MITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W, FM MOBILE RADIO ‘OUTLINE DRAWING Gmesons mmm | [ BLOCK DIAGRAM se sour | znetos a ‘ o pre A 7 3 nnn ra, RF PUT corte bO SUaRLY veea Fal 6 SUPPLY Gro sme ourruT Sono rw H6 ABSOLUTE MAXIMUM RATINGS (To= 25°C uness othemise noted) Srbal Puaeter Condiions Hatha Ta] Ves | Sosa vores 7 v r crrent = 3 x Pecan [Tneut_power ea ea 34 Ww Potnm | Outoct power Sura a5 above 20 w] Teor | Operation crv TemDCy Sern ob above [ww [Oe Tag [Storage torceratue t =a 1106 Now. Above purrs we GuraTind Waieende ELECTRICAL CHARACTERISTICS (Tc = 25° vriess othewise nots) rc Smoot | Parameter Test condtions = 7 Freaveney range | Wie 7 but power w aT Total efficiency Gaenee % Bio —{ Zo~ 2-502 Be. 30 Be Din = 7 Veo= 18 Po = 14W (Pn : controlled) No degradation i 7 Load VSWR tolerence eL=20:1 (All phase) ‘or destroy io=500 | Now Rio ovareiea wingh tae wd conlions Be mbt 0 chron ar aeraMITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W, FM MOBILE RADIO ‘TYPICAL PERFORMANCE DATA ‘OUTPUT POWER, TOTAL EFFICIENCY, > OUTPUT PoweR, TOTAL EFPICIENCY, INPUT VSWR VS. FREQUENCY & VS. INPUT POWER = 20 1 be rs rTe= 35% |? . = «EST - g 19 BF 16/eo~ 125y eo & S _ : ae BE eo % 2 ¢ é é 8 po lo E 8 oe 8 5 od is Lk ; ae ae 5 TOE OT OI OF 08 FREQUENCY f (MHz) & INPUT POWER Pin (W) ouTPuT POWER Vs.0C SUPPLY WoLTAGe OUTPUT POWERS, 1t VOLTAGE 2» . oy _ moa . tt _[eeiaie |_| tor s [RBS, SB rofvccrtasy — é é 05W _ { .” 2 Sow z 5 5 4 2 x z docs 3 L688 : I ol [ i Ke 8 3 8 06 SUPPLY VOLTAGE Ye 69 tet VOLTAGE veer 09 a ELECTRICMITSUBISHI RF POWER MODULE. M57747 144-148MHz, 12.5V, 13W, FM MOBILE RADIO DESIGN CONSIDERATION OF HEAT RADIATION Please refer to following consideration when designing heat sink. 1. Junction temperature of Incorporated translators at standard operation. (2) Thermal resistance between junction and package of incorporated transistors. 1) First staoe transistor Ranu-at = 10°C/ (Tye) ) Final stage transistor Raine = 3°0/ WOT yo) (2) Junction temperature of incorporated transistors at standard operation, © Conditions for standard operation. Po= 18W, Veo = 12.8V, Pa = 0.2W, aT = 48% (minimum rating). Port) = 25W, r= 22ACIni® 0.458, Ira = 1.754) NNotet : Qutout power of the first stage transistor Note2 : Cieuit cuerent of the first stage transistor NNote3 : Circuit current of the first stage transistor © Junction temperature of the fist stage transistor Th = (Woe x Ins — Por + Pi) x Reino + Tel (128 0.45 -25+02) x 10+Te 33 + Te(O) Noted : Package temperature of device © Junction temperature of the final stage transistor Tie = (Yoox Ire ~ Po + Pos) x Rexi-o2 + Te © (125 x 1.75 ~ 13 +26) «3+ Te $+ 1 2. Heat eink design In thermal desian of heat sink, try to keeo the package temperature at the uoper limit of the operating ambinet temperature (normally Ta = 60°C) and at the outout cower of 13W below 90°C, ‘The thermal resistance Reve-n'® of the heat sink to realize this aes TenTe 90-60 “° = BoiqTy= Pasha C13/0.48)~ 13+ 02 =28ce/m) NNoteS : inclusive of the contact thermal resistance between device and heat sink Mounting the heat sink of the above thermal resistance on the device, Ti = 113%, Tie 13490 ot Te= 60%, Te 90, In the annual average of ambient temperature is 30°C, Tn = 103°, T= 104% ‘As the maximum junction temperature of these incorporsted transistors Trae are 175°C, soplication under fuly dersted condition is ensured. nov oF