gd
10000
C, Capacitance (pF)
1000
C iss
100
C oss
10
C rss
1
10
100
VDS = 400V
VDS = 250V
VDS = 100V
16
12
A
1
ID = 5.0A
1000
12
16
20
24
100
100
10
TJ = 150 C
TJ = 25 C
0.1
0.2
0.4
0.6
0.8
1.0
10us
10
100us
1ms
1
10ms
V GS = 0 V
1.2
0.1
TC = 25 C
TJ = 150 C
Single Pulse
10
100
1000
10000
www.irf.com
IRF830A
5.0
RD
VDS
VGS
4.0
D.U.T.
RG
-VDD
3.0
10V
Pulse Width 1 s
Duty Factor 0.1 %
2.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( C)
10%
VGS
td(on)
tr
t d(off)
tf
10
D = 0.50
0.20
0.10
P DM
0.1
0.05
t1
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
www.irf.com
IRF830A
500
D R IV E R
VDS
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1
tp
1 5V
TOP
400
BOTTOM
ID
2.2A
3.2A
5.0A
300
200
100
0
25
50
75
100
125
150
10 V
790
QGD
VG
Charge
50K
12V
.2F
.3F
D.U.T.
V D S a v , A valanche V oltage (V )
QGS
785
780
775
+
V
- DS
770
1.0
2.0
3.0
4.0
5.0
I a v , A v alanc he C urrent (A )
3mA
IG
ID
A
0.0
VGS
www.irf.com
IRF830A
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
www.irf.com
IRF830A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B -
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A -
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
3X
LE AD A S SIG NME NT S
1 - GA TE
2 - DR A IN
3 - S OU RCE
4 - DR A IN
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
2.54 (.100)
2X
N OT ES :
1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I Y14.5M, 1982.
2 CO NT RO LLING D IMEN S ION : IN CH
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NUMBER
IR F 1 0 1 0
9246
9B
1M
D ATE C ODE
(Y Y W W )
Y Y = YE A R
W W = W EEK
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
www.irf.com